Sputtering Recipes: Difference between revisions
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! Material !! P(mT) !! Ar !! N2 !! O2 !! Height-Tilt !! Rate (nm/min) !! Stress (MPa) !! Resistivity (uOhm-cm) !! n @ 633nm !! k @ 633nm |
! Material !! P(mT) !! Pow (W) !! Sub Bias (W) !! Ar !! N2 !! O2 !! Height-Tilt !! Rate (nm/min) !! Stress (MPa) !! Resistivity (uOhm-cm) !! n @ 633nm !! k @ 633nm |
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| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
| InP|| HCl:H3PO4(1:3)|| ~1000 || Highly || InGaAs || High || [http://tel.archives-ouvertes.fr/docs/00/76/94/02/PDF/VA2_LAMPONI_MARCO_15032012.pdf Lamponi (p.102)] || Example || Jon Doe || Example |
Revision as of 20:29, 17 March 2014
Back to Vacuum Deposition Recipes.
Sputter 1 (Custom)
Sputter 2 (SFI Endeavor)
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)
Sputter 3 (AJA ATC 2000-F)
Sputter 3 Process Table
Material | P(mT) | Pow (W) | Sub Bias (W) | Ar | N2 | O2 | Height-Tilt | Rate (nm/min) | Stress (MPa) | Resistivity (uOhm-cm) | n @ 633nm | k @ 633nm |
---|---|---|---|---|---|---|---|---|---|---|---|---|
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example | |||
InP | HCl:H3PO4(1:3) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example | |||
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAs | High | Lamponi (p.102) | Example | Jon Doe | Example | |||
InP | H3PO4:HCl(3:1) | ~1000 | Highly | InGaAsP | High | Lamponi (p.102) | Example | Jon Doe | Example |
Ni and Ta Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
W Deposition (Sputter 4)
Sputter 5 (Lesker AXXIS)
Ion Beam Deposition (Veeco NEXUS)
IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
All users are required to enter their calibration deps (simple test deps only)
SiO2 deposition (IBD)
- Refractive Index: ≈1.485
- Rate: ≈6.1nm/min (users must calibrate this prior to critical deps)
- Stress ≈ -320MPa (compressive)
Si3N4 deposition (IBD)
- Refractive Index ≈ 2.01
- Rate ≈ 4.5nm/min (users must calibrate this prior to critical deps)
- Stress ≈ -1756MPa (compressive)
Ta2O5 deposition (IBD)
- Refractive Index ≈ 2.10
- Rate ≈7.8nm/min (users must calibrate this prior to critical deps)
- Stress ≈ -140MPa (compressive)
TiO2 deposition (IBD)
- Refractive Index ≈ 2.3-2.4
- Rate ≈ 1.8nm/min
- Recipe: TiO2_dep