Oxygen Plasma System Recipes: Difference between revisions
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Recipe Temeprature control is by the lift-pins , with hotplate at 200°C |
Recipe Temeprature control is by the lift-pins , with hotplate at 200°C |
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===N2/O2 Recipes=== |
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*[[YES-150C-Various-Resists|Various Resists at 150C-3kW]] |
*[[YES-150C-Various-Resists|Various Resists at 150C-3kW]] |
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3kW recipes appear to gradually heat wafers beyond the hotplate temperature, and also expose the underside of the wafer. Very efficient cleaning of positive photoresists. |
3kW recipes appear to gradually heat wafers beyond the hotplate temperature, and also expose the underside of the wafer. Very efficient cleaning of positive photoresists. |
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===O2-Only Recipes=== |
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Low melting-point metals (Au) should only use O2-Only recipes. |
Low melting-point metals (Au) should only use O2-Only recipes. |
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'''Internal To Add:''' |
'''Internal To Add:''' |
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• Guaranteed not to damage gold |
• Guaranteed not to damage gold |
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• PR Etch rates for each recipe |
• PR Etch rates for each recipe |
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* [[YES EcoClean - O2-Only etch rates|O2-Only etch rates]] |
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==[[UV Ozone Reactor]]== |
==[[UV Ozone Reactor]]== |
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Revision as of 18:30, 1 June 2023
Back to Dry Etching Recipes.
Ashers (Technics PEII)
CF4/O2 PEii
Gas is CF4 / O2 (88%/12%)
SiN Etching
- Pressure = 300mT–350mT
- Power = 100W
- Etch Rate ≈ 50-100 nm/min. Varies.
Chamber Clean after CF4 Etching
- Pressure = 300mT–350mT
- Power = 100W
- Time = 10min
O2 Ashing
O2; 300mT / 100W - on either Technics asher.
~15sec to make a surface hydrophilic, eg. before wet etching or applying photoreist.
~30-120sec to improve wirebonding pad metal prior to deposition of liftoff metal.
~1-5min to remove polymerized photoresist/scum after dry etching
~5-10min to strip ~0.5-1.0µm photoresist. Rotate wafer 180° halfway through etch. Optionally increase to 200W for faster etching.
Use glass slides to prevent wafers from sliding on platen.
Plasma Clean (Gasonics 2000)
Recipes are posted at the tool, with photoresist etch rates.
Plasma Clean (YES EcoClean)
Some negative photoresists (eg. UVN) do not strip well without ion bombardment (requiring Technics PEii or RIE/ICP instead).
Recipe Temeprature control is by the lift-pins , with hotplate at 200°C
N2/O2 Recipes
3kW recipes appear to gradually heat wafers beyond the hotplate temperature, and also expose the underside of the wafer. Very efficient cleaning of positive photoresists.
O2-Only Recipes
Low melting-point metals (Au) should only use O2-Only recipes.
Internal To Add: • Oxygen only-recipe names, and variations (eg. different times) • Guaranteed not to damage gold • PR Etch rates for each recipe
UV Ozone Reactor
The UV Ozone Reactor is used for two purposes:
- Etch away organic residue with no ion bombardment
- Oxidize surface (monolayers) of a substrate, which has been used for
- Providing a wet-etchable sacrifical surface layer which is removed prior to deposition or regrowth
- Controlled digital etching, by wet etching the oxide and then repeating the oxidation/etch cycle.
Plasma Activation (EVG 810)
O2 and N2 plasma activation recipes are available on this tool.
These are the qualified recipes provided by EVG and will not require adjustment of the RF Match:
