Difference between revisions of "PECVD Recipes"
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=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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== SiN deposition (PECVD #1) == |
== SiN deposition (PECVD #1) == |
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− | *[[media:PECVD1-SiN- |
+ | *[[media:PECVD1-SiN-1000A Standard recipe.pdf|SiN Standard Recipe]] |
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]] |
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]] |
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*[[media:PECVD1 SIN 2-pt Thickness-index uniformity March 2014.pdf|SiN 2-pt thickness and index uniformity]] |
*[[media:PECVD1 SIN 2-pt Thickness-index uniformity March 2014.pdf|SiN 2-pt thickness and index uniformity]] |
Revision as of 08:54, 21 March 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)
- SiN 2-pt thickness and index uniformity
- SiN Thickness and Index uniformity
- SiN Data March 2014
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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