Dry Etching Recipes: Difference between revisions
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===Dry Etching Tools/Materials Table=== |
===Dry Etching Tools/Materials Table=== |
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==== Process Maturity Ranking ==== |
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* <code>'''R6'''</code> - most mature process with regular calibrations recorded on SPC charts. |
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* … |
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* <code>'''R1'''</code> - least mature - only run once ever. |
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''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].'' |
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].'' |
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|[[RIE Etching Recipes| |
|[[RIE Etching Recipes|R2]] |
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|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|Al Etch (Panasonic 1)|R1}} |
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|[[ICP Etching Recipes#Al Etch .28Panasonic 2.29|R2]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#Al_Etch_.28Panasonic_2.29 R2] |
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! bgcolor="#d0e7ff" align="center" |Cr |
! bgcolor="#d0e7ff" align="center" |Cr |
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! bgcolor="#d0e7ff" align="center" |Mo |
! bgcolor="#d0e7ff" align="center" |Mo |
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!Nb |
!Nb |
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!Os |
!Os |
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! bgcolor="#d0e7ff" align="center" |Ru |
! bgcolor="#d0e7ff" align="center" |Ru |
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|A |
|A |
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|[ |
|[[ICP Etching Recipes#Ru .28Ruthenium.29 Etch .28Panasonic 2.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |Si |
! bgcolor="#d0e7ff" align="center" |Si |
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|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]] |
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|{{rl|ICP Etching Recipes|DSEIII_(PlasmaTherm/Deep_Silicon_Etcher)}} |
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|[[ICP Etching Recipes#Si |
|[[ICP Etching Recipes#Si Etch Recipes (Fluorine ICP Etcher)|R6]] |
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! bgcolor="#d0e7ff" align="center" |Ta |
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! bgcolor="#d0e7ff" align="center" |Ti |
! bgcolor="#d0e7ff" align="center" |Ti |
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! bgcolor="#d0e7ff" align="center" |W |
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|R3 |
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}} |
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|R1 |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub> |
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|A |
|A |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/w/index.php?title=ICP_Etching_Recipes#Al2O3_Etching_.28Panasonic_2.29 R3] |
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub> |
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! bgcolor="#d0e7ff" align="center" |AlGaAs |
! bgcolor="#d0e7ff" align="center" |AlGaAs |
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|[[RIE Etching Recipes|R3]] |
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! bgcolor="#d0e7ff" align="center" |AlGaN |
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! bgcolor="#d0e7ff" align="center" |CdZnTe |
! bgcolor="#d0e7ff" align="center" |CdZnTe |
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! bgcolor="#d0e7ff" align="center" |GaAs |
! bgcolor="#d0e7ff" align="center" |GaAs |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaAs-AlGaAs Etch (Panasonic 1)}} |
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|[[ICP Etching Recipes#GaAs Etch .28Panasonic 2.29|R6]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#GaAs_Etch_.28Panasonic_2.29 R3] |
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|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
|[[ICP Etching Recipes#GaAs Etch .28Oxford ICP Etcher.29|R3]] |
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! bgcolor="#d0e7ff" align="center" |GaN |
! bgcolor="#d0e7ff" align="center" |GaN |
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|[[RIE Etching Recipes|R3]] |
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|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|GaN Etch (Panasonic 1)}} |
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|R1 |
|R1 |
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|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29| |
|[[ICP Etching Recipes#GaN Etch .28Oxford ICP Etcher.29|R6]] |
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! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub> |
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub> |
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! bgcolor="#d0e7ff" align="center" |InGaAlAs |
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! bgcolor="#d0e7ff" align="center" |InGaAsP |
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! bgcolor="#d0e7ff" align="center" |InP |
! bgcolor="#d0e7ff" align="center" |InP |
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! bgcolor="#d0e7ff" align="center" |ITO |
! bgcolor="#d0e7ff" align="center" |ITO |
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!LiNbO3 |
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!Photoresist |
!Photoresist & Organics |
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& ARC |
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|[[RIE Etching Recipes|R3]] |
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|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R3] |
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|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]] |
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|R3 |
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]] |
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]] |
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!ARC (Anti Reflective Coating) |
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|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]] |
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|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_.26_ARC_.28Fluorine_ICP_Etcher.29 R4] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R] |
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|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_etching_.28Panasonic_2.29 R3] |
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|[[Oxygen Plasma System Recipes#O2 Ashing|R]] |
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|[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|R]] |
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|A |
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! bgcolor="#d0e7ff" align="center" |SiC |
! bgcolor="#d0e7ff" align="center" |SiC |
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! bgcolor="#d0e7ff" align="center" |SiN |
! bgcolor="#d0e7ff" align="center" |SiN |
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|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29| |
|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]] |
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|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}} |
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|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiNx_Etching_.28Panasonic_2.29 R3] |
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|[[Oxygen Plasma System Recipes#O2 Ashing|R3]] |
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! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub> |
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub> |
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|[[ICP Etching Recipes#SiO2 |
|[[ICP Etching Recipes#SiO2 Etch Recipes (Fluorine ICP Etcher)|R6]] |
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|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}} |
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}} |
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|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]] |
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|[https://wiki.nanofab.ucsb.edu/wiki/ICP_Etching_Recipes#SiO2_Etching_.28Panasonic_2.29 R6] |
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! bgcolor="#d0e7ff" align="center" |SiOxNy |
! bgcolor="#d0e7ff" align="center" |SiOxNy |
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|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 R1] |
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}} |
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! bgcolor="#d0e7ff" align="center" |ZnS |
! bgcolor="#d0e7ff" align="center" |ZnS |
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|[[RIE Etching Recipes|R3]] |
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! bgcolor="#d0e7ff" align="center" |ZnSe |
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|[[RIE Etching Recipes|R2]] |
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! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub> |
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! bgcolor="#d0e7ff" align="center" |'''Material''' |
! bgcolor="#d0e7ff" align="center" |'''Material''' |
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=== |
===Process Ranking Table=== |
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Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
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{| class="wikitable" |
{| class="wikitable" |
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|R1 |
|R1 |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran at least once |
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|- |
|- |
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|R2 |
|R2 |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran and procedure is documented |
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|- |
|- |
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|R3 |
|R3 |
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| colspan="11" |Process has been |
| colspan="11" |Process has been ran, procedure is documented, and data is available |
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|- |
|- |
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|R4 |
|R4 |
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| colspan="11" |Process has a documented procedure with regular |
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''no''' in-Situ control available |
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|- |
|- |
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|R5 |
|R5 |
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| colspan="11" |Process has a documented procedure with regular |
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' in-Situ control available |
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|- |
|- |
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|R6 |
|R6 |
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| colspan="11" |Process has a documented procedure |
| colspan="11" |Process has a documented procedure and control charts/limits available. Controlled process. |
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[[Category:Processing]] |
[[Category:Processing]] |
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Latest revision as of 20:00, 22 August 2025
Process Control Data
See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches
Dry Etching Tools/Materials Table
Process Maturity Ranking
R6- most mature process with regular calibrations recorded on SPC charts.- …
R1- least mature - only run once ever.
The Key/Legend for this table's A...R6 values is at the bottom of the page.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
| Process Level | Description of Process Level Ranking | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| A | Process Allowed and materials available but never done | ||||||||||
| R1 | Process has been ran at least once | ||||||||||
| R2 | Process has been ran and procedure is documented | ||||||||||
| R3 | Process has been ran, procedure is documented, and data is available | ||||||||||
| R4 | Process has a documented procedure with regular (≥4x per year) data no in-Situ control available | ||||||||||
| R5 | Process has a documented procedure with regular (≥4x per year) data and in-Situ control available | ||||||||||
| R6 | Process has a documented procedure and control charts/limits available. Controlled process. | ||||||||||