Contact Alignment Recipes: Difference between revisions

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{{recipes|Lithography}}
{{recipes|Lithography}}
[[category: Lithography]]

=Notes=
=Notes=

Below is a listing of contact lithography recipes for use with designated aligners. Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.
Below is a listing of contact lithography recipes for use with designated aligners.
==Positive Resist==

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.
Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.
==Negative Resist==

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.5 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, reduce exposure times by a factor of 2.4.
For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.


=[[Suss Aligners (SUSS MJB-3)]]=
=[[Suss Aligners (SUSS MJB-3)]]=

==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
==Positive Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.
|-bgcolor="#D0E7FF"

!width=100|Resist
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
!width=100|Spin Cond.
|- bgcolor="#D0E7FF"
!width=100|Bake
!width=100|Thickness
! width="100" |Resist
!width=125|Exposure Time
! width="100" |Spin Cond.
!width=100|Developer
! width="100" |Bake
!width=125|Developer Time
! width="100" |Thickness
!width=300|Comments
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|AZ4110
|4 krpm/30”
|4 krpm/30”
|95°C/60”
|95°C/60”
|~ 1.1 um
|~ 1.1 um
|8”
|8”
|AZ400K:DI 1:4
|AZ400K:DI 1:4
|50"
|50"
|align="left"|
| align="left" |
|-
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|AZ4210
|4 krpm/30”
|4 krpm/30”
|95°C/60”
|95°C/60”
|~ 2.1 um
|~ 2.1 um
|13”
|13”
|AZ400K:DI 1:4
|AZ400K:DI 1:4
|70”
|70”
|align="left"|
| align="left" |
|-
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|AZ4330
|4 krpm/30”
|4 krpm/30”
|95°C/60”
|95°C/60”
|~ 3.3 um
|~ 3.3 um
|18”
|18”
|AZ400K:DI 1:4
|AZ400K:DI 1:4
|90”
|90”
|align="left"|
| align="left" |
|-
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|SPR220-3.0
|3.5 krpm/30”
|3.5 krpm/30”
|115°C/90”
|115°C/90”
Line 54: Line 64:
|AZ300MIF
|AZ300MIF
|50”
|50”
|align="left"|
| align="left" |
*Post Bake 115°C /60”
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330
*Better Cl2 etch resistance than 4330
*{{fl|SPR220-3contactrecipe.pdf|More Information}}
*{{fl|SPR220-3contactrecipe.pdf|More Information}}

|-
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|SPR220-7.0
|3.5 krpm/45”
|3.5 krpm/45”
|115°C/120”
|115°C/120”
Line 66: Line 77:
|AZ300MIF
|AZ300MIF
|70”
|70”
|align="left"|
| align="left" |
*{{fl|SPR220-7contactrecipe.pdf|More Information}}
*{{fl|SPR220-7contactrecipe.pdf|More Information}}

|}
|}


==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
==Negative Resist (MJB-3)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"

|-bgcolor="#D0E7FF"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
!width=100|Resist
|- bgcolor="#D0E7FF"
!width=100|Spin Cond.
!width=100|Bake
! width="100" |Resist
!width=100|Thickness
! width="100" |Spin Cond.
!width=125|Exposure Time
! width="100" |Bake
!width=100|PEB
! width="100" |Thickness
!width=100|Flood
! width="125" |Exposure Time
!width=125|Developer
! width="100" |PEB*
!width=125|Developer Time
! width="100" |Flood**
!width=350|Comments
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|AZ5214
|6 krpm/30”
|6 krpm/30”
|95°C/60”
|95°C/60”
Line 91: Line 105:
|110°C/60”
|110°C/60”
|60”
|60”
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
|60"<br><br>45"
|60"<br><br>45"
|align="left"|
| align="left" |
*Concentrated 400K Dev. Etches 5214
*Concentrated 400K Dev. Etches 5214

|-
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|AZ5214
|6 krpm/30”
|6 krpm/30”
|95°C/60”
|95°C/60”
Line 105: Line 120:
|AZ300MIF
|AZ300MIF
|45”
|45”
|align="left"|
| align="left" |
*Using i-line filter in MJB-3. 0.7 um resolution possible
*Using i-line filter in MJB-3. 0.7 um resolution possible

|-
|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|AZnLOF2020
|3 krpm/30”
|3 krpm/30”
|110°C/90”
|110°C/90”
Line 117: Line 133:
|AZ300MIF
|AZ300MIF
|60”
|60”
|align="left"|
| align="left" |
*Use i-line filter
*Use i-line filter
*For Undercut
*For Undercut
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|30”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}
|}


=[[Contact Aligner (SUSS MA-6)]]=
=[[Contact Aligner (SUSS MA-6)]]=

==Positive Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |Developer
! width="125" |Developer Time
! width="300" |Comments
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4110]]
|4 krpm/30”
|95°C/60”
|~ 1.1 um
|3.3”
|AZ400K:DI 1:4
|50"
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4210]]
|4 krpm/30”
|95°C/60”
|~ 2.1 um
|5.4”
|AZ400K:DI 1:4
|70”
| align="left" |
|-
|[[Media:AXP4000pb-Datasheet.pdf|AZ4330]]
|4 krpm/30”
|95°C/60”
|~ 3.3 um
|7.5”
|AZ400K:DI 1:4
|90”
| align="left" |
|-
|[[Media:SPR955-Positive-Resist-Datasheet.pdf|SPR955CM-0.9]]
|3 krpm/30”
|95°C/60”
|~ 0.9 um
|8”
|AZ300MIF
|70”
| align="left" |
*Post Exposure Bake 110°C /60”
|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-3.0]]
|3.5 krpm/30”
|115°C/90”
|~ 2.5 um
|10.4”
|AZ300MIF
|50”
| align="left" |
*Post Bake 115°C /60”
*Better Cl2 etch resistance than 4330

|-
|[[Media:SPR220-Positive-Resist-Datasheet.pdf|SPR220-7.0]]
|3.5 krpm/45”
|115°C/120”
|~ 7.5 um
|25”
|AZ300MIF
|70”
| align="left" |
|}

==Negative Resist (MA-6)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1"
|- bgcolor="#D0E7FF"
! width="100" |Resist
! width="100" |Spin Cond.
! width="100" |Bake
! width="100" |Thickness
! width="125" |Exposure Time
! width="100" |PEB*
! width="100" |Flood Exposure**
! width="125" |Developer
! width="125" |Developer Time
! width="350" |Comments
|-
|[[Media:AZ5214-Negative-Resist-Datasheet.pdf|AZ5214]]**
|6 krpm/30”
|95°C/60”
|~ 1 um
|2.1”
|110°C/60”
|30"
|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
|60"<br><br>45"
| align="left" |
*Concentrated (undiluted) 400K Dev. Etches 5214

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2020]]
|3 krpm/30”
|110°C/90”
|~ 2.1 um
|4.2”
|110°C/60”
|
|AZ300MIF
|60”
| align="left" |
*For Undercut

|-
|[[Media:AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2035]]
|2.5 krpm/30”
|110°C/60”
|~ 3.5 um
|5.0”
|110°C/60”
|
|AZ300MIF
|70”
| align="left" |
*For Undercut

|-
|[[Media:NR9-6000PY-revA.pdf|NR9-6000PY]]
|3 krpm/30”
|140°C/180”
|~ um
|13.1”
|100°C/60”
|
|AZ300MIF
|30”
| align="left" |
*Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
*Spin-on HMDS 3krpm 30", prior to NR9-6000PY
|-
| colspan="10" |*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal
<nowiki>**</nowiki> To use AZ5214 as a negative PR requires Flood Exposure with the [[Contact Aligner (SUSS MA-6)|MA6]] or [[Suss Aligners (SUSS MJB-3)|MJB]] aligner '''''after PEB''''', before developing. See here for a [[AZ5214 - Basic Process|basic AZ5214 process]], it is different than typical negative resists.
|}

=== SU-8 Recipes ===
Staff-developed recipes for SU-8:

*[//wiki.nanotech.ucsb.edu/w/images/1/1e/47-Photolithography_of_SU8-2005.pdf SU-8-2005 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/b/bb/48-Photolithography_of_SU8-2010.pdf SU-8-2010 Recipe]
*[//wiki.nanotech.ucsb.edu/w/images/0/0c/49-Photolithography_of_SU8-2015-a.pdf SU-8-2015 Recipe]

Latest revision as of 23:41, 22 August 2024

Back to Lithography Recipes.

