PECVD1 Wafer Coating Process

There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).

Standard Si3N4 (Silicon-Nitride) Deposition

SiN Deposition

1. Log in to PECVD #1
2. Seasoning
   • Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
3. Deposition
   • Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
   • Pump down.
   • Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
   • Unload the wafer.
4. Cleaning
   • Wipe sidewall first with DI water, followed by IPA.
   • Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
   • Log out

Standard Oxide, SiO2 (Silicon Dioxide) Deposition

SiO2 Deposition

1. Log in to PECVD #1
2. Seasoning
   • Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
3. Deposition
   • Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
   • Pump down.
   • Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
   • Unload the wafer.
4. Cleaning
   • Wipe sidewall first with DI water, followed by IPA.
   • Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
   • Log out