Atomic Layer Deposition (Oxford FlexAL): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=FlexAL.jpg
|picture=FlexAL.jpg
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Brian Lingg
|super= Bill Millerski
|super2= Lee Sawyer
|phone=(805)839-3918x210
|phone=(805)839-2655
|location=Bay 2
|location=Bay 2
|email=lingg@ece.ucsb.edu
|email=wmillerski@ucsb.edu
|description = Oxford FlexAL Atomic Layer Deposition
|description = Oxford FlexAL Atomic Layer Deposition
|manufacturer = [http://www.oxford-instruments.com/businesses/plasma-technology/Pages/plasma-technology.aspx Oxford Instruments Plasma Technologies]
|manufacturer = [http://www.oxford-instruments.com/businesses/plasma-technology/Pages/plasma-technology.aspx Oxford Instruments Plasma Technologies]
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The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films.
The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films.


The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.
The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides as well as Ruthenium and Platinum. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.


The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface. In-situ ellipsometry between growth cycles and mass spectrometry during growth are both available.
The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface.


===Cluster Configuration===
===Cluster Configuration===
We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers.
We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers.


One ALD chamber is dedicated to metals and the other dedicated to dielectrics. The other chamber on the cluster is the [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill]].
ALD chamber sources are configured with different precursors based on demand. The other chamber on the cluster is the [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill]].


*Chamber #1: ALD Dielectrics Films only
*Chamber #1: ALD: Al2O3, SiO2, Ru, Pt, Al:ZnO
*Chamber #2: [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill (CAIBE)]]
*Chamber #2: [[CAIBE (Oxford Ion Mill)|Oxford Ion Mill (CAIBE)]]
*Chamber #3: ALD Metal Films only
*Chamber #3: Al2O3, SiO2, HfO2, ZrO2, TiN


=Procedures & Documentation=
=Procedures & Documentation=


*[//www.nanotech.ucsb.edu/wiki/images/5/52/Cluster_operating_instructions.pdf Operating Instructions]
*[https://wiki.nanotech.ucsb.edu/w/images/4/40/Oxford_Cluster_Tool_Operating_Instructions_Rev_B.pdf Operating Instructions]
**Includes recipe names for various films, and approx. dep. rates
**Includes recipe names for various films, and approx. dep. rates
*Film Thicknesses are restricted to '''30nm or less'''.
*Film Thicknesses are restricted to '''30nm or less'''.
**'''Thicker films are allowed with prior staff approval''' - please ask [[Bill Mitchell]] if you want to deposit a thicker film!
**'''Thicker films are allowed with prior staff approval''' - please ask [[Brian Lingg|Tool Supervisor]] if you want to deposit a thicker film!


==ALD Recipes==
==ALD Recipes==


*See the [[Atomic_Layer_Deposition_Recipes|Atomic Layer Deposition: Recipes]] page for recipes and thin-film data/measurements.
*The [[Atomic_Layer_Deposition_Recipes|'''Atomic Layer Deposition: Recipes''']] page shows all available recipes and data/measurements.
*Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. [[Bill Mitchell]] is the resident expert on ALD recipe development.
*Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. [[Bill Mitchell]] is the resident expert on ALD recipe development.


==Etch Rates of ALD Films==
==Etch Rates of ALD Films==


*[//www.nanotech.ucsb.edu/wiki/images/1/14/Wet_Etching_of_ALD_Al2O3_Plasma_300C.xls Al2O3 Plasma 300C Wet Etch Rates]
*[//wiki.nanotech.ucsb.edu/wiki/images/1/14/Wet_Etching_of_ALD_Al2O3_Plasma_300C.xls Al2O3 Plasma 300C Wet Etch Rates]

Latest revision as of 21:56, 8 March 2023

Atomic Layer Deposition (Oxford FlexAL)
FlexAL.jpg
Location Bay 2
Tool Type Vacuum Deposition
Manufacturer Oxford Instruments Plasma Technologies
Description Oxford FlexAL Atomic Layer Deposition
Primary Supervisor Bill Millerski
(805) 893-2655
wmillerski@ucsb.edu

Secondary Supervisor

Lee Sawyer

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


About

The Oxford Instruments FlexAL Atomic Layer Deposition system at UCSB is a plasma-enhanced ALD system for the precise growth of ultra-thin oxides and nitrides. Self-limiting layer by layer growth ensures precise control, film conformality, and repeatability of the films.

The system currently has metallorganic precursors for Aluminum, Hafnium, Titanium, Platinum, Zirconium, and Silicon oxides and nitrides as well as Ruthenium and Platinum. Water and Ozone are available for thermal oxides and Oxygen, Ammonia, Nitrogen, and Hydrogen are available for plasma assisted oxides and nitrides. Remote ICP plasma powers up to 600W are possible.

The system is load-locked and can accommodate sample temperatures up to 550°C. Processing temperature windows are defined for each material based on growth limitations. The system is step-by-step programmable through a flexible GUI interface.

Cluster Configuration

We have three separate chambers on the Oxford Cluster tool, two of which are ALD chambers.

ALD chamber sources are configured with different precursors based on demand. The other chamber on the cluster is the Oxford Ion Mill.

  • Chamber #1: ALD: Al2O3, SiO2, Ru, Pt, Al:ZnO
  • Chamber #2: Oxford Ion Mill (CAIBE)
  • Chamber #3: Al2O3, SiO2, HfO2, ZrO2, TiN

Procedures & Documentation

  • Operating Instructions
    • Includes recipe names for various films, and approx. dep. rates
  • Film Thicknesses are restricted to 30nm or less.
    • Thicker films are allowed with prior staff approval - please ask Tool Supervisor if you want to deposit a thicker film!

ALD Recipes

  • The Atomic Layer Deposition: Recipes page shows all available recipes and data/measurements.
  • Only staff-provided recipes are allowed to be run on this tool, as achieving the atomic-layer regime is rather complex. Bill Mitchell is the resident expert on ALD recipe development.

Etch Rates of ALD Films

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