OLD - PECVD2 Recipes: Difference between revisions
Jump to navigation
Jump to search
m (John d moved page PECVD2 Recipes to OLD - PECVD2 Recipes without leaving a redirect: this page is not linked anywhere, looks like 2014 data only) |
|||
(37 intermediate revisions by one other user not shown) | |||
Line 1: | Line 1: | ||
=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
||
⚫ | |||
⚫ | |||
⚫ | |||
⚫ | |||
==Photos== |
|||
*Deposition Rate: ≈ 8.29 nm/min (users must calibrate this prior to critical deps) |
|||
*Refractive Index: ≈ 1.955 |
|||
*[[media: Photos Sheet1.pdf|Dirty platen]] |
|||
*Stress ≈ 498MPa |
|||
*HF etch rate:~48nm/min |
|||
== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
||
*[[media: |
*[[media:NewAdvPECVD OXIDE 300C standard recipe.pdf|Oxide Standard Recipe]] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
||
⚫ | |||
*Deposition Rate: ≈ 28.36 nm/min (users must calibrate this prior to critical deps) |
|||
⚫ | |||
*Refractive Index: ≈ 1.473 |
|||
⚫ | |||
*Stress ≈ -256MPa |
|||
⚫ | |||
*HF etch rate~582nm/min |
|||
==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
||
⚫ | |||
⚫ | |||
⚫ | |||
⚫ | |||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
||
*Deposition Rate: ≈ 8.17 nm/min (users must calibrate this prior to critical deps) |
|||
*Refractive Index: ≈ 1.935 |
|||
*Stress ≈ -0.04MPa |
|||
*HF etch rate~47nm/min |
|||
== Amorphous-Si deposition (PECVD #2) == |
== Amorphous-Si deposition (PECVD #2) == |