Difference between revisions of "Sputtering Recipes"
m (moved sputter 2 to the bottom) |
(→SiO2 Uniformity: added table of stats) |
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{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}} |
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}} |
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− | =[[Sputter 3 (AJA ATC 2000-F)]]= |
+ | ==[[Sputter 3 (AJA ATC 2000-F)]]== |
− | + | Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets. |
|
+ | ===Tips & Tricks=== |
||
+ | |||
+ | ====Ignition Issues==== |
||
+ | It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit. |
||
+ | |||
+ | ===Materials Table (Sputter 3)=== |
||
+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
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|- |
|- |
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− | ! |
+ | !Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm |
+ | !Target Consumed Lower Limit!!Data Below!!Comment |
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+ | |- |
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+ | |Au |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | | - |
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+ | |Set: 200 W |
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+ | Read: 400 VDC |
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+ | |no |
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+ | | |
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|- |
|- |
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|Al2O3 |
|Al2O3 |
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Line 24: | Line 51: | ||
|1.6478 |
|1.6478 |
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|0 |
|0 |
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+ | | |
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|no |
|no |
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|Demis D. John |
|Demis D. John |
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|- |
|- |
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− | | |
+ | |Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||- |
+ | | ||yes||Alex K |
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|- |
|- |
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− | | |
+ | |Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||- |
+ | | ||no||Brian |
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|- |
|- |
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− | | |
+ | |Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||- |
+ | | ||no||Ning |
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|- |
|- |
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− | | |
+ | |Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||- |
+ | | ||No||Alex K |
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|- |
|- |
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− | | |
+ | |Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||- |
+ | | ||no||Ning |
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|- |
|- |
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− | | |
+ | |Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||- |
+ | | ||no||Ning |
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|- |
|- |
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− | | |
+ | |Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||- |
+ | | ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer |
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|- |
|- |
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− | | |
+ | |SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||- |
+ | | ||yes||Brian |
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|- |
|- |
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− | | |
+ | |SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||- |
+ | | ||yes||Brian |
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|- |
|- |
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− | | |
+ | |SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||- |
+ | | ||yes||Brian |
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|- |
|- |
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− | | |
+ | |SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||- |
+ | | ||yes||Brian |
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|- |
|- |
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− | | |
+ | |SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||- |
+ | | ||yes||Brian |
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|- |
|- |
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− | | |
+ | |Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||- |
+ | | ||yes||Ning |
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|- |
|- |
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− | | |
+ | |SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||- |
+ | | ||yes||150Volts 5 min |