Notes

Below is a listing of contact lithography recipes for use with designated aligners.

Based on your sample reflectivity, absorption, and surface topography the exposure time parameters may vary. This listing is a guideline to get you started.

For best resolution using thin resists, you will need to remove any edge bead before contact and exposure. This can be done with a razor blade (not for brittle substrates), or EBR-100 on a cotton swab (wipe off excess liquid before using), or lithgraphically with a tin-foil mask, flood exposure and develop.

Also, hard contact mode will give you the most intimate contact between sample and mask, giving the best resolution. However for flat unpatterned substrates, this can cause wafers to stick to the mask plate.

Post develop bakes (not listed, aka. "hard bake") are used to make the resist more etch resistant and depend on subsequent processes. Unless otherwise noted, all exposures are done on silicon wafers.

Suss Aligners (SUSS MJB-3)

Positive Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Only Channel @2 is used/calibrated. Power of the lamp is set using the 405 nm (h-line) detector.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 8” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 13” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 18” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 25” AZ300MIF 50”
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 60” AZ300MIF 70”

Negative Resist (MJB-3)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 7.0 mW/cm2. Power of the lamp is set using the 405 nm (h-line) detector. In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

Resist Spin Cond. Bake Thickness Exposure Time PEB* Flood** Developer Developer Time Comments
AZ5214** 6 krpm/30” 95°C/60” ~ 1 um 5” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214** 6 krpm/30” 95°C/60” ~ 1 um 10” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 10” 110°C/60” AZ300MIF 60”
NR9-6000PY 3 krpm/30” 140°C/180” ~ um 30” 100°C/60” AZ300MIF 30”
  • Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
  • Spin-on HMDS 3krpm 30", prior to NR9-6000PY
*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

** To use AZ5214 as a negative PR requires Flood Exposure with the MA6 or MJB aligner after PEB, before developing. See here for a basic AZ5214 process, it is different than typical negative resists.

Contact Aligner (SUSS MA-6)

Positive Resist (MA-6)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 3.3” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 5.4” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 7.5” AZ400K:DI 1:4 90”
SPR955CM-0.9 3 krpm/30” 95°C/60” ~ 0.9 um 8” AZ300MIF 70”
  • Post Exposure Bake 110°C /60”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 10.4” AZ300MIF 50”
  • Post Bake 115°C /60”
  • Better Cl2 etch resistance than 4330
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 25” AZ300MIF 70”

Negative Resist (MA-6)

Unless otherwise noted, bakes are on hot plates and the exposure of the resist is done using no filtering at 9 mW/cm2 (Channel 1). Power of the lamp is set using the 365 nm (i-line) detector. For reference, this would equate to 17.5 mW/cm² when measured with a 405 nm (h-line) detector.

In general, many negative resists require post-exposure-bakes (PEB) / flood exposures in order to make the negative tone of the image. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut. For the MA-6 aligner, using Channel 1, the exposure times given below are the same as the MJB-3 except they have been reduced by a factor of 2.4.

Resist Spin Cond. Bake Thickness Exposure Time PEB* Flood Exposure** Developer Developer Time Comments
AZ5214** 6 krpm/30” 95°C/60” ~ 1 um 2.1” 110°C/60” 30" AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated (undiluted) 400K Dev. Etches 5214
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 4.2” 110°C/60” AZ300MIF 60”
  • For Undercut
AZnLOF2035 2.5 krpm/30” 110°C/60” ~ 3.5 um 5.0” 110°C/60” AZ300MIF 70”
  • For Undercut
NR9-6000PY 3 krpm/30” 140°C/180” ~ um 13.1” 100°C/60” AZ300MIF 30”
  • Before litho, do Gasonics #3, 120"; Bake at 140 C, 5'
  • Spin-on HMDS 3krpm 30", prior to NR9-6000PY
*PEB: post-exposure bake. For AZ 5214-IR, this performs Image Reversal

** To use AZ5214 as a negative PR requires Flood Exposure with the MA6 or MJB aligner after PEB, before developing. See here for a basic AZ5214 process, it is different than typical negative resists.

SU-8 Recipes

Staff-developed recipes for SU-8:

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Contact_Alignment_Recipes&oldid=162295"