Dry Etching Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (fix ICP1 GaAs link)
(changed Oxford GaAs to R2 since we have no data, but there is a recipe on the tool.)
 
(83 intermediate revisions by 7 users not shown)
Line 1: Line 1:
===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
{{Recipe Table Explanation}}
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>

===Dry Etching Tools/Materials Table===
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
|-
! colspan="15" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
|- bgcolor="#d0e7ff"
|- bgcolor="#d0e7ff"
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]'''
|- bgcolor="#d0e7ff"
|<!-- INTENTIONALLY LEFT BLANK -->
! colspan="4" width="300" height="35" align="center" bgcolor="#d0e7ff" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="4" align="center" bgcolor="#d0e7ff" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="3" align="center" bgcolor="#d0e7ff" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
|- bgcolor="#d0e7ff"
|-
! width="65" align="center" bgcolor="#d0e7ff" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| width="65" bgcolor="#daf1ff" |[[RIE 1 (Custom)|RIE 1<br>(Retired)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| width="100" bgcolor="#daf1ff" |[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher SLR Fluorine ICP (PlasmaTherm)]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic 1)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic 2)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| width="85" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="95" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Ag
! bgcolor="#d0e7ff" align="center" |Ag
|
|
|
|
Line 42: Line 44:
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al
|
|
|[[RIE Etching Recipes|R2]]
|
|
|
|
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}}
|- bgcolor="#eeffff"
|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]]
! align="center" bgcolor="#d0e7ff" |Al
|
|
|
|
|
|
|[[RIE Etching Recipes|A]]
|
|
|
|
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 2)}}
|
|
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Au
|
|
|
|
Line 63: Line 69:
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Au
|
|
|
|
Line 72: Line 76:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Cr
|
|
|[[RIE Etching Recipes|R2]]
|
|
|
|
|{{rl|ICP Etching Recipes|Cr Etch (Panasonic 1)}}
|R1
|
|
|
|
Line 80: Line 90:
|
|
|
|
|[https://www.nanotech.ucsb.edu/wiki/index.php/Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29 A]
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Cr
|
|
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Cu
|
|
|A
|
|
|
|
|{{rl|ICP Etching Recipes|Cr Etch (Panasonic 1)}}
|A
|
|
|
|
Line 99: Line 106:
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Cu
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ge
|
|
|
|
|
|
|
|
|A
|R1
|
|
|
|
Line 112: Line 122:
|
|
|
|
|[[Other Dry Etching Recipes|R2]]
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Mo
|
|
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |Ge
|
|
|
|
Line 128: Line 140:
|
|
|
|
|R1
|-
!Nb
|
|
|
|
Line 133: Line 148:
|
|
|A
|A
|R1
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Mo
|
|
|
|
Line 143: Line 157:
|
|
|
|
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ni
|
|
|
|
Line 153: Line 169:
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |Ni
|
|
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|-
!Os
|
|
|
|
|
|
|
|
|A
|R1
|
|
|
|
Line 170: Line 189:
|
|
|
|
|- bgcolor="#eeffff"
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
! bgcolor="#d0e7ff" align="center" |Pt
|-
! align="center" bgcolor="#d0e7ff" |Pt
|
|
|
|
Line 186: Line 204:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|- bgcolor="#ffffff"
|
! bgcolor="#d0e7ff" align="center" |Ru
|{{rl|Other Dry Etching Recipes|Other Dry Etch (CAIBE (Oxford Ion Mill))}}
|-
! align="center" bgcolor="#d0e7ff" |Ru
|
|
|
|
|
|
Line 198: Line 212:
|
|
|A
|A
|{{Rl|ICP Etching Recipes|Ru (Ruthenium) Etch (Panasonic 2)}}
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]]
|
|
|
|
|
Line 207: Line 220:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Si
! bgcolor="#d0e7ff" align="center" |Si
|
|
|
|
|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R4]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
|
|
|
|
|R1
|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}}
|{{Rl|ICP Etching Recipes|Si Etching}}
|
|
|
|
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Ta
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (XeF2 Etcher)}}
|
|
|
|
|-
|A
|R1
! align="center" bgcolor="#d0e7ff" |Ta
|
|
|
|
Line 234: Line 252:
|
|
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ti
|
|
|
|
|
|
|
|
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}}
|R1
|
|
|
|
