E-Beam 3 (Temescal): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=e-beam3.jpg
|picture=e-beam3.jpg
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Don Freeborn
|super= Michael Barreraz
|super2= Aidan Hopkins
|phone=(805)839-3918x216
|phone=(805)839-3918x216
|location=Bay 3
|location=Bay 3
Line 10: Line 11:
|materials =
|materials =
|toolid=9
|toolid=9
}}
}}
[[File:EBeam3 Controls.jpeg|thumb|EBeam#3 controls]]
= About =


=About=
This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling and/or rotating the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.


This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.
= Detailed Specifications =


=Detailed Specifications=
*Temescal CV-6S 10kV power supply

*2-Temescal 4-pocket series 260 e-beam sources
*Temescal CV-6S 10kV power supply
*Turbo-pumped system with ~ 5e-8 ultimate base pressure
*2-Temescal 4-pocket series 260 e-beam sources
*Load-lock for quick turn-around
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Automatic vacuum sequencing
*Load-lock for quick turn-around
*Temescal Super Sweep e-beam sweep control
*Automatic vacuum sequencing
*Inficon IC/5 programmable crystal thickness monitoring system

*Sample size: 1 wafer up to 4” diameter

*Temescal Super Sweep e-beam sweep control
*Inficon IC/5 programmable crystal thickness monitoring system
*Sample size: 1 wafer up to 4” diameter
*Metals:
*Metals:
**Front Gun: Ti, Pt, Ni, Au
**Front Gun: Ti, Pt, Ni, Au
**Rear Gun: Pd, Al, Ag, Ge
**Rear Gun: Pd, Al, Ag, Ge
=Documentation=

*{{Blank}}


[https://wiki.nanofab.ucsb.edu/w/images/b/b6/EB-3_operation_instructions_7-8-24.pdf EB-3_operation_instructions_5-22-24.pdf]
= Materials Table =


=Materials Table=
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"
For the materials tables, please visit the [[E-Beam_Evaporation_Recipes#Materials_Table_(E-Beam #3)|E-Beam Recipe Page]].
|-
! colspan=9 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>
|- bgcolor="#D0E7FF"
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Gun'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Hearth /Crucible'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Process Gain'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Film Number'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Density'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|[[Ag]]
| Rear
| C
| 10.0A/sec/%pwr
| 2
|10.50
| 0.529
| 67
|
|-
| Al
| Rear
| C
| 10.0A/sec/%pwr
| 1
|2.0
| 1.080
| 53
|
|-
| Au
| Front
| C
| 2.0A/sec/%pwr
| 3
|19.3
| 0.381
| 56
|
|-
| Ge
| Rear
| C
| 10.0A/sec/%pwr
| 3
|5.350
| 0.516
| 80
|
|-
| Ni
| Front
| C
| 0.5A/sec/%pwr
| 2
|8.910
| 0.331
| 67
|
|-
| Pd
| Rear
| C
| 0.9A/sec/%pwr
| 4
|12.038
| 0.357
| 48
|
|-
| Pt
| Front
| C
| 0.4A/sec/%pwr
| 1
|21.40
| 0.245
| 67
|
|-
| Ti
| Front
| C
| 5.0A/sec/%pwr
| 4
|4.5
| 0.628
| 67
|
|-
| Si
|
|
| 10.0A/sec/%pwr
|
|2.32
| 0.712
| 100
|
|-

Revision as of 18:56, 8 July 2024

E-Beam 3 (Temescal)
E-beam3.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Temescal
Description Load Locked Metal Evaporator Dual Gun
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Aidan Hopkins

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


EBeam#3 controls

About

This electron-beam evaporation system is the work-horse of the lab for metal deposition. The system has the unique feature of a home-built load-lock system that allows very quick cycle time for evaporation (as low as 20 minutes total time). The system also has two 4-pocket e-beam sources and an Inficon IC/5 deposition controller that allows for co-deposition of certain metals. The front gun contains metals Ti, Pt, Ni, Au and the back gun contains metals Pd, Al, Ag, Ge. These metals stay under high vacuum at all times, except during maintenance, to maintain source purity. One wafer up to 4” diameter or multiple pieces can be placed into this system for evaporation. There is also a special fixture that can be inserted for angling the sample during deposition. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

Detailed Specifications

  • Temescal CV-6S 10kV power supply
  • 2-Temescal 4-pocket series 260 e-beam sources
  • Cryo-pumped system with ~ 5e-7 ultimate base pressure
  • Load-lock for quick turn-around
  • Automatic vacuum sequencing


  • Temescal Super Sweep e-beam sweep control
  • Inficon IC/5 programmable crystal thickness monitoring system
  • Sample size: 1 wafer up to 4” diameter
  • Metals:
    • Front Gun: Ti, Pt, Ni, Au
    • Rear Gun: Pd, Al, Ag, Ge

Documentation

EB-3_operation_instructions_5-22-24.pdf

Materials Table

For the materials tables, please visit the E-Beam Recipe Page.

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