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|- |
|- |
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|} |
|} |
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− | == |
+ | ===Height Conversion for Older Recipes=== |
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows: |
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows: |
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{| class="wikitable" |
{| class="wikitable" |
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Line 94: | Line 144: | ||
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]] |
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]] |
||
− | == |
+ | ===Fe and Co Deposition (Sputter 3)=== |
− | *[[media:Fe and Co Films using Sputter-3.pdf|Fe and Co Deposition Recipe]] |
||
− | == Cu Deposition (Sputter 3) == |
||
− | *[[media:Cu Film using Sputter-3.pdf|Cu Deposition Recipe]] |
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+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe] |
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− | == Mo Deposition (Sputter 3) == |
||
− | *[[media:46-Mo Film using Sputter3.pdf|Mo Deposition Recipe]] |
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− | == |
+ | ===Cu Deposition (Sputter 3)=== |
− | *[[media:24-Ni and Ta Films using Sputter-3.pdf|Ni and Ta Deposition Recipe]] |
||
− | *[[media:Ni Sputtering Film using Sputter 3-a.pdf|Ni Sputtering Film Recipe-3mT-200W]] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe] |
||
− | == SiO2 Deposition (Sputter 3) == |
||
− | *[[media:SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf|SiO2 Uniformity Data]] |
||
− | *[[media:SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf|SiO2 Flow and Bias Variations Including AFM Data]] |
||
− | == |
+ | ===Mo Deposition (Sputter 3)=== |
− | *[[media:SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf|SiN Flow and RF Variations Including AFM Data]] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe] |
||
− | == Ti Deposition (Sputter 3) == |
||
− | *[[media:Ti Sputtering Film using Sputter 3.pdf|Ti Sputtering Film Recipe-3mT-100W]] |
||
+ | ===Ni and Ta Deposition (Sputter 3)=== |
||
− | =[[Sputter 4 (AJA ATC 2200-V)]]= |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe] |
||
− | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets. |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W] |
||
+ | ===SiO2 Deposition (Sputter 3)=== |
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+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data] |
||
+ | |||
+ | ===SiN Deposition (Sputter 3)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data] |
||
+ | |||
+ | ===Ti Deposition (Sputter 3)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W] |
||
+ | |||
+ | ==[[Sputter 4 (AJA ATC 2200-V)]]== |
||
+ | |||
+ | Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets. |
||
+ | |||
+ | ===Materials Table (Sputter 4)=== |
||
+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
− | ! |
+ | !Material!!P(mT) |
− | !Power Source!! |
+ | !Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment |
|- |
|- |
||
− | | |
+ | |Al||5 |
− | ||| |
+ | | ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao |
|- |
|- |
||
|Al2O3 |
|Al2O3 |
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Line 146: | Line 206: | ||
|Demis D. John |
|Demis D. John |
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|- |
|- |
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− | | |
+ | |Au||5 |
− | ||| |
+ | | ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao |
|- |
|- |
||
− | | |
+ | |Au||10 |
− | ||| |
+ | | ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03 |
|- |
|- |
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|Cu |
|Cu |
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Line 170: | Line 230: | ||
|Ning Cao |
|Ning Cao |
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|- |
|- |
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− | | |
+ | |Nb||4 |
− | ||| |
+ | | ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No|| |
|- |
|- |
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− | | |
+ | |Pt||5 |
− | ||| |
+ | | ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao |
|- |
|- |
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− | | |
+ | |Pt||3 |
− | ||| |
+ | | ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao |
|- |
|- |
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+ | |Ru |
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− | | Ti || 10 |
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+ | |3 |
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− | ||| 200 || 0 || 20 || 45 || 0 || 0 || H2.75-T5 || 2.3 || - || - || - || - || Yes || Ning Cao |
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+ | | |
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+ | |200 |
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+ | | |
