Dry Etching Recipes: Difference between revisions

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===<u>[[Process Group - Process Control Data#Etching .28Process Control Data.29|Process Control Data]]</u>===
{{Recipe Table Explanation}}
<small>''See above [[Process Group - Process Control Data#Etching .28Process Control Data.29|linked page]] for [https://en.wikipedia.org/wiki/Statistical_process_control process control data] (dep rate/stress etc. over time), for a selection of often-used dry etches''</small>

===Dry Etching Tools/Materials Table===
''The Key/Legend for this table's <code>A...R6</code> values is at the [[Dry Etching Recipes#Process Ranking Table|bottom of the page]].''
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
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! colspan="15" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
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|- bgcolor="#d0e7ff"
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
! colspan="18" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]'''
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|<!-- INTENTIONALLY LEFT BLANK -->
! colspan="4" width="300" height="35" align="center" bgcolor="#d0e7ff" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="5" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="5" align="center" bgcolor="#d0e7ff" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="3" align="center" bgcolor="#d0e7ff" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
! colspan="3" bgcolor="#d0e7ff" align="center" |'''[[Other Dry Etching Recipes|Other Dry Etchers]]'''
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! width="65" align="center" bgcolor="#d0e7ff" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| width="65" bgcolor="#daf1ff" |[[RIE 1 (Custom)|RIE 1<br>(Retired)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="65" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| width="100" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E646V)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| width="100" bgcolor="#daf1ff" |[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#PlasmaTherm.2FSLR_Fluorine_Etcher SLR Fluorine ICP (PlasmaTherm)]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic 1)]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| width="120" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic 2)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| width="85" bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="95" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| width="85" bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
| width="85" bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
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|[[ICP Etching Recipes#DSEIII .28PlasmaTherm.2FDeep Silicon Etcher.29|R6]]
|[[ICP Etching Recipes#Si Etching .28Fluorine ICP Etcher.29|R6]]
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|[[RIE Etching Recipes|R3]]
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|[https://wiki.nanotech.ucsb.edu/wiki/ICP_Etching_Recipes#Photoresist_and_ARC_Etching_.28Panasonic_1.29 R]
|[[ICP Etching Recipes#Al2O3 Etching .28Panasonic 2.29|R3]]
|
|
|R3
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|
|
|
|
|
|
|R1
|-
!ARC (Anti Reflective Coating)
|
|
|
|
|
|
|[[ICP Etching Recipes#Photoresist .26 ARC .28Fluorine ICP Etcher.29|R3]]
|
|
|A
|- bgcolor="#eeffff"
!Photoresist
& ARC
|
|
|
|
|A
|[https://www.nanotech.ucsb.edu/wiki/index.php/RIE_Etching_Recipes#Photoresist_and_ARC R]
|
|
|
|
|[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_Etching R]
|[https://www.nanotech.ucsb.edu/wiki/index.php/ICP_Etching_Recipes#Photoresist_and_ARC_etching_2 R]
|
|
|A
|A
|A
|
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|- bgcolor="#eeffff"
|A
! bgcolor="#d0e7ff" align="center" |SiC
|-
! align="center" bgcolor="#d0e7ff" |SiC
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|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiC Etch (Panasonic 1)}}
|A
|R1
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|R1
|- bgcolor="#ffffff"
|A
! bgcolor="#d0e7ff" align="center" |SiN
|-
! align="center" bgcolor="#d0e7ff" |SiN
|
|
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiN<sub>x</sub> Etching (RIE 3)}}
|
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|[[ICP Etching Recipes#Si3N4 Etching .28Fluorine ICP Etcher.29|R3]]
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiNx Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiNx Etching .28Panasonic 2.29|R3]]
|
|
|[[Oxygen Plasma System Recipes#O2 Ashing|R3]]
|A
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|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |SiO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |SiO<sub>2</sub>
|
|
|
|
|{{rl|RIE Etching Recipes|RIE 3 (MRC)|SiO<sub>2</sub> Etching (RIE 3)}}
|
|
|[[ICP Etching Recipes#SiO2 Etching .28Fluorine ICP Etcher.29|R6]]
|
|A
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 1)}}
|{{rl|ICP Etching Recipes|SiO2 Etching (Panasonic 2)}}
|[[ICP Etching Recipes#SiO2 Etching .28Panasonic 2.29|R6]]
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|[[Other Dry Etching Recipes|R4]]
|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |SiOxNy
|
|
|{{rl|Other Dry Etching Recipes|Other Dry Etch (Vapor HF Etcher)}}
|A
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |SiOxNy
|
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|A
|R1
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|A
|A
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|R1
|-
!SU8
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|A
|A
|-
! align="center" bgcolor="#d0e7ff" |Ta<sub>2</sub>O<sub>5</sub>
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|[https://www.osapublishing.org/optica/abstract.cfm?uri=optica-4-5-532 A]
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|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |Ta<sub>2</sub>O<sub>5</sub>
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|A
|A
|-
|R1
! align="center" bgcolor="#d0e7ff" |TiN
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|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |TiN
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|A
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |TiO<sub>2</sub>
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|R1
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|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |W-TiW
! bgcolor="#d0e7ff" align="center" |TiO<sub>2</sub>
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|{{rl|ICP Etching Recipes|W-TiW Etch (Panasonic 1)}}
|A
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|R1
|A
|- bgcolor="#eeffff"
|- bgcolor="#eeffff"
! align="center" bgcolor="#d0e7ff" |ZnO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |ZnO<sub>2</sub>
|
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|R1
|- bgcolor="#ffffff"
! bgcolor="#d0e7ff" align="center" |ZnS
|[[RIE Etching Recipes|R3]]
|
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|
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|A
|-
! align="center" bgcolor="#d0e7ff" |ZnS
|
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|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
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|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |ZnSe
|[[RIE Etching Recipes|R2]]
|
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|A
|-
! align="center" bgcolor="#d0e7ff" |ZnSe
|
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|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|
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|R1
|- bgcolor="#ffffff"
|
! bgcolor="#d0e7ff" align="center" |ZrO<sub>2</sub>
|
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|A
|-
! align="center" bgcolor="#d0e7ff" |ZrO<sub>2</sub>
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|R1
|- bgcolor="#eeffff"
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#PlasmaTherm.2FSLR Fluorine Etcher|Fluorine ICP <span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 1 .28Panasonic E646V.29|ICP Etch 1<br><span style="font-size: 88%;">(Panasonic E626I)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#ICP Etch 2 .28Panasonic E626I.29|ICP Etch 2<br><span style="font-size: 88%;">(Panasonic E640)</span>]]
| bgcolor="#daf1ff" |[[ICP Etching Recipes#Oxford ICP Etcher .28PlasmaPro 100 Cobra.29|Oxford ICP <span style="font-size: 88%;">(PlasmaPro 100)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br><span style="font-size: 88%;">(Technics PEII)</span>]]
| bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean <span style="font-size: 88%;">(YES EcoClean)</span>]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br><span style="font-size: 88%;">(EVG 810)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br><span style="font-size: 88%;">(Xetch)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br><span style="font-size: 88%;">(uETCH)</span>]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br><span style="font-size: 88%;">(Oxford)</span>]]
|}

