Difference between revisions of "Direct-Write Lithography Recipes"
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[[category: Lithography]] |
[[category: Lithography]] |
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[[category: Recipes]] |
[[category: Recipes]] |
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− | {{WIP}} |
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__TOC__ |
__TOC__ |
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− | == |
+ | ==[[Maskless Aligner (Heidelberg MLA150)]]== |
+ | For CAD design tips and requirements, see these pages: |
||
− | Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. ''Description of litho params- different lasers available, greyscale etc.'' |
||
+ | *[[MLA150 - Design Guidelines|Design Guidelines + Tips]] - ''useful info for designing your CAD files, alignment marks etc.'' |
||
− | === Positive Resist (MLA150) === |
||
+ | *[[MLA150 - CAD Files and Templates|CAD Files and Templates]] - example CAD files etc. |
||
− | ''General notes: Hotplates used, filters, laser wavelengths, etc.'' |
||
+ | Photolithography Recipes for the [[Maskless Aligner (Heidelberg MLA150)|Heidelberg MLA150]]. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point. |
||
− | {| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
+ | |||
+ | These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches. |
||
+ | |||
+ | '''''Any I-Line PR is usable''''', although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR. |
||
+ | |||
+ | '''<u>Note:</u>''' On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "''Series''" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the [[ASML Stepper 3 Standard Operating Procedure#Tips for FEM analysis|FEM Analysis Tips page]] for how to choose the proper exposure parameters. |
||
+ | |||
+ | The [[MLA150 - Troubleshooting#Out Of Focus Exposures|'''MLA''' '''Troubleshooting > Out-of-Focus Exposures''']] section can help you avoid bad exposures, please read it! |
||
+ | |||
+ | ===Positive Resist (MLA150)=== |
||
+ | ''We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias [[MLA150 - Design Guidelines#High-Resolution Writing|as described here]].'' |
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+ | |||
+ | Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns. |
||
+ | |||
+ | {| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
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|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
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Line 17: | Line 31: | ||
! width="75" |Thickness |
! width="75" |Thickness |
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!Laser (nm) |
!Laser (nm) |
||
− | ! width="125" |Exposure |
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
! width="100" |DeFocus |
! width="100" |DeFocus |
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+ | !Rehydrate* |
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− | ! width="75" |PEB |
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+ | ! width="75" |PEB** |
||
! width="100" |Developer |
! width="100" |Developer |
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! width="125" |Developer Time |
! width="125" |Developer Time |
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! width="300" |Comments |
! width="300" |Comments |
||
|- |
|- |
||
− | |[[ |
+ | |[[Media:AXP4000pb-Datasheet.pdf|AZ4110]] |
− | |4 krpm |
+ | |4 krpm, 30s |
− | |95°C |
+ | |95°C, 60s |
|~ 1.1 µm |
|~ 1.1 µm |
||
|405 |
|405 |
||
− | | |
+ | |240 |
+ | |5 |
||
| |
| |
||
|''none'' |
|''none'' |
||
|AZ400K:DI 1:4 |
|AZ400K:DI 1:4 |
||
|50s |
|50s |
||
+ | |Used HIMT design (good for isolated lines 0.8-1um) |
||
− | | |
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|- |
|- |
||
+ | |||
− | |[[:File:AXP4000pb-Datasheet.pdf|AZ4330]] |
||
+ | |[[Media:AXP4000pb-Datasheet.pdf|AZ4330]] |
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− | |4 krpm/30s |
||
+ | |4 krpm, 30s |
||
− | |95°C/60s |
||
+ | |95°C, 60s |
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|~ 3.3 µm |
|~ 3.3 µm |
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|405 |
|405 |
||
− | | |
+ | |320 |
+ | |6 |
||
| |
| |
||
|''none'' |
|''none'' |
||
|AZ400K:DI 1:4 |
|AZ400K:DI 1:4 |
||
|90s |
|90s |
||
+ | |Used HIMT design |
||
− | | |
||
|- |
|- |
||
− | |[[: |
+ | |[[Media:AXP4000pb-Datasheet.pdf|AZ4620]] |
+ | | |
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| |
| |
||
| |
| |
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Line 60: | Line 79: | ||
| |
| |
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|- |
|- |
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− | |[[ |