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+ | | |
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+ | |45 |
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+ | | |
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+ | | |
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+ | |H2.75-T4 |
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+ | |~10 |
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+ | | |
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+ | | |
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+ | | |
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+ | | |
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+ | |Yes |
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+ | |Ning Cao |
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|- |
|- |
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− | | |
+ | |Ti||10 |
− | ||| |
+ | | ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao |
|- |
|- |
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+ | |TiN||3 |
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− | | TiO<sub>2</sub> || 3 |
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− | ||| |
+ | | ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No|| |
|- |
|- |
||
+ | |TiO<sub>2</sub>||3 |
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− | | TiW || 4.5 |
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− | ||| |
+ | | ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao |
|- |
|- |
||
− | | |
+ | |TiW||4.5 |
− | ||| |
+ | | ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao |
|- |
|- |
||
− | | |
+ | |TiW||4.5 |
− | ||| |
+ | | ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt |
+ | |- |
||
+ | |W||3 |
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+ | | ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher |
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|- |
|- |
||
|} |
|} |
||
− | == W-TiW Deposition (Sputter 4) == |
||
− | *[[media:W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf|W-TiW Deposition Recipe]] |
||
− | == |
+ | ===Au Deposition (Sputter 4)=== |
− | *[[media:Ti-Au-Sputtering-Films-AJA2-rev1.pdf|Ti-Au Deposition Recipe and SEM Cross-Sections]] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness] |
||
− | == Pt Deposition (Sputter 4) == |
||
− | *[[media:Pt-Sputter4.pdf|Pt Film's AFM Step and Roughness]] |
||
− | == |
+ | ===Al Deposition (Sputter 4)=== |
− | *[[media:TiW-Sputter4-4.5mT-300W-300s.pdf|TiW Film's AFM Step and Roughness]] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile] |
||
− | == TiO<sub>2</sub> Deposition (Sputter 4) == |
||
− | *[[media:TiO2 film using Sputter4.pdf|TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]] |
||
− | == |
+ | ===Al2O3 Deposition (Sputter 4)=== |
− | *[[media:Au-Sputter4-5mT-200W-120s.pdf|Au Film's AFM Step and Roughness]] |
||
+ | *Rate: 5.134 nm/min |
||
− | == Al Deposition (Sputter 4) == |
||
+ | *[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range) |
||
− | *[[media:Al-Sputter4-5mT-200W-30m.pdf|Al Film SEM Profile]] |
||
+ | **A = 1.626 |
||
+ | **B = 5.980E-3 |
||
+ | **C = 1.622E-4 |
||
− | == |
+ | ===Pt Deposition (Sputter 4)=== |
− | * Rate: 5.134 nm/min |
||
− | * [https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range) |
||
− | ** A = 1.626 |
||
− | ** B = 5.980E-3 |
||
− | ** C = 1.622E-4 |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness] |
||
− | =[[Sputter 5 (AJA ATC 2200-V)]]= |
||
+ | ===Ru Deposition (Sputter 4)=== |
||
− | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao |
||
+ | **Deposition Rate ~10nm/min |
||
+ | **See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info. |
||
+ | |||
+ | ===Ti-Au Deposition (Sputter 4)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections] |
||
+ | |||
+ | ===TiO<sub>2</sub> Deposition (Sputter 4)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness] |
||
+ | |||
+ | ===TiW Deposition (Sputter 4)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness] |
||
+ | |||
+ | ===W-TiW Deposition (Sputter 4)=== |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe] |
||
+ | |||
+ | ==[[Sputter 5 (AJA ATC 2200-V)]]== |
||
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
||
+ | |||
+ | ===Materials Table (Sputter 5)=== |
||
+ | The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
− | ! |
+ | !Material!!P(mT) |
− | !Power Source!! |
+ | !Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment |
|- |
|- |
||
|Al |
|Al |
||
Line 277: | Line 371: | ||
|Demis 2018-04-13 |
|Demis 2018-04-13 |
||
|- |
|- |
||
+ | |Pt |
||
− | | SiO2 || 3 |
||
+ | |3.0 |
||
− | ||| 250 || 120 || 20 || 45 || 0 || 2 || H1.0-T10 || 2.32 || || - || - ||1.49 || - || 153/6384 || No || Biljana |
||
+ | | |
||
+ | |200(507v) |
||
+ | | - |
||
+ | | - |
||
+ | |45 |
||
+ | | - |
||
+ | | - |
||
+ | |H1-T10 |
||
+ | |7.03 |
||
+ | |? |
||
+ | |? |
||
+ | |? |
||
+ | |2.068 |
||
+ | |4.951 |
||
+ | |? |
||
+ | |No |
||
+ | |Ning 2021-09-27 |
||
|- |
|- |
||
− | | |
+ | |SiO2||3 |
− | ||| |
+ | | ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana |
|- |
|- |
||
− | | |
+ | |SiO2||3 |
− | ||| |
+ | | ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana |
|- |
|- |
||
+ | |SiO2||3 |
||
+ | | ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana |
||
+ | |- |
||
+ | |Ti |
||
+ | |3.0 |
||
+ | | |
||
+ | |200(374v) |
||
+ | | - |
||
+ | | - |
||
+ | |45 |
||
+ | | - |
||
+ | | - |
||
+ | |H1-T10 |
||
+ | |2.52 |
||
+ | |? |
||
+ | |? |
||
+ | |? |
||
+ | |2.679 |
||
+ | |1.853 |
||
+ | |? |
||
+ | |No |
||
+ | |Ning 2021-09-27 |
||
|} |
|} |
||
''*LPD: light particle detection:'' |
''*LPD: light particle detection:'' |
||
+ | |||
*''LPDb: light particle detection before deposition'' |
*''LPDb: light particle detection before deposition'' |
||
*''LPDa: light particle detection after deposition'' |
*''LPDa: light particle detection after deposition'' |
||
+ | |||
− | == SiO2 Deposition (Sputter 5) == |
||
+ | ===SiO2 Deposition (Sputter 5)=== |
||
+ | |||
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
||
=[[Ion Beam Deposition (Veeco NEXUS)]]= |
=[[Ion Beam Deposition (Veeco NEXUS)]]= |
||
+ | ''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.'' |
||
+ | *[[IBD: Calibrating Optical Thickness|Method to calibrate multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc. |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc. |
||
− | **'''All users are required to enter their calibration deps (simple test deps only)''' |
||
− | *[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015] |
||
+ | ===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''=== |
||
− | ==SiO{{sub|2}} deposition (IBD)== |
||
+ | |||
− | *[[media: New IBD SiO2 Standard Recipe.pdf |SiO<sub>2</sub> Standard Recipe]] |
||
+ | ==SiO<sub>2</sub> deposition (IBD)== |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014] |
||
+ | |||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014] |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''" |
||
− | *[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>] |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021 |
||
− | *[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015] |
||
+ | |||
− | *[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015] |
||
+ | ====SiO<sub>2</sub> Thin-Film Properties (IBD)==== |
||
− | *[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016] |
||
− | *[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016] |
||
− | ====== SiO2 1hr deposition properties: ====== |
||
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate ~350 nm/min |
*Stress ≈ -390MPa (compressive) |
*Stress ≈ -390MPa (compressive) |
||
*Refractive Index: ≈ 1.494 |
*Refractive Index: ≈ 1.494 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
− | ** |
+ | **A = 1.480 |
− | ** |
+ | **B = 0.00498 |
− | ** |
+ | **C = -3.2606e-5 |
+ | |||
+ | ====SiO<sub>2</sub> Uniformity==== |
||
+ | ''Measured in June 2010 (Demis D. John)'' |
||
+ | {| class="wikitable" |
||
+ | |+Uniformity Statistics |
||
+ | ! |
||
+ | !Thickness (nm) |
||
+ | !Refractive Index |
||
+ | (at 632nm) |
||
+ | |- |
||
+ | |Mean (Avg.), nm |
||
+ | |1677.80 |
||
+ | |1.480 |
||
+ | |- |
||
+ | |Min |
||
+ | |1671.09 |
||
+ | |1.479 |
||
+ | |- |
||
+ | |Max |
||
+ | |1688.9 |
||
+ | |1.482 |
||
+ | |- |
||
+ | |Std. Deviation (nm) |
||
+ | |5.99 |
||
+ | |8.6e-4 |
||
+ | |} |
||
+ | [[File:IBD - Deposition Uniformity across a 6-inch wafer 2010-06-15 v2.png|alt=Plot of SiO2 thickness and refractive index|none|thumb|Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. ''Credit: Demis D. John, 2010-06-15'']] |
||
+ | <br /> |
||
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
||
+ | |||
− | *[[media:IBD SiNdeposition.pdf|Si<sub>3</sub>N<sub>4</sub> Standard Recipe]] |
||
− | *[https:// |
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''" |
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Process Control Data</nowiki>] |
+ | |||
+ | ===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)=== |
||
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate: ~11nm/min |
*Stress ≈ -1590MPa (compressive) |
*Stress ≈ -1590MPa (compressive) |
||
*Refractive Index: ≈ 1.969 |
*Refractive Index: ≈ 1.969 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
− | ** |
+ | **A = 2.000 |
− | ** |
+ | **B = 0.01974 |
− | ** |
+ | **C = 1.2478e-4 |
− | == |
+ | ==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)== |
− | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
||
− | {| |
||
− | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
− | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
− | |} |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''" |
||
− | ==Ta{{sub|2}}O{{sub|5}} deposition (IBD)== |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
− | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021 |
||
− | *[[media:IBD Ta2O5 deposition details.pdf|Ta{{sub|2}}O{{sub|5}} Standard Recipe]] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014] |
||
− | |||
− | *[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016] |
||
− | *[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016] |
||
+ | ====Ta2O5 Thin-Film Properies (IBD)==== |
||
*Ta2O5 1hr depositions: |
*Ta2O5 1hr depositions: |
||
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate ≈ 2 nm/min |
*Stress ≈ -232MPa (compressive) |
*Stress ≈ -232MPa (compressive) |
||
*Refractive Index: ≈ 2.172 |
*Refractive Index: ≈ 2.172 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
− | ** |
+ | **A = 2.1123 |
− | ** |
+ | **B = 0.018901 |
− | ** |
+ | **C = -0.016222 |
− | == |
+ | ==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)== |
+ | |||
− | *[[media:New IBD TiO2 deposition.pdf|TiO<sub>2</sub> Standard Recipe]] |
||
+ | *Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''" |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGVXVkM4dEdXaU15M09HNGhJbGUycVE#gid=sharing TiO<sub>2</sub> Data December 2014] |
||
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Process Control Data</nowiki>] |
+ | |||
+ | ===Al2O3 Thin-Film Properties (IBD)=== |
||
+ | |||
+ | *Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | *HF etch rate ≈ 167nm/min |
||
+ | *Stress ≈ -332MPa (compressive) |
||
+ | *Refractive Index: ≈ 1.656 |
||
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
||
+ | **A = ''To Be Added'' |
||
+ | **B = |
||
+ | **C = |
||
+ | *Absorbing < ~350nm |
||
+ | |||
+ | ==TiO<sub>2</sub> deposition (IBD)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''" |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
+ | |||
+ | ===TiO<sub>2</sub> Thin-Film Properties (IBD)=== |
||
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
||
Line 373: | Line 542: | ||
*Stress ≈ -445MPa (compressive) |
*Stress ≈ -445MPa (compressive) |
||
*Refractive Index: ≈ 2.259 |
*Refractive Index: ≈ 2.259 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
− | ** |
+ | **A = 2.435 |
− | ** |
+ | **B = -4.9045e-4 |
− | ** |
+ | **C = 0.01309 |
− | *Absorbing < ~350nm |
+ | *Absorbing < ~350nm wavelength |
− | == |
+ | ==SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)== |
+ | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010. |
||
− | * Al2O3 standard recipe: 1_Al2O3_dep |
||
+ | {| |
||
+ | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
+ | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
+ | |} |
||
+ | ==Standard Cleaning Procedure (IBD)== |
||
− | * [https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018] |
||
+ | You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times: |
||
− | * [https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018] |
||
+ | *5min GridClean for 1hr or less deposition |
||
− | *Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | *10min GridClean for up to 2hrs of dep. |
||
− | *HF etch rate ~167nm/min |
||
+ | *Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example. |
||
− | *Stress ≈ -332MPa (compressive) |
||
+ | |||
− | *Refractive Index: ≈ 1.656 |
||
+ | ===Standard Grid-Clean Recipe=== |
||
− | *[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) |
||
+ | ''[[To Be Added]]'' |
||
− | ** A = |
||
+ | |||
− | ** B = |
||
+ | ==Reference Recipes (Disabled Tools)== |
||
− | ** C = |
||
+ | |||
− | *Absorbing < ~350nm |
||
+ | ===[[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]]=== |
||
+ | '''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
||
+ | '''Al Deposition (Sputter 2)''' |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe] |
||
+ | |||
+ | '''AlN<sub>x</sub> Deposition (Sputter 2)''' |
||
+ | |||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe] |
||
+ | |||
+ | '''Au Deposition (Sputter 2)''' |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe] |
||
+ | '''TiO<sub>2</sub> Deposition (Sputter 2)''' |
||
− | =[[Sputter 2 (SFI Endeavor)]]= |
||
− | == Al Deposition (Sputter 2) == |
||
− | *[[media:20-Al-Sputtering-Film-Sputter-2.pdf|Al Deposition Recipe]] |
||
− | == AlN<sub>x</sub> Deposition (Sputter 2) == |
||
− | *[[media:Sputter-2-AlN-Endeavor-rev1.pdf|AlN<sub>x</sub> Deposition Recipe]] |
||
+ | *[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe] |
||
− | == Au Deposition (Sputter 2) == |
||
− | *[[media:21-Au-Sputter-film-recipes-Sputter-2.pdf|Au Deposition Recipe]] |
||
− | == TiO<sub>2</sub> Deposition (Sputter 2) == |
||
− | *[[media:22-TiO2-Film-Sputter-2.pdf|TiO2<sub>2</sub> Deposition Recipe]] |
Revision as of 11:33, 9 July 2024
Back to Vacuum Deposition Recipes. R1
Sputter 3 (AJA ATC 2000-F)
Please see the SignupMonkey Page for a list of currently installed targets.
Tips & Tricks
Ignition Issues
It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.
