Sputtering Recipes

Back to Vacuum Deposition Recipes. R1

Sputter 3 (AJA ATC 2000-F)

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Materials Table (Sputter 3)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Target Consumed Lower Limit	Data Below	Comment
Au	-	-	-	-	-	-	-	-	-	-	-	-	-	Set: 200 W Read: 400 VDC	no
Al2O3	3	200 (RF2)	off	20	30		1.5	1.52"-4mm	5.32			1.6478	0		no	Demis D. John
Co	10(5)	200	0	20	25	0	0	25-9	2.3	-	-	-	-		yes	Alex K
Cr	5	200	0	20	25	0	0	44-4	6.84	-	-	-	-		no	Brian
Cu	1.5	50(395v)	0	20	25	0	0	25-9	4.15	-	-	-	-		no	Ning
Cu	5	150(~490v)	0	20	15	0	0	0.82"-9	8	-	-	-	-		yes	Ning
Fe	10(5)	200	0	20	25	0	0	25-9	1.25	-	-	-	-		No	Alex K
Mo	3	200	0	20	25	0	0	44-4	13.15	-	-	-	-		yes	Ning
Ni	5	150	0	20	25	0	0	44-4	5.23	-	-	-	-		yes	Ning
Ni	5	150	0	20	25	0	0	25-9	1.82	-	-	-	-		yes	Ning
Ni	5	75	0	20	25	0	0	44-4	2.50	-	-	-	-		yes	Ning
Ni	3	200	0	20	25	0	0	44-4	9.4	-	-	-	-		yes	Ning
Ni	1.5	50(399v)	0	20	25	0	0	25-9	0.96	-	-	-	-		no	Ning
Pt	3	50	0	20	25	0	0	0.82"-9	2.9	-	-	-	-		no	Ning
Si	8	250	0	25	25	0	0	15-3	1.4	-	-	-	-		no	Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiN	3	200	10	20	25	3	0	25-9	1.56	-	-	1.992	-		yes	Brian
SiN	3	250	10	20	25	2.5	0	25-9	2.1	-	-	2.06	-		yes	Brian
SiO2	3	200	10	20	25	0	3	25-9	3.68	-	-	1.447	-		yes	Brian
SiO2	3	200	10	20	25	0	5	45-3	2.60	-	-	1.471	-		yes	Brian
SiO2	3	250	10	20	25	0	2.5	25-9	4.3	-	-	1.485	-		yes	Brian
Ta	5	150	0	20	25	0	0	44-4	9.47	-	-	-	-		yes	Ning
Ta	5	75	0	20	25	0	0	44-4	5.03	-	-	-	-		yes	Ning
Ti	3	100	0	20	25	0	0	25-9	1.34	-	-	-	-		yes	Ning
SampleClean-NativeSiO2	10	0	18	20	25	0	0	44-4	-	-	-	-	-		yes	150Volts 5 min

Height Conversion for Older Recipes

Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:

Old (mm)	New (inches)	Typical Gun Tilt (mm)
15
25	0.82	9
44	1.52	4

Interpolation plot can be found here.

Fe and Co Deposition (Sputter 3)

• Fe and Co Deposition Recipe

Cu Deposition (Sputter 3)

• Cu Deposition Recipe

Mo Deposition (Sputter 3)

• Mo Deposition Recipe

Ni and Ta Deposition (Sputter 3)

• Ni and Ta Deposition Recipe
• Ni Sputtering Film Recipe-3mT-200W

SiO2 Deposition (Sputter 3)

• SiO2 Uniformity Data
• SiO2 Flow and Bias Variations Including AFM Data

SiN Deposition (Sputter 3)

• SiN Flow and RF Variations Including AFM Data

Ti Deposition (Sputter 3)

• Ti Sputtering Film Recipe-3mT-100W

Sputter 4 (AJA ATC 2200-V)

Please see the SignupMonkey page for a list of currently installed targets.

Materials Table (Sputter 4)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Power Source	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
Al	5		200	0	20	45	0	0	H2.75-T5	4.4	-	-	-	-	Yes	Ning Cao
Al2O3	3	RF4-Sw1	200	0	20	30	0	1.5	H2.75-T5	5.1			1.64202	0	partial	Demis D. John
Au	5		200	0	20	45	0	0	H1-T10	17.7	-	-	-	-	Yes	Ning Cao
Au	10		300	0	20	45	0	0	H2.75-T5	45.4	-	-	-	-	Yes	Ning Cao
Cu	5		150	0	20	30	0	0	H0.82-T9	6.7					No (SEM available)	Ning Cao
Nb	4		250	0	20	30	0	0	H2.00-T7	7.5	-	-	-	-	No
Pt	5		200	0	20	45	0	0	H2.75-T5	7.4	-	-	-	-	Yes	Ning Cao
Pt	3		50(439V)	0	20	45	0	0	H2.75-T5	3.9	-	-	-	-	Yes	Ning Cao
Ru	3		200			45			H2.75-T4	~10					Yes	Ning Cao
Ti	10		200	0	20	45	0	0	H2.75-T5	2.3	-	-	-	-	Yes	Ning Cao
TiN	3		150	110V	20	48.25	1.75	0	H2.5-T5	2	-	60	-	-	No
TiO2	3		250(RF:450V)	0	20	45	0	3	H2.75-T5	4.3	-		-	-	Yes	Ning Cao
TiW	4.5		200	0	20	45	0	0	H1-T10	4.7	-	-	-	-	Yes	Ning Cao
TiW	4.5		300	0	75	45	0	0	H2.75-T5	9.5	-150 to 150	60	-	-	Yes	10%Ti by Wt
W	3		300	0	50	45	0	0	H2.75-T5	11.5	-150 to 150	11	-	-	Yes	Jeremy Watcher

Au Deposition (Sputter 4)

• Au Film's AFM Step and Roughness

Al Deposition (Sputter 4)

• Al Film SEM Profile

Al2O3 Deposition (Sputter 4)

• Rate: 5.134 nm/min
• Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
  • A = 1.626
  • B = 5.980E-3
  • C = 1.622E-4

Pt Deposition (Sputter 4)

• Pt Film's AFM Step and Roughness

Ru Deposition (Sputter 4)

• Ruthenium Hardmask for SiO2 Etching - Full Process Traveler by Ning Cao
  • Deposition Rate ~10nm/min
  • See Fluorine-ICP > SiO2 Etching page for more info.