+ | |[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-3.0]] |
− | |2.5 krpm |
+ | |2.5 krpm, 30s |
− | |115°C |
+ | |115°C, 90s |
|~ 2.7 µm |
|~ 2.7 µm |
||
|405 |
|405 |
||
+ | |325 |
||
+ | | - 4 |
||
| |
| |
||
+ | |115°C, 90s |
||
− | | |
||
− | |115°C/90s |
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|AZ300MIF |
|AZ300MIF |
||
|60s |
|60s |
||
+ | |Used HIMT design. 0.6-0.9µm line/space. |
||
− | | |
||
|- |
|- |
||
− | |[[: |
+ | |[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]] |
− | |3 krpm |
+ | |3.5 krpm, 30s |
− | | |
+ | |105°C/2min |
+ | Cool 1min |
||
+ | |~ 7.0µm |
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+ | |375 |
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+ | |~550mJ |
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+ | | -20 |
||
+ | |>1hr |
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+ | |115°C, 90s |
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+ | |AZ300MiF |
||
+ | |70s |
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+ | |Rehydration after exposure is necessary, to prevent bubbles at PEB. |
||
+ | |- |
||
+ | |[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR 955-CM0.9]] |
||
+ | |3 krpm, 30s |
||
+ | |95°C, 90s |
||
|~ 0.9 µm |
|~ 0.9 µm |
||
|405 |
|405 |
||
+ | |250 |
||
+ | | - 7 |
||
| |
| |
||
+ | |110°C, 90s |
||
− | | |
||
− | |110°C/60s |
||
|AZ300MIF |
|AZ300MIF |
||
|60s |
|60s |
||
+ | |Used HIMT design |
||
− | | align="left" | |
||
|- |
|- |
||
− | |[[ |
+ | |[[Media:3600 D, D2v Spin Speed Curve.pdf|THMR-3600HP]] |
+ | |1.5 krpm, 45s; |
||
− | | |
||
+ | 250 rpm/s |
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− | | |
||
+ | |100°C, 60s |
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− | | |
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+ | |0.430µm |
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− | | |
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− | | |
+ | |405 |
+ | |180–220 |
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− | | |
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+ | |<nowiki>-4</nowiki> |
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− | | |
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− | | |
||
− | | |
||
| |
| |
||
+ | |100°C, 60s |
||
+ | |AZ300MiF |
||
+ | |20s |
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+ | |~0.4nm line/space: |
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+ | |||
+ | lower dose for clear-field, higher dose for dark-field. |
||
+ | |- |
||
+ | | colspan="12" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction. |
||
+ | <nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop |
||
|} |
|} |
||
− | === Negative Resist (MLA150) === |
||
− | ''General notes: Hotplates used, filters, laser wavelengths, etc.'' |
||
+ | ===Negative Resist (MLA150)=== |
||
− | {| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
+ | ''We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.'' |
||
+ | |||
+ | {| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
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|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
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Line 106: | Line 149: | ||
! width="75" |Thickness |
! width="75" |Thickness |
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!Laser (nm) |
!Laser (nm) |
||
− | ! width="125" |Exposure |
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
! width="100" |DeFocus |
! width="100" |DeFocus |
||
− | ! width="75" |PEB |
+ | ! width="75" |PEB* |
− | ! width="75" |Flood |
+ | ! width="75" |Flood* |
! width="100" |Developer |
! width="100" |Developer |
||
! width="125" |Developer Time |
! width="125" |Developer Time |
||
! width="300" |Comments |
! width="300" |Comments |
||
|- |
|- |
||
− | |[[ |
+ | |[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]] |
− | |6 krpm |
+ | |6 krpm, 30s |
− | |95°C |
+ | |95°C, 60s |
|~ 1.0 µm |
|~ 1.0 µm |
||
− | | |
+ | |375 |
− | | |
+ | |35 |
+ | | - 5 |
||
− | | |
||
+ | |110°C, 60s |
||
− | | |
||
|60" |
|60" |
||
|AZ300MIF |
|AZ300MIF |
||
|60s |
|60s |
||
+ | |Used UCSB design. Good for up to ~1.3um open line space. |
||
− | | align="left" | |
||
− | *??? |
||
|- |
|- |
||
+ | |[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]] |
||
− | |AZnLOF2020 |
||
− | | |
+ | |4 krpm, 30s |
− | |110°C |
+ | |110°C, 60s |
|~ 2.1µm |
|~ 2.1µm |
||
− | | |
+ | |375 |
− | | |
+ | |340 |
+ | | - 3 |
||
− | | |
||
+ | |110°C, 60s |
||
− | | |
||
|''none'' |
|''none'' |
||
|AZ300MIF |
|AZ300MIF |
||
− | | |
+ | |90s |
+ | |Used UCSB design. Good for 2um open line space. |
||
− | | |
||
|- |
|- |
||
− | |[[ |
+ | |[[Media:SU-8-2075-revA.pdf|SU-8 2075]] |