Materials Table (Sputter 3)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Target Consumed Lower Limit | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Au | - | - | - | - | - | - | - | - | - | - | - | - | - | Set: 200 W
Read: 400 VDC |
no | |
Al2O3 | 3 | 200 (RF2) | off | 20 | 30 | 1.5 | 1.52"-4mm | 5.32 | 1.6478 | 0 | no | Demis D. John | ||||
Co | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 2.3 | - | - | - | - | yes | Alex K | |
Cr | 5 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 6.84 | - | - | - | - | no | Brian | |
Cu | 1.5 | 50(395v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 4.15 | - | - | - | - | no | Ning | |
Cu | 5 | 150(~490v) | 0 | 20 | 15 | 0 | 0 | 0.82"-9 | 8 | - | - | - | - | yes | Ning | |
Fe | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.25 | - | - | - | - | No | Alex K | |
Mo | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 13.15 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.23 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.82 | - | - | - | - | yes | Ning | |
Ni | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 2.50 | - | - | - | - | yes | Ning | |
Ni | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.4 | - | - | - | - | yes | Ning | |
Ni | 1.5 | 50(399v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 0.96 | - | - | - | - | no | Ning | |
Pt | 3 | 50 | 0 | 20 | 25 | 0 | 0 | 0.82"-9 | 2.9 | - | - | - | - | no | Ning | |
Si | 8 | 250 | 0 | 25 | 25 | 0 | 0 | 15-3 | 1.4 | - | - | - | - | no | Gerhard - ramp 2W/s - 3% Unif 4" wafer | |
SiN | 3 | 200 | 10 | 20 | 25 | 3 | 0 | 25-9 | 1.56 | - | - | 1.992 | - | yes | Brian | |
SiN | 3 | 250 | 10 | 20 | 25 | 2.5 | 0 | 25-9 | 2.1 | - | - | 2.06 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 3 | 25-9 | 3.68 | - | - | 1.447 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 5 | 45-3 | 2.60 | - | - | 1.471 | - | yes | Brian | |
SiO2 | 3 | 250 | 10 | 20 | 25 | 0 | 2.5 | 25-9 | 4.3 | - | - | 1.485 | - | yes | Brian | |
Ta | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.47 | - | - | - | - | yes | Ning | |
Ta | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.03 | - | - | - | - | yes | Ning | |
Ti | 3 | 100 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.34 | - | - | - | - | yes | Ning | |
SampleClean-NativeSiO2 | 10 | 0 | 18 | 20 | 25 | 0 | 0 | 44-4 | - | - | - | - | - | yes | 150Volts 5 min |
Height Conversion for Older Recipes
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:
Old (mm) | New (inches) | Typical Gun Tilt (mm) |
---|---|---|
15 | ||
25 | 0.82 | 9 |
44 | 1.52 | 4 |
Interpolation plot can be found here.
Fe and Co Deposition (Sputter 3)
Cu Deposition (Sputter 3)
Mo Deposition (Sputter 3)
Ni and Ta Deposition (Sputter 3)
SiO2 Deposition (Sputter 3)
SiN Deposition (Sputter 3)
Ti Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 4)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 4.4 | - | - | - | - | Yes | Ning Cao | |
Al2O3 | 3 | RF4-Sw1 | 200 | 0 | 20 | 30 | 0 | 1.5 | H2.75-T5 | 5.1 | 1.64202 | 0 | partial | Demis D. John | ||
Au | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 17.7 | - | - | - | - | Yes | Ning Cao | |
Au | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 35.5 | - | - | - | - | Yes | Demis: 200W rate (Max for Au) 2022-08-03 | |
Cu | 5 | 150 | 0 | 20 | 30 | 0 | 0 | H0.82-T9 | 6.7 | No (SEM available) | Ning Cao | |||||
Nb | 4 | 250 | 0 | 20 | 30 | 0 | 0 | H2.00-T7 | 7.5 | - | - | - | - | No | ||
Pt | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 7.4 | - | - | - | - | Yes | Ning Cao | |
Pt | 3 | 50(439V) | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 3.9 | - | - | - | - | Yes | Ning Cao | |
Ru | 3 | 200 | 45 | H2.75-T4 | ~10 | Yes | Ning Cao | |||||||||
Ti | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 2.3 | - | - | - | - | Yes | Ning Cao | |
TiN | 3 | 150 | 110V | 20 | 48.25 | 1.75 | 0 | H2.5-T5 | 2 | - | 60 | - | - | No | ||
TiO2 | 3 | 250(RF:450V) | 0 | 20 | 45 | 0 | 3 | H2.75-T5 | 4.3 | - | - | - | Yes | Ning Cao | ||
TiW | 4.5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 4.7 | - | - | - | - | Yes | Ning Cao | |
TiW | 4.5 | 300 | 0 | 75 | 45 | 0 | 0 | H2.75-T5 | 9.5 | -150 to 150 | 60 | - | - | Yes | 10%Ti by Wt | |
W | 3 | 300 | 0 | 50 | 45 | 0 | 0 | H2.75-T5 | 11.5 | -150 to 150 | 11 | - | - | Yes | Jeremy Watcher |
Au Deposition (Sputter 4)
Al Deposition (Sputter 4)
Al2O3 Deposition (Sputter 4)
- Rate: 5.134 nm/min
- Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
- A = 1.626
- B = 5.980E-3
- C = 1.622E-4
Pt Deposition (Sputter 4)
Ru Deposition (Sputter 4)
- Ruthenium Hardmask for SiO2 Etching - Full Process Traveler by Ning Cao
- Deposition Rate ~10nm/min
- See Fluorine-ICP > SiO2 Etching page for more info.