Ti-Au Deposition (Sputter 4)

• Ti-Au Deposition Recipe and SEM Cross-Sections

TiO₂ Deposition (Sputter 4)

• TiO₂ Film's Refractive Index Spectrum, Resistivity, AFM Roughness

TiW Deposition (Sputter 4)

• TiW Film's AFM Step and Roughness

W-TiW Deposition (Sputter 4)

• W-TiW Deposition Recipe

Sputter 5 (AJA ATC 2200-V)

Please see the SignupMonkey page for a list of currently installed targets.

Materials Table (Sputter 5)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Power Source	Pow(W)	Sub(V)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	Rq(nm)	n@633nm	k@633nm	LPDb/LPDa*	Data Below	Comment
Al	5		250	0	20	45	0	0	H1-T10	2.5	22						No (SEM available)	Ning
Al2O3	1.5	DC5-SW1	150	-	-	45	-	5	H2.75-T5	5.3	?	?	?	1.641	-	?	No	Demis 2018-04-13
SiO2	3		250	120	20	45	0	2	H1.0-T10	2.32		-	-	1.49	-	153/6384	No	Biljana
SiO2	3		250	120	20	45	0	4.5	H1.0-T10	2.29	-515	-	0.210	1.49		138/4445	No ( AFM available)	Biljana
SiO2	3		250	120	20	45	0	6	H1.0-T10	2.32		-	-	1.49	-	27/1515	Yes	Biljana

*LPD: light particle detection:

• LPDb: light particle detection before deposition
• LPDa: light particle detection after deposition

SiO2 Deposition (Sputter 5)

• SiO2 film

Ion Beam Deposition (Veeco NEXUS)

• IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
  • All users are required to enter their calibration deps (simple test deps only)
• Particulates in SiO2 and Ta2O5 in 2015

SiO₂ deposition (IBD)

SiO₂ Historical Data

• SiO₂ Standard Recipe
• SiO₂ Data December 2014
• SiO₂ Thickness uniformity 2014
• SiO₂ Data-15min depositions 2015
• SiO₂ Thickness uniformity-15 min depositions 2015
• SiO₂ Data-1hr depositions 2015
• SiO₂ Thickness uniformity-1hr depositions 2015
• SiO₂ Data-1hr depositions 2016
• SiO₂ Thickness uniformity-1hr depositions 2016

SiO₂ 1hr deposition properties:

• Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~350 nm/min
• Stress ≈ -390MPa (compressive)
• Refractive Index: ≈ 1.494
• [Cauchy Parameters] (350-2000nm):
  • A = 1.480
  • B = 0.00498
  • C = -3.2606e-5

Si₃N₄ deposition (IBD)

• Si₃N₄ Standard Recipe
• Si₃N₄ Data December 2014
• Si₃N₄ Thickness uniformity 2014

• Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~11nm/min
• Stress ≈ -1590MPa (compressive)
• Refractive Index: ≈ 1.969
• [Cauchy Parameters] (350-2000nm):
  • A = 2.000
  • B = 0.01974
  • C = 1.2478e-4

SiO_xN_y deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

IBD SiOxNy: Refractive Index vs. O2/N2 Flow.	Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta₂O₅ deposition (IBD)

Ta2O5 Historical Data (IBD)

• Ta₂O₅ Standard Recipe
• Ta₂O₅ Data December 2014
• Ta₂O₅ Thickness uniformity 2014

• Ta₂O₅ Data December-15 min depositions 2015
• Ta₂O₅ Thickness uniformity-15 min depositions 2015
• Ta₂O₅ Data December-1hr depositions 2015
• Ta₂O₅ Thickness uniformity-1hr depositions 2015
• Ta₂O₅ Data December-1hr depositions 2016
• Ta₂O₅ Thickness uniformity-1hr depositions 2016

Ta2O5 Deposition/Film Properies (IBD)

• Ta2O5 1hr depositions:
• Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~2 nm/min
• Stress ≈ -232MPa (compressive)
• Refractive Index: ≈ 2.172
• [Cauchy Parameters] (350-2000nm):
  • A = 2.1123
  • B = 0.018901
  • C = -0.016222

TiO₂ deposition (IBD)

• TiO₂ Standard Recipe
• TiO₂ Data December 2014
• TiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~5.34nm/min
• Stress ≈ -445MPa (compressive)
• Refractive Index: ≈ 2.259
• [Cauchy Parameters] (350-2000nm):
  • A = 2.435
  • B = -4.9045e-4
  • C = 0.01309
• Absorbing < ~350nm

Al₂O₃ deposition (IBD)

• Al2O3 standard recipe: 1_Al2O3_dep

• Al2O3 Data 2018
• Al2O3 Thickness uniformity 2018

• Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~167nm/min
• Stress ≈ -332MPa (compressive)
• Refractive Index: ≈ 1.656
• [Cauchy Parameters] (350-2000nm):( working on)
  • A =
  • B =
  • C =
• Absorbing < ~350nm

Reference Recipes (Disabled Tools)

Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe