Difference between revisions of "Sputtering Recipes"
(→Sputter 3 (AJA ATC 2000-F): Reduced Heading Levels below "Page Title") |
(→SiO2 Uniformity: added table of stats) |
||
(21 intermediate revisions by 2 users not shown) | |||
Line 6: | Line 6: | ||
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets. |
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets. |
||
+ | ===Tips & Tricks=== |
||
− | === Materials Table (Sputter 3) === |
||
+ | |||
+ | ====Ignition Issues==== |
||
+ | It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit. |
||
+ | |||
+ | ===Materials Table (Sputter 3)=== |
||
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
− | !Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm |
+ | !Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm |
!Target Consumed Lower Limit!!Data Below!!Comment |
!Target Consumed Lower Limit!!Data Below!!Comment |
||
|- |
|- |
||
Line 173: | Line 178: | ||
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets. |
Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets. |
||
− | === |
+ | ===Materials Table (Sputter 4)=== |
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
!Material!!P(mT) |
!Material!!P(mT) |
||
− | !Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment |
+ | !Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment |
|- |
|- |
||
|Al||5 |
|Al||5 |
||
Line 205: | Line 210: | ||
|- |
|- |
||
|Au||10 |
|Au||10 |
||
− | | || |
+ | | ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03 |
|- |
|- |
||
|Cu |
|Cu |
||
Line 293: | Line 298: | ||
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness] |
*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness] |
||
− | === |
+ | ===Ru Deposition (Sputter 4)=== |
+ | |||
− | * [https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao |
||
+ | *[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao |
||
− | ** Deposition Rate ~10nm/min |
||
+ | **Deposition Rate ~10nm/min |
||
− | ** See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info. |
||
+ | **See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info. |
||
===Ti-Au Deposition (Sputter 4)=== |
===Ti-Au Deposition (Sputter 4)=== |
||
Line 309: | Line 315: | ||
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness] |
*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness] |
||
+ | |||
===W-TiW Deposition (Sputter 4)=== |
===W-TiW Deposition (Sputter 4)=== |
||
Line 317: | Line 324: | ||
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets. |
||
− | === |
+ | ===Materials Table (Sputter 5)=== |
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. |
||
{| class="wikitable sortable" |
{| class="wikitable sortable" |
||
|- |
|- |
||
!Material!!P(mT) |
!Material!!P(mT) |
||
− | !Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment |
+ | !Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment |
|- |
|- |
||
|Al |
|Al |
||
Line 363: | Line 370: | ||
|No |
|No |
||
|Demis 2018-04-13 |
|Demis 2018-04-13 |
||
+ | |- |
||
+ | |Pt |
||
+ | |3.0 |
||
+ | | |
||
+ | |200(507v) |
||
+ | | - |
||
+ | | - |
||
+ | |45 |
||
+ | | - |
||
+ | | - |
||
+ | |H1-T10 |
||
+ | |7.03 |
||
+ | |? |
||
+ | |? |
||
+ | |? |
||
+ | |2.068 |
||
+ | |4.951 |
||
+ | |? |
||
+ | |No |
||
+ | |Ning 2021-09-27 |
||
|- |
|- |
||
|SiO2||3 |
|SiO2||3 |
||
Line 373: | Line 400: | ||
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana |
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana |
||
|- |
|- |
||
+ | |Ti |
||
+ | |3.0 |
||
+ | | |
||
+ | |200(374v) |
||
+ | | - |
||
+ | | - |
||
+ | |45 |
||
+ | | - |
||
+ | | - |
||
+ | |H1-T10 |
||
+ | |2.52 |
||
+ | |? |
||
+ | |? |
||
+ | |? |
||
+ | |2.679 |
||
+ | |1.853 |
||
+ | |? |
||
+ | |No |
||
+ | |Ning 2021-09-27 |
||
|} |
|} |
||
''*LPD: light particle detection:'' |
''*LPD: light particle detection:'' |
||
Line 383: | Line 429: | ||
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film] |
||
− | + | =[[Ion Beam Deposition (Veeco NEXUS)]]= |
|
+ | ''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.'' |
||
+ | |||
+ | *[[IBD: Calibrating Optical Thickness|Method to calibrate multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc. |
||
− | + | ===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''=== |
|
− | **'''All users are required to enter their calibration deps (simple test deps only)''' |
||
− | *[https://docs.google.com/spreadsheets/d/1y704PRxvXf8bbqb79CrISnk2t0FeojYVJIjrAcBU2_w/edit#gid=sharing Particulates in SiO2 and Ta2O5 in 2015] |
||
− | + | ==SiO<sub>2</sub> deposition (IBD)== |
|
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''" |
||
− | ==== SiO<sub>2</sub> Historical Data ==== |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
− | *[//wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub> Standard Recipe] |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021 |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dFRJLUZUdXB4WFA1S1BMMWQ4WndpTWc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data December 2014] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGNyV083bmpzMjZpZ0JFVWhoOUpaN3c#gid=sharing SiO<sub>2</sub> Thickness uniformity 2014] |
||
− | *[https://docs.google.com/spreadsheets/d/1pxQkTm274CVjzlnE3cZgE5ycgXfIk8cVCAwTg5x7Xx4/edit#gid=sharing SiO<sub>2</sub> Data-15min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1vYSV7iGIMJsqmlxF6bAjdzuaATcDGxBvwlhb2XYJoWg/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1qnlny3A8jRUPU-8O1ycx9MUFmpti_pRv93rT1pXHMWM/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1KPLP68f9oC6H2C39r4_Lcd9RkjPiVnZTiz6sMYoJodc/edit#gid=1868267914=sharing SiO<sub>2</sub> Data-1hr depositions 2016] |
||
− | *[https://docs.google.com/spreadsheets/d/1dFI1B2WxS7oEGMPl2dlLtmiAin-6EKWSEj9hFezB4_w/edit#gid==sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2016] |
||
− | ====SiO<sub>2</sub> |
+ | ====SiO<sub>2</sub> Thin-Film Properties (IBD)==== |
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate ~350 nm/min |
*Stress ≈ -390MPa (compressive) |
*Stress ≈ -390MPa (compressive) |
||
*Refractive Index: ≈ 1.494 |
*Refractive Index: ≈ 1.494 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 1.480 |
**A = 1.480 |
||
**B = 0.00498 |
**B = 0.00498 |
||
**C = -3.2606e-5 |
**C = -3.2606e-5 |
||
− | === |
+ | ====SiO<sub>2</sub> Uniformity==== |
+ | ''Measured in June 2010 (Demis D. John)'' |
||
+ | {| class="wikitable" |
||
+ | |+Uniformity Statistics |
||
+ | ! |
||
+ | !Thickness (nm) |
||
+ | !Refractive Index |
||
+ | (at 632nm) |
||
+ | |- |
||
+ | |Mean (Avg.), nm |
||
+ | |1677.80 |
||
+ | |1.480 |
||
+ | |- |
||
+ | |Min |
||
+ | |1671.09 |
||
+ | |1.479 |
||
+ | |- |
||
+ | |Max |
||
+ | |1688.9 |
||
+ | |1.482 |
||
+ | |- |
||
+ | |Std. Deviation (nm) |
||
+ | |5.99 |
||
+ | |8.6e-4 |
||
+ | |} |
||
+ | [[File:IBD - Deposition Uniformity across a 6-inch wafer 2010-06-15 v2.png|alt=Plot of SiO2 thickness and refractive index|none|thumb|Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. ''Credit: Demis D. John, 2010-06-15'']] |
||
+ | <br /> |
||
+ | ==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''" |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
− | + | ===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)=== |
|
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE4RldRQnA1N1ptOUlHQVc3QjNXSkE#gid=sharing Si<sub>3</sub>N<sub>4</sub> Data December 2014] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEdsbWRhYW9mbFRLem56TjFFWjRwR1E#gid=sharing Si<sub>3</sub>N<sub>4</sub> Thickness uniformity 2014] |
||
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate: ~11nm/min |
*Stress ≈ -1590MPa (compressive) |
*Stress ≈ -1590MPa (compressive) |
||
*Refractive Index: ≈ 1.969 |
*Refractive Index: ≈ 1.969 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.000 |
**A = 2.000 |
||
**B = 0.01974 |
**B = 0.01974 |
||
**C = 1.2478e-4 |
**C = 1.2478e-4 |
||
− | == |
+ | ==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)== |
− | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact [[Demis D. John|Demis]] for more info. |
||
− | {| |
||
− | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
− | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
− | |} |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''" |
||
− | ===Ta{{sub|2}}O{{sub|5}} deposition (IBD)=== |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021 |
||
− | ==== |
+ | ====Ta2O5 Thin-Film Properies (IBD)==== |
− | *[//wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta{{sub|2}}O{{sub|5}} Standard Recipe] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGhhUGdCR2JudkZJU3pBemR4bS1GWWc#gid=0=sharing Ta{{sub|2}}O{{sub|5}} Data December 2014] |
||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dE5xbVFyUFZqdTdUN0JRSUNvMGFGb2c#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity 2014] |
||
− | *[https://docs.google.com/spreadsheets/d/1WRqzTTIX4D7Un-XqHqSB66JuSplrMiZAzGvjYFZ-Gtk/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1BZrNtzHwWqfLhvZW4UY01CUfkObW70MxW9jdLhBcunc/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-15 min depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1saOA_9SwcPCkuW7uGgOSXhvtwrMkKJUxeS4wRE9qxQ8/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1wXAtWbbE8dvvulJxJXkwQyejgcrz51t-HH4omTq0scs/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2015] |
||
− | *[https://docs.google.com/spreadsheets/d/1A0bVnVgwPfj5JfAtmgNSeto2Rix8qOfiGO9mpXa433g/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Data December-1hr depositions 2016] |
||
− | *[https://docs.google.com/spreadsheets/d/1U7XUvluOpgD7tsciZ1pAFGiFsKJKvym6mH5hKaSt5b0/edit#gid=sharing Ta{{sub|2}}O{{sub|5}} Thickness uniformity-1hr depositions 2016] |
||
− | |||
− | ==== Ta2O5 Deposition/Film Properies (IBD) ==== |
||
*Ta2O5 1hr depositions: |
*Ta2O5 1hr depositions: |
||
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps) |
||
− | *HF |
+ | *HF Etch Rate ≈ 2 nm/min |
*Stress ≈ -232MPa (compressive) |
*Stress ≈ -232MPa (compressive) |
||
*Refractive Index: ≈ 2.172 |
*Refractive Index: ≈ 2.172 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.1123 |
**A = 2.1123 |
||
**B = 0.018901 |
**B = 0.018901 |
||
**C = -0.016222 |
**C = -0.016222 |
||
− | == |
+ | ==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)== |
− | * |
+ | *Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''" |
− | *[https://docs.google.com/ |
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Process Control Data</nowiki>] |
+ | |||
− | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dF9YSW9jTDJzY19MbmVEbUQtVzJVdVE#gid=sharing TiO<sub>2</sub> Thickness uniformity 2014] |
||
+ | ===Al2O3 Thin-Film Properties (IBD)=== |
||
+ | |||
+ | *Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | *HF etch rate ≈ 167nm/min |
||
+ | *Stress ≈ -332MPa (compressive) |
||
+ | *Refractive Index: ≈ 1.656 |
||
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
||
+ | **A = ''To Be Added'' |
||
+ | **B = |
||
+ | **C = |
||
+ | *Absorbing < ~350nm |
||
+ | |||
+ | ==TiO<sub>2</sub> deposition (IBD)== |
||
+ | |||
+ | *[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''" |
||
+ | *[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>] |
||
+ | |||
+ | ===TiO<sub>2</sub> Thin-Film Properties (IBD)=== |
||
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps) |
||
Line 470: | Line 542: | ||
*Stress ≈ -445MPa (compressive) |
*Stress ≈ -445MPa (compressive) |
||
*Refractive Index: ≈ 2.259 |
*Refractive Index: ≈ 2.259 |
||
− | *[[ |
+ | *[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm): |
**A = 2.435 |
**A = 2.435 |
||
**B = -4.9045e-4 |
**B = -4.9045e-4 |
||
**C = 0.01309 |
**C = 0.01309 |
||
− | *Absorbing < ~350nm |
+ | *Absorbing < ~350nm wavelength |
− | == |
+ | ==SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)== |
+ | These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010. |
||
+ | {| |
||
+ | ![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]] |
||
+ | ![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]] |
||
+ | |} |
||
+ | ==Standard Cleaning Procedure (IBD)== |
||
− | *Al2O3 standard recipe: 1_Al2O3_dep |
||
+ | You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times: |
||
+ | *5min GridClean for 1hr or less deposition |
||
− | *[https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018] |
||
+ | *10min GridClean for up to 2hrs of dep. |
||
− | *[https://docs.google.com/spreadsheets/d/1rjwDQ0WJOIL7XWx2KWQ4fEPjNkr6GEmiXGmQXZnWFOI/edit#gid= Al2O3 Thickness uniformity 2018] |
||
+ | *Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example. |
||
+ | ===Standard Grid-Clean Recipe=== |
||
− | *Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps) |
||
+ | ''[[To Be Added]]'' |
||
− | *HF etch rate ~167nm/min |
||
− | *Stress ≈ -332MPa (compressive) |
||
− | *Refractive Index: ≈ 1.656 |
||
− | *[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm):( working on) |
||
− | **A = |
||
− | **B = |
||
− | **C = |
||
− | *Absorbing < ~350nm |
||
− | == |
+ | ==Reference Recipes (Disabled Tools)== |
− | === |
+ | ===[[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]]=== |
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.''' |
||
'''Al Deposition (Sputter 2)''' |
'''Al Deposition (Sputter 2)''' |
||
+ | |||
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe] |
*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe] |
||
+ | |||
'''AlN<sub>x</sub> Deposition (Sputter 2)''' |
'''AlN<sub>x</sub> Deposition (Sputter 2)''' |
||
+ | |||
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe] |
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe] |
||
+ | |||
'''Au Deposition (Sputter 2)''' |
'''Au Deposition (Sputter 2)''' |
||
+ | |||
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe] |
*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe] |
||
+ | |||
'''TiO<sub>2</sub> Deposition (Sputter 2)''' |
'''TiO<sub>2</sub> Deposition (Sputter 2)''' |
||
+ | |||
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe] |
*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe] |
Revision as of 11:33, 9 July 2024
Back to Vacuum Deposition Recipes. R1
Sputter 3 (AJA ATC 2000-F)
Please see the SignupMonkey Page for a list of currently installed targets.
Tips & Tricks
Ignition Issues
It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.
Materials Table (Sputter 3)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Target Consumed Lower Limit | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Au | - | - | - | - | - | - | - | - | - | - | - | - | - | Set: 200 W
Read: 400 VDC |
no | |
Al2O3 | 3 | 200 (RF2) | off | 20 | 30 | 1.5 | 1.52"-4mm | 5.32 | 1.6478 | 0 | no | Demis D. John | ||||
Co | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 2.3 | - | - | - | - | yes | Alex K | |
Cr | 5 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 6.84 | - | - | - | - | no | Brian | |
Cu | 1.5 | 50(395v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 4.15 | - | - | - | - | no | Ning | |
Cu | 5 | 150(~490v) | 0 | 20 | 15 | 0 | 0 | 0.82"-9 | 8 | - | - | - | - | yes | Ning | |
Fe | 10(5) | 200 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.25 | - | - | - | - | No | Alex K | |
Mo | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 13.15 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.23 | - | - | - | - | yes | Ning | |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.82 | - | - | - | - | yes | Ning | |
Ni | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 2.50 | - | - | - | - | yes | Ning | |
Ni | 3 | 200 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.4 | - | - | - | - | yes | Ning | |
Ni | 1.5 | 50(399v) | 0 | 20 | 25 | 0 | 0 | 25-9 | 0.96 | - | - | - | - | no | Ning | |
Pt | 3 | 50 | 0 | 20 | 25 | 0 | 0 | 0.82"-9 | 2.9 | - | - | - | - | no | Ning | |
Si | 8 | 250 | 0 | 25 | 25 | 0 | 0 | 15-3 | 1.4 | - | - | - | - | no | Gerhard - ramp 2W/s - 3% Unif 4" wafer | |
SiN | 3 | 200 | 10 | 20 | 25 | 3 | 0 | 25-9 | 1.56 | - | - | 1.992 | - | yes | Brian | |
SiN | 3 | 250 | 10 | 20 | 25 | 2.5 | 0 | 25-9 | 2.1 | - | - | 2.06 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 3 | 25-9 | 3.68 | - | - | 1.447 | - | yes | Brian | |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 5 | 45-3 | 2.60 | - | - | 1.471 | - | yes | Brian | |
SiO2 | 3 | 250 | 10 | 20 | 25 | 0 | 2.5 | 25-9 | 4.3 | - | - | 1.485 | - | yes | Brian | |
Ta | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.47 | - | - | - | - | yes | Ning | |
Ta | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.03 | - | - | - | - | yes | Ning | |
Ti | 3 | 100 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.34 | - | - | - | - | yes | Ning | |
SampleClean-NativeSiO2 | 10 | 0 | 18 | 20 | 25 | 0 | 0 | 44-4 | - | - | - | - | - | yes | 150Volts 5 min |
Height Conversion for Older Recipes
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:
Old (mm) | New (inches) | Typical Gun Tilt (mm) |
---|---|---|
15 | ||
25 | 0.82 | 9 |
44 | 1.52 | 4 |
Interpolation plot can be found here.
Fe and Co Deposition (Sputter 3)
Cu Deposition (Sputter 3)
Mo Deposition (Sputter 3)
Ni and Ta Deposition (Sputter 3)
SiO2 Deposition (Sputter 3)
SiN Deposition (Sputter 3)
Ti Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 4)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 4.4 | - | - | - | - | Yes | Ning Cao | |
Al2O3 | 3 | RF4-Sw1 | 200 | 0 | 20 | 30 | 0 | 1.5 | H2.75-T5 | 5.1 | 1.64202 | 0 | partial | Demis D. John | ||
Au | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 17.7 | - | - | - | - | Yes | Ning Cao | |
Au | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 35.5 | - | - | - | - | Yes | Demis: 200W rate (Max for Au) 2022-08-03 | |
Cu | 5 | 150 | 0 | 20 | 30 | 0 | 0 | H0.82-T9 | 6.7 | No (SEM available) | Ning Cao | |||||
Nb | 4 | 250 | 0 | 20 | 30 | 0 | 0 | H2.00-T7 | 7.5 | - | - | - | - | No | ||
Pt | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 7.4 | - | - | - | - | Yes | Ning Cao | |
Pt | 3 | 50(439V) | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 3.9 | - | - | - | - | Yes | Ning Cao | |
Ru | 3 | 200 | 45 | H2.75-T4 | ~10 | Yes | Ning Cao | |||||||||
Ti | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 2.3 | - | - | - | - | Yes | Ning Cao | |
TiN | 3 | 150 | 110V | 20 | 48.25 | 1.75 | 0 | H2.5-T5 | 2 | - | 60 | - | - | No | ||
TiO2 | 3 | 250(RF:450V) | 0 | 20 | 45 | 0 | 3 | H2.75-T5 | 4.3 | - | - | - | Yes | Ning Cao | ||
TiW | 4.5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 4.7 | - | - | - | - | Yes | Ning Cao | |
TiW | 4.5 | 300 | 0 | 75 | 45 | 0 | 0 | H2.75-T5 | 9.5 | -150 to 150 | 60 | - | - | Yes | 10%Ti by Wt | |
W | 3 | 300 | 0 | 50 | 45 | 0 | 0 | H2.75-T5 | 11.5 | -150 to 150 | 11 | - | - | Yes | Jeremy Watcher |
Au Deposition (Sputter 4)
Al Deposition (Sputter 4)
Al2O3 Deposition (Sputter 4)
- Rate: 5.134 nm/min
- Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
- A = 1.626
- B = 5.980E-3
- C = 1.622E-4
Pt Deposition (Sputter 4)
Ru Deposition (Sputter 4)
- Ruthenium Hardmask for SiO2 Etching - Full Process Traveler by Ning Cao
- Deposition Rate ~10nm/min
- See Fluorine-ICP > SiO2 Etching page for more info.
Ti-Au Deposition (Sputter 4)
TiO2 Deposition (Sputter 4)
TiW Deposition (Sputter 4)
W-TiW Deposition (Sputter 4)
Sputter 5 (AJA ATC 2200-V)
Please see the SignupMonkey page for a list of currently installed targets.
Materials Table (Sputter 5)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Power Source | Pow(W) | Sub(V) | T(C) | Ar | N2 | O2 | Height-Tilt(mm) | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | Rq(nm) | n@633nm | k@633nm | LPDb/LPDa* | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Al | 5 | 250 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 2.5 | 22 | No (SEM available) | Ning | ||||||
Al2O3 | 1.5 | DC5-SW1 | 150 | - | - | 45 | - | 5 | H2.75-T5 | 5.3 | ? | ? | ? | 1.641 | - | ? | No | Demis 2018-04-13 |
Pt | 3.0 | 200(507v) | - | - | 45 | - | - | H1-T10 | 7.03 | ? | ? | ? | 2.068 | 4.951 | ? | No | Ning 2021-09-27 | |
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 2 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 153/6384 | No | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 4.5 | H1.0-T10 | 2.29 | -515 | - | 0.210 | 1.49 | 138/4445 | No ( AFM available) | Biljana | ||
SiO2 | 3 | 250 | 120 | 20 | 45 | 0 | 6 | H1.0-T10 | 2.32 | - | - | 1.49 | - | 27/1515 | Yes | Biljana | ||
Ti | 3.0 | 200(374v) | - | - | 45 | - | - | H1-T10 | 2.52 | ? | ? | ? | 2.679 | 1.853 | ? | No | Ning 2021-09-27 |
*LPD: light particle detection:
- LPDb: light particle detection before deposition
- LPDa: light particle detection after deposition
SiO2 Deposition (Sputter 5)
Ion Beam Deposition (Veeco NEXUS)
Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.
- Method to calibrate multi-layer optical films: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.
IBD Process Control Plots - Plots of all process control data.
SiO2 deposition (IBD)
- SiO2 [IBD] Standard Recipe - "1_SiO2_dep"
- SiO2 [IBD] Process Control Data
- SiO2 [IBD] Historical Data - Before Oct. 2021
SiO2 Thin-Film Properties (IBD)
- Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ~350 nm/min
- Stress ≈ -390MPa (compressive)
- Refractive Index: ≈ 1.494
- Cauchy Parameters (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
SiO2 Uniformity
Measured in June 2010 (Demis D. John)
Thickness (nm) | Refractive Index
(at 632nm) | |
---|---|---|
Mean (Avg.), nm | 1677.80 | 1.480 |
Min | 1671.09 | 1.479 |
Max | 1688.9 | 1.482 |
Std. Deviation (nm) | 5.99 | 8.6e-4 |
Si3N4 deposition (IBD)
- Si3N4 [IBD] Standard Recipe - "1_Si3N4_Dep"
- Si3N4 [IBD] Process Control Data
Si3N4 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate: ~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- Cauchy Parameters (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
Ta2O5 deposition (IBD)
- Ta2O5 [IBD] Standard Recipe - "1_Ta2O5_dep"
- Ta2O5 [IBD] Process Control Data
- Ta2O5 [IBD] Historical Data - before Oct. 2021
Ta2O5 Thin-Film Properies (IBD)
- Ta2O5 1hr depositions:
- Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
- HF Etch Rate ≈ 2 nm/min
- Stress ≈ -232MPa (compressive)
- Refractive Index: ≈ 2.172
- Cauchy Parameters (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
Al2O3 deposition (IBD)
- Al2O3 [IBD] Standard Recipe - "1_Al2O3_dep"
- Al2O3 [IBD] Process Control Data
Al2O3 Thin-Film Properties (IBD)
- Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
- HF etch rate ≈ 167nm/min
- Stress ≈ -332MPa (compressive)
- Refractive Index: ≈ 1.656
- Cauchy Parameters (350-2000nm):
- A = To Be Added
- B =
- C =
- Absorbing < ~350nm
TiO2 deposition (IBD)
- TiO2 [IBD] Standard Recipe - "1_TiO2_dep"
- TiO2 [IBD] Process Control Data
TiO2 Thin-Film Properties (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- Cauchy Parameters (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm wavelength
SiOxNy deposition (IBD)
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by Demis D. John, 2010.
Standard Cleaning Procedure (IBD)
You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:
- 5min GridClean for 1hr or less deposition
- 10min GridClean for up to 2hrs of dep.
- Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.
Standard Grid-Clean Recipe
Reference Recipes (Disabled Tools)
Sputter 2 (SFI Endeavor)
This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)