Ti-Au Deposition (Sputter 4)
TiO2 Deposition (Sputter 4)
TiW Deposition (Sputter 4)
W-TiW Deposition (Sputter 4)
Sputter 5 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 5)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(V) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | Rq(nm) | n@633nm | k@633nm | LPDb/LPDa* | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 250 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 2.5 | 22 | No (SEM available) | Ning | ||||||
Al2O3 | 1.5 | DC5-SW1 | 150 | - | - | 45 | - | 5 | H2.75-T5 | 5.3 | ? | ? | ? | 1.641 | - | ? | No | Demis 2018-04-13 |
Pt | 3.0 | 200(507v) | - | - | 45 | - | - | H1-T10 | 7.03 | ? | ? | ? | 2.068 | 4.951 | ? | No | Ning 2021-09-27 | |
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 2 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 153/6384 | No | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 4.5 | H1.0-T10 | 2.29 | -515 | - | 0.210 | 1.49 | 138/4445 | No ( AFM available) | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 6 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 27/1515 | Yes | Biljana | ||
Ti | 3.0 | 200(374v) | - | - | 45 | - | - | H1-T10 | 2.52 | ? | ? | ? | 2.679 | 1.853 | ? | No | Ning 2021-09-27 |
*LPD: light particle detection:
- LPDb: light particle detection before deposition
- LPDa: light particle detection after deposition
SiO2 Deposition (Sputter 5)
Ion Beam Deposition (Veeco NEXUS)
Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.
- Method to calibrate multi-layer optical films: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.
IBD Process Control Plots - Plots of all process control data.
SiO2 deposition (IBD)
- SiO2 [IBD] Standard Recipe - "1_SiO2_dep"
- SiO2 [IBD] Process Control Data
- SiO2 [IBD] Historical Data - Before Oct. 2021
SiO2 Thin-Film Properties (IBD)
- Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ~350 nm/min
- Stress ≈ -390MPa (compressive)
- Refractive Index: ≈ 1.494
- Cauchy Parameters (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
SiO2 Uniformity
Measured in June 2010 (Demis D. John)
Thickness (nm) | Refractive Index
(at 632nm) | |
---|---|---|
Mean (Avg.), nm | 1677.80 | 1.480 |
Min | 1671.09 | 1.479 |
Max | 1688.9 | 1.482 |
Std. Deviation (nm) | 5.99 | 8.6e-4 |
Si3N4 deposition (IBD)
- Si3N4 [IBD] Standard Recipe - "1_Si3N4_Dep"
- Si3N4 [IBD] Process Control Data
Si3N4 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate: ~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- Cauchy Parameters (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
Ta2O5 deposition (IBD)
- Ta2O5 [IBD] Standard Recipe - "1_Ta2O5_dep"
- Ta2O5 [IBD] Process Control Data
- Ta2O5 [IBD] Historical Data - before Oct. 2021
Ta2O5 Thin-Film Properies (IBD)
- Ta2O5 1hr depositions:
- Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ≈ 2 nm/min
- Stress ≈ -232MPa (compressive)
- Refractive Index: ≈ 2.172
- Cauchy Parameters (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
Al2O3 deposition (IBD)
- Al2O3 [IBD] Standard Recipe - "1_Al2O3_dep"
- Al2O3 [IBD] Process Control Data
Al2O3 Thin-Film Properties (IBD)
- Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
- HF etch rate ≈ 167nm/min
- Stress ≈ -332MPa (compressive)
- Refractive Index: ≈ 1.656
- Cauchy Parameters (350-2000nm):
- A = To Be Added
- B =
- C =
- Absorbing < ~350nm
TiO2 deposition (IBD)
- TiO2 [IBD] Standard Recipe - "1_TiO2_dep"
- TiO2 [IBD] Process Control Data
TiO2 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- Cauchy Parameters (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm wavelength
SiOxNy deposition (IBD)
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by Demis D. John, 2010.
Standard Cleaning Procedure (IBD)
You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:
- 5min GridClean for 1hr or less deposition
- 10min GridClean for up to 2hrs of dep.
- Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.
Standard Grid-Clean Recipe
Reference Recipes (Disabled Tools)
Sputter 2 (SFI Endeavor)
This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)