Line 243: Line 266:
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |Ti
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |W
|
|
|
|
|
|
|R2
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|R1
|
|
|{{rl|ICP Etching Recipes|Ti Etch (Panasonic 1)}}
|A
|
|
|
|
Line 259: Line 284:
|
|
|
|
|R1
|-
!TiW
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |Al<sub>2</sub>O<sub>3</sub>
|
|
|R2
|
|
|R1
|
|
|
|
Line 270: Line 298:
|
|
|
|
|[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R]
|
|
|
|
|
|
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
|
|
|
|
|
|
|
|
|A
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
|
|
|
|
Line 287: Line 316:
|
|
|
|
|R1
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}
|- bgcolor="#eeffff"
|A
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
|
|
|
|
|
|
|
|
|{{rl|ICP Etching Recipes|Sapphire Etch (Panasonic 1)}}
|R1
|
|
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |AlGaAs
|
|
|
|
|
|
|R1
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlGaAs
|
|
|[[RIE Etching Recipes|R3]]
|
|
|{{rl|ICP Etching Recipes|AlGaAs Etch (Panasonic 1)}}
|
|
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|AlGaAs Etch (Unaxis VLR)}}
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|
|
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]]
|
|
|
|
Line 315: Line 348:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |AlGaN
! bgcolor="#d0e7ff" align="center" |AlGaN
|
|
|
|
Line 323: Line 357:
|
|
|
|
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|
|
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |AlN
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |AlN
|
|
|
|
Line 343: Line 378:
|
|
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
|R1
|-
!BCB
|
|
|
|
|
|
|
|
|A
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |CdZnTe
|
|
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
|
|
|
|
Line 362: Line 397:
|
|
|
|
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |CdZnTe
|[[RIE Etching Recipes|R3]]
|
|
|
|
Line 369: Line 407:
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |GaAs
|
|
|
|
|
|
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
|
|
|
|
|R1
|{{rl|ICP Etching Recipes|GaAs-AlGaAs_Etch_.28Panasonic_1.29}}
|- bgcolor="#ffffff"
|{{rl|ICP Etching Recipes|GaAs Etch (Panasonic 2)}}
! bgcolor="#d0e7ff" align="center" |GaAs
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaAs-AlGaAs Etch (Unaxis VLR)|GaAs Etch (Unaxis VLR)}}
|
|
|[[RIE Etching Recipes|R4]]
|
|
|
|
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}}
|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R3]]
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R2]]
|
|
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |GaN
|
|
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |GaN
|
|
|{{rl|RIE Etching Recipes|GaN Etching (RIE 5)}}
|[[RIE Etching Recipes|R4]]
|
|
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}}
|R1
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R2]]
|
|
|{{rl|ICP Etching Recipes|GaN Etch (Unaxis VLR)}}
|
|
|
|
Line 403: Line 444:
|
|
|
|
|
|R1
|- bgcolor="#ffffff"
|
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |GaSb
! align="center" bgcolor="#d0e7ff" |GaSb
|
|
|
|
|
|
|
Line 415: Line 452:
|
|
|A
|A
|R1
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|GaSb Etch Unaxis VLR)}}
|
|R1
|
|
|
|
Line 423: Line 460:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |HfO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
|
|
|
|
Line 438: Line 476:
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InGaAlAs
|[[RIE Etching Recipes|R4]]
|
|
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |InGaAlAs
|
|
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|
|
|R1
|
|
|
|
Line 451: Line 491:
|
|
|
|
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |InGaAsP
|[[RIE Etching Recipes|R4]]
|
|
|
|
Line 458: Line 501:
|
|
|
|
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R3]]
|
|
|-
! align="center" bgcolor="#d0e7ff" |InGaAsP
|
|
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|
|
|
|
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |InP
|[[RIE Etching Recipes|R4]]
|
|
|
|
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|A
|R1
|[[ICP Etching Recipes#InP Ridge Etch .28Oxford ICP Etcher.29|R6]]
|
|
|
|
Line 477: Line 524:
|
|
|
|
|[[Other Dry Etching Recipes|R4]]
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |InP
! bgcolor="#d0e7ff" align="center" |ITO
|[[RIE Etching Recipes|R4]]
|
|
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|
|
|
|
|
|
|
|
|A
|A
|{{rl|ICP Etching Recipes|ICP-Etch (Unaxis VLR)|InP-InGaAs-InAlAs Etch (Unaxis VLR)|InP Etch (Unaxis VLR)}}
|
|
|
|
Line 495: Line 540:
|
|
|
|
|R1
|-
|-
!LiNbO3
! align="center" bgcolor="#d0e7ff" |ITO
|
|
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
