Difference between revisions of "E-Beam 1 (Sharon)"

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{{tool|{{PAGENAME}}
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{{tool2|{{PAGENAME}}
 
|picture=e-beam1.jpg
  
|picture=e-beam1.jpg
 
|type = Vacuum Deposition
  
|type = Vacuum Deposition
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|super= Don Freeborn
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|super= Michael Barreraz
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|super2= Bill Millerski
 
|phone=(805)839-7975
  
|phone=(805)839-7975
 
|location=Bay 3
  
|location=Bay 3
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|email=dfreeborn@ece.ucsb.edu
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|email=mikebarreraz@ece.ucsb.edu
 
|description = Four Pocket Electron Beam Evaporator
  
|description = Four Pocket Electron Beam Evaporator
 
|manufacturer = Sharon Vacuum Co., Inc.
  
|manufacturer = Sharon Vacuum Co., Inc.
 
|toolid=7
  
|toolid=7
 
}}
  
}}
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[[File:EBEAM1 Controls Sept2022.jpeg|thumb|EBeam#1]]
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= About =
  
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  ⚫
=About=
 
 
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The Sharon is a cryo-pumped thin film evaporator with a Temescal four hearth 270° bent electron beam evaporation source. The system incorporates a Commonwealth Scientific Corp. ion source for in-situ sample cleaning. Fixturing in the Sharon will accept any size sample up to 3.5-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° variable speed rotation of any size sample, up to 1.5-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
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The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.
   
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EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.
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A new fixture allowing up to four - 4" diameter wafers is now installed.
 
   
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=Detailed Specifications=
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The Sharon is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metalization for fabrication of III-V compound semiconductor and silicon device fabrication.
 
   
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*Cryopump: CTI Cryotorr 8F with air-cooled compressor
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= Materials Table =
  
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*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
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For the materials tables and deposition parameters for various materials, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|E-Beam Recipe Page]].
  
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*Mechanical Pump: Ebara EV-A10, 35 CFM
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*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
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= Detailed Specifications =
  
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*Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
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*Cryopump: CTI Cryotorr 8F with air-cooled compressor
 
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*Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
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*Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
 
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*Mechanical Pump: Varian, Model SD700, 35 CFM
 
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*Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
 
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*Electron Beam Power Supply: Temescal, Model CV8A-111, -5 to -10 kV dc, 0.8A dc max. beam current; XYS-8 Sweep Control
 
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*Deposition Control: Inficon IC 6000, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
 
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*Ion Source: Commonwealth Scientific Corp., MOD. 2. Kaufman-type, 3cm ion source; beam currents to 100mA at 1000eV
  
 
*Pieces up to Four - 4" wafers in one run.
  
*Pieces up to Four - 4" wafers in one run.
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*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
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*For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.
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  ⚫
=Documentation=
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*[https://wiki.nanofab.ucsb.edu/w/images/f/f0/EB-1_operation_instructions_6-6-24.pdf EBeam 1 Operating Procedure]
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**Operating Instructions
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**[https://wiki.nanofab.ucsb.edu/w/images/e/e3/EB1_Rotation_Fixture_SOP_6-4-24.pdf Rotation Fixture SOP]
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=Recipes=
   
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*See the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #1)|'''<u>E-Beam Recipe Page</u>''']], for the materials tables and deposition parameters for various materials.
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=[[Documentation]]=
  
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*[//wiki.nanotech.ucsb.edu/w/images/4/42/New_Operating_Instructions_Ebeam.pdf Operating Instructions]
  

Latest revision as of 15:08, 6 June 2024

E-Beam 1 (Sharon)
E-beam1.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Sharon Vacuum Co., Inc.
Description Four Pocket Electron Beam Evaporator
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Bill Millerski

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


EBeam#1

About

The Sharon is a cryo-pumped thin film evaporator with a Telemark 8 pocket electron beam evaporation source. Fixturing in EBeam1 will accept any size sample up to 4-inch diameter. In addition, a rotation fixture is easily installed which permits adjustable angle, 360° rotation of any size sample, up to 4-inch diameter. This feature is particularly useful for promoting step coverage of irregular surfaces.

EBeam1 is used for the evaporation of high purity metals, e.a. Al, Au, Ni, Ge, AuGe, Ti, Pt etc., for interconnect and ohmic contact metallization for fabrication of III-V compound semiconductor and silicon device fabrication.

Detailed Specifications

  • Cryopump: CTI Cryotorr 8F with air-cooled compressor
  • Pumping speed: 4,000 l/sec. for H2O, 1,500 l/sec. for air, 2,200 l/sec. for H2, 200 l/sec. for Ar
  • Mechanical Pump: Ebara EV-A10, 35 CFM
  • Electron Beam Source: Temescal, Model STIH-270-2MB, four 15 cc hearths
  • Electron Beam Power Supply: Temescal, Model CV-6SLX, 0 - 10 kV dc, 0–600 mA dc beam current; TemEBeam Sweep Control
  • Deposition Control: : Inficon IC/5, 6 film programs; 37 parameters for automatic or manual deposition control based on a resonating quartz crystal sensor
  • Pieces up to Four - 4" wafers in one run.
  • For single wafers: tilt with motorized rotation and sample lowering for higher effective rates, sidewall coverage, angled evaporation.

Documentation

Recipes

  • See the E-Beam Recipe Page, for the materials tables and deposition parameters for various materials.
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