| |
| |
||
| |
| |
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Line 153: | Line 195: | ||
| |
| |
||
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. |
|Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. |
||
+ | |- |
||
+ | | colspan="12" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner afterwards, before developing. |
||
|} |
|} |
||
− | === |
+ | ===Greyscale Lithography (MLA150)=== |
+ | ''AZ4620 is the manufacturer-recommended PR for greyscale litho.'' |
||
− | ''Description...'' |
||
+ | |||
− | {| class="wikitable" border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" |
||
+ | Please see the [[MLA150 - Design Guidelines#Limitations%20.26%20Workarounds|'''MLA150 - Greyscale Design Guidelines & Limitation''']] |
||
+ | {| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
||
|- bgcolor="#D0E7FF" |
|- bgcolor="#D0E7FF" |
||
! width="100" |Resist |
! width="100" |Resist |
||
Line 163: | Line 209: | ||
! width="75" |Bake |
! width="75" |Bake |
||
! width="75" |Thickness |
! width="75" |Thickness |
||
+ | !Laser |
||
− | ! width="125" |Exposure Time |
||
+ | ! width="125" |Exposure Dose (mJ/cm<sup>2</sup>) |
||
! width="100" |Focus Offset |
! width="100" |Focus Offset |
||
+ | !Rehydrate* |
||
− | ! width="75" |PEB |
||
− | ! width="75" | |
+ | ! width="75" |PEB** |
! width="100" |Developer |
! width="100" |Developer |
||
! width="125" |Developer Time |
! width="125" |Developer Time |
||
+ | !Reflow*** |
||
! width="300" |Comments |
! width="300" |Comments |
||
|- |
|- |
||
+ | |[[Media:Az p4620 photoresist data package.pdf|AZ4620]] |
||
− | |AZ4620Z5214 |
||
− | | |
+ | |? krpm/30” |
− | |95°C |
+ | |95°C, 60” |
+ | | |
||
− | |?? µm |
||
+ | | |
||
+ | | |
||
| |
| |
||
| |
| |
||
| |
| |
||
− | |60" |
||
|AZ300MIF |
|AZ300MIF |
||
− | | |
+ | |60s |
+ | | |
||
− | | align="left" | |
||
+ | | align="left" |''To Be Added'' |
||
− | *??? |
||
+ | |- |
||
+ | |[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR 220-7.0]] |
||
+ | |3.5 krpm, 30s |
||
+ | |105°C/2min |
||
+ | Cool 1min |
||
+ | |~ 7.0µm |
||
+ | |375 |
||
+ | |~624mJ to clear large mm-area, |
||
+ | 520mJ to clear ~5µm lines. |
||
+ | | -20 |
||
+ | |≥1hr |
||
+ | |115°C, 90s |
||
+ | |AZ300MiF |
||
+ | |70s |
||
+ | |TBD |
||
+ | |<small>Author Credit:</small> |
||
+ | * <small>Patrick Curtis, 2022</small> |
||
+ | * <small>Biljana Stamenic 2023</small> |
||
+ | * <small>Demis D. John 2023</small> |
||
+ | |- |
||
+ | | |
||
+ | | colspan="12" |Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB. |
||
+ | Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile. |
||
+ | |||
+ | <small>Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our [[Frequently Asked Questions#Publications acknowledging the Nanofab|publications policy]].</small> |
||
+ | |- |
||
+ | | colspan="13" |*''Rehydration'': After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction. |
||
+ | <nowiki>**</nowiki>''PEB: Post-exposure bake'': after exposure, before develop |
||
+ | |||
+ | <nowiki>***</nowiki>''Reflow'': To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles. |
||
|} |
|} |
Revision as of 07:13, 17 July 2024
Maskless Aligner (Heidelberg MLA150)
For CAD design tips and requirements, see these pages:
- Design Guidelines + Tips - useful info for designing your CAD files, alignment marks etc.
- CAD Files and Templates - example CAD files etc.
Photolithography Recipes for the Heidelberg MLA150. All recipes were characterized on blank Silicon wafers. For different substrate coatings/materials, you will likely need to run a focus-exposure matrix ("series" exposure mode), using our params as a starting point.
These recipes use the same spin and bake params as our contact aligner and stepper recipes, using built-in hotplates on the photoresist spinner benches.
Any I-Line PR is usable, although we only characterized a select few below. Run your own Focus-Exposure Matrix to characterize a new PR.
Note: On this tool, it is common to have to run a Focus-Exposure Matrix (aka. FEM), via "Series" exposure mode, for each new layer structure and/or critical feature size. The layer structure can strongly affect the exposure parameters. See the FEM Analysis Tips page for how to choose the proper exposure parameters.
The MLA Troubleshooting > Out-of-Focus Exposures section can help you avoid bad exposures, please read it!
Positive Resist (MLA150)
We found that positive PR's worked well with the 405nm laser - the 375nm laser would likely also work. Sub-micron features are possible. Overexposure is recommended to avoid stitching and horiz/vert discrepancies; compensate for widening/narrowing using CD Bias as described here.
Note: calibrations done with the "HIMT design" will show higher dose, due to using only dark-field line/space patterns.
Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | Rehydrate* | PEB** | Developer | Developer Time | Comments |
---|---|---|---|---|---|---|---|---|---|---|---|
AZ4110 | 4 krpm, 30s | 95°C, 60s | ~ 1.1 µm | 405 | 240 | 5 | none | AZ400K:DI 1:4 | 50s | Used HIMT design (good for isolated lines 0.8-1um) | |
AZ4330 | 4 krpm, 30s | 95°C, 60s | ~ 3.3 µm | 405 | 320 | 6 | none | AZ400K:DI 1:4 | 90s | Used HIMT design | |
AZ4620 | |||||||||||
SPR 220-3.0 | 2.5 krpm, 30s | 115°C, 90s | ~ 2.7 µm | 405 | 325 | - 4 | 115°C, 90s | AZ300MIF | 60s | Used HIMT design. 0.6-0.9µm line/space. | |
SPR 220-7.0 | 3.5 krpm, 30s | 105°C/2min
Cool 1min |
~ 7.0µm | 375 | ~550mJ | -20 | >1hr | 115°C, 90s | AZ300MiF | 70s | Rehydration after exposure is necessary, to prevent bubbles at PEB. |
SPR 955-CM0.9 | 3 krpm, 30s | 95°C, 90s | ~ 0.9 µm | 405 | 250 | - 7 | 110°C, 90s | AZ300MIF | 60s | Used HIMT design | |
THMR-3600HP | 1.5 krpm, 45s;
250 rpm/s |
100°C, 60s | 0.430µm | 405 | 180–220 | -4 | 100°C, 60s | AZ300MiF | 20s | ~0.4nm line/space:
lower dose for clear-field, higher dose for dark-field. | |
*Rehydration: After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
**PEB: Post-exposure bake: after exposure, before develop |
Negative Resist (MLA150)
We found that all the negative PR's we tested required the 375nm in order to be fully exposed with reasonable dose/time.
Resist | Spin Cond. | Bake | Thickness | Laser (nm) | Exposure Dose (mJ/cm2) | DeFocus | PEB* | Flood* | Developer | Developer Time | Comments |
---|---|---|---|---|---|---|---|---|---|---|---|
AZ5214 | 6 krpm, 30s | 95°C, 60s | ~ 1.0 µm | 375 | 35 | - 5 | 110°C, 60s | 60" | AZ300MIF | 60s | Used UCSB design. Good for up to ~1.3um open line space. |
AZnLOF2020 | 4 krpm, 30s | 110°C, 60s | ~ 2.1µm | 375 | 340 | - 3 | 110°C, 60s | none | AZ300MIF | 90s | Used UCSB design. Good for 2um open line space. |
SU-8 2075 | ~70µm | 375 | Extremely viscous. Pour into a wide-mouthed bottle, dispense directly from bottle. Replace napkin at end. | ||||||||
*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal, and requires Flood Exposure with the MA6 or MJB aligner afterwards, before developing. |
Greyscale Lithography (MLA150)
AZ4620 is the manufacturer-recommended PR for greyscale litho.
Please see the MLA150 - Greyscale Design Guidelines & Limitation
Resist | Spin Cond. | Bake | Thickness | Laser | Exposure Dose (mJ/cm2) | Focus Offset | Rehydrate* | PEB** | Developer | Developer Time | Reflow*** | Comments |
---|---|---|---|---|---|---|---|---|---|---|---|---|
AZ4620 | ? krpm/30” | 95°C, 60” | AZ300MIF | 60s | To Be Added | |||||||
SPR 220-7.0 | 3.5 krpm, 30s | 105°C/2min
Cool 1min |
~ 7.0µm | 375 | ~624mJ to clear large mm-area,
520mJ to clear ~5µm lines. |
-20 | ≥1hr | 115°C, 90s | AZ300MiF | 70s | TBD | Author Credit:
|
Notes on SPR 220-7 Greyscale: Rehydration after exposure is necessary, to prevent bubbles at PEB.
Stitching leaves ridges in Y-direction with ~5% height of removed PR depth. Can be reduced via reflow, but significantly affects PR profile. Author Credit: Patrick Curtis, 2022 & Biljana Stamenic 2023 & Demis D. John 2023; Please see our publications policy. | ||||||||||||
*Rehydration: After exposure, leave sample in lab air (ok to cover in tray, with tinfoil). Allows water vapor in air to diffuse into PR to complete chemical reaction.
**PEB: Post-exposure bake: after exposure, before develop ***Reflow: To smooth out stitching lines. Will change sharp vertical profiles considerably, only good for gradually-sloped profiles. |