|
|
|
|
Line 511: Line 556:
|
|
|
|
|R1
|- bgcolor="#ffffff"
!Photoresist & Organics
|
|
|[[RIE Etching Recipes|R3]]
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|- bgcolor="#eeffff"
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
!Photoresist
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
& ARC
|
|
|R3
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|A
|[https://www.nanotech.ucsb.edu/wiki/index.php/RIE_Etching_Recipes#Photoresist_and_ARC R]
|
|
|
|
|R1
|[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_Etching R]
|-
|[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 R]
!ARC (Anti Reflective Coating)
|
|
|A
|A
|
|
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |SiC
|
|
|
|
Line 540: Line 588:
|
|
|
|
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|A
|
|
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |SiC
|
|
|
|
|
|
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|R1
|
|
|
|
Line 550: Line 602:
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |SiN
|
|
|
|
|R1
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiN<sub>x</sub> Etching (RIE 3)}}
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiN
|
|
|
|
|
|
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]]
|
|A
|
|
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|
|
Line 568: Line 620:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |SiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
|
|
|
|
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiO<sub>2</sub> Etching (RIE 3)}}
|
|
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|
|A
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
|
|
|
|
Line 584: Line 635:
|
|
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
|[[Other Dry Etching Recipes|R4]]
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiOxNy
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |SiOxNy
|
|
|
|
|
|
|
|
|
|A
|A
|A
|R1
|
|
|
|
Line 603: Line 652:
|
|
|
|
|
|R1
|-
|-
!SU8
! align="center" bgcolor="#d0e7ff" |Ta<sub>2</sub>O<sub>5</sub>
|
|
|
|
|
|
|
|
|A
|
|
|
|
|
|
|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]
|
|
|
|
Line 620: Line 669:
|
|
|
|
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |TiN
|
|
|
|
|A
|R1
|
|
|
|
Line 633: Line 684:
|
|
|
|
|
|R1
|- bgcolor="#ffffff"
|
! bgcolor="#d0e7ff" align="center" |TiN
|
|
|
|
|
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |TiO<sub>2</sub>
|
|
|
|
|
|
|
Line 658: Line 700:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |W-TiW
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
|
|
|
|
Line 665: Line 708:
|
|
|
|
|
|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|A
|
|
|
|
Line 676: Line 716:
|
|
|
|
|R1
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |ZnO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
|
|
|
|
Line 691: Line 732:
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZnS
|[[RIE Etching Recipes|R3]]
|
|
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |ZnS
|
|
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
|
|
|
Line 706: Line 748:
|
|
|
|
|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnSe
|[[RIE Etching Recipes|R2]]
|
|
|
|
Line 712: Line 758:
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |ZnSe
|
|
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
|
|
|
Line 721: Line 764:
|
|
|
|
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
|
|
|
|
Line 730: Line 776:
|
|
|
|
|-
! align="center" bgcolor="#d0e7ff" |ZrO<sub>2</sub>
|
|
|
|
|
|
|
|
|
|R1
|- bgcolor="#eeffff"
|
! bgcolor="#d0e7ff" align="center" |'''Material'''
|
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
|
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
|
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
|
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
|
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
|
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
|
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
|
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
|
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
|
|-
! align="center" bgcolor="#d0e7ff" |'''Material'''
| bgcolor="#daf1ff" |[[RIE 1 (Custom)|RIE 1<br>(Retired)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|SLR Fluorine ICP (PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic E626I)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic E640)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
|}
|}


==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}
[[Category:Processing]]
[[Category:Processing]]

Latest revision as of 22:31, 4 October 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R4 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R2 R1
GaN R4 R1 R1 R2 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Dry_Etching_Recipes&oldid=162458"