PECVD1 Wafer Coating Process: Difference between revisions

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There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
The wafers used for process calibration are ordered from SVM. These are low particle count 4" Si wafers (particle count<100). The wafers are scanned before and after deposition. They are not re-used. Handling the wafers is important and each step could contribute in adding new particles.


=== Standard Si3N4 (Silicon-Nitride) Deposition ===
== SiN @250C ==
⚫
# Log in to PECVD #1 (Staff account).
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
⚫
#* Seasoning recipe name
⚫
#* Deposition recipe name
⚫
#* Cleaning recipe name:
⚫
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
⚫
# Pump down.
# Load the deposition recipe, and run it.
# Wait for deposition to be finished. Unload the wafer.
⚫
# Wipe sidewall first with DI water, followed by IPA.
⚫
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.


== SiO2 @250C ==
==== SiN Deposition ====
# Log in to PECVD #1 (Staff account).
# Log in to PECVD #1
⚫
# Seasoning
# Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes.
⚫
#* Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
#* Seasoning recipe name
#* Deposition recipe name
# Deposition
⚫
#* Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
⚫
#* Cleaning recipe name:
⚫
#* Pump down.
⚫
# Load the seasoning recipe, and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
#* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data].
⚫
# Vent the chamber and load a 4"Si wafer (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
#* Unload the wafer.
⚫
# Pump down.
⚫
# Cleaning
# Load the deposition recipe, and run it.
#* Wipe sidewall first with DI water, followed by IPA.
# Wait for deposition to be finished. Unload the wafer.
#* Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
⚫
# Wipe sidewall first with DI water, followed by IPA.
#* Log out
⚫
# Load recipe for cleaning. Edit the recipe and enter required time for cleaning.

=== Standard Oxide, SiO2 (Silicon Dioxide) Deposition ===

==== SiO2 Deposition ====
⚫
#Log in to PECVD #1
⚫
# Seasoning
⚫
#* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
⚫
# Deposition
⚫
#* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
⚫
#* Pump down.
#* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]].
#* Unload the wafer.
⚫
# Cleaning
⚫
#* Wipe sidewall first with DI water, followed by IPA.
⚫
#* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
#* Log out

Latest revision as of 20:16, 10 December 2020

There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

Standard Si3N4 (Silicon-Nitride) Deposition

SiN Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
    • Log out

Standard Oxide, SiO2 (Silicon Dioxide) Deposition

SiO2 Deposition

  1. Log in to PECVD #1
  2. Seasoning
    • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
  3. Deposition
    • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
    • Pump down.
    • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
    • Unload the wafer.
  4. Cleaning
    • Wipe sidewall first with DI water, followed by IPA.
    • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
    • Log out
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