==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|-
|R1
! align="center" bgcolor="#d0e7ff" |'''Material'''
| colspan="11" |Process has been run at least once
| bgcolor="#daf1ff" |[[RIE 1 (Custom)|RIE 1<br>(Retired)]]
|-
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> (MRC)]]
|R2
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> (MRC)]]
| colspan="11" |Process has been run and/or procedure is documented or/and data available
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br>(PlasmaTherm)]]
|-
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br>(PlasmaTherm)]]
|R3
| bgcolor="#daf1ff" |[[Fluorine ICP Etcher (PlasmaTherm/SLR Fluorine ICP)|SLR Fluorine ICP (PlasmaTherm)]]
| colspan="11" |Process has been run, procedure is documented, and data is available
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_1_.28Panasonic_E626I.29|ICP Etch 1<br>(Panasonic E626I)]]
|-
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP_Etch_2_.28Panasonic_E640.29|ICP Etch 2<br>(Panasonic E640)]]
|R4
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#ICP-Etch_.28Unaxis_VLR.29|ICP-Etch<br>(Unaxis VLR)]]
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Ashers_.28Technics_PEII.29|Ashers<br>(Technics PEII)]]
|-
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Clean_.28Gasonics_2000.29|Plasma Clean<br>(Gasonics 2000)]]
|R5
| width="95" bgcolor="#daf1ff" |[[Oxygen Plasma System Recipes#Plasma Clean .28YES EcoClean.29|Plasma Clean (YES EcoClean)]]
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#UV_Ozone_Reactor|UV Ozone Reactor]]
|-
| bgcolor="#daf1ff" |[[Oxygen_Plasma_System_Recipes#Plasma_Activation_.28EVG_810.29|Plasma Activation<br>(EVG 810)]]
|R6
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#XeF2_Etch_.28Xetch.29|XeF2 Etch<br>(Xetch)]]
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#Vapor_HF_Etch_.28uETCH.29|Vapor HF Etch<br>(uETCH)]]
| bgcolor="#daf1ff" |[[Other_Dry_Etching_Recipes#CAIBE_.28Oxford_Ion_Mill.29|CAIBE<br>(Oxford)]]
|}
|}

[[Category:Processing]]
[[Category:Processing]]

Latest revision as of 00:41, 22 October 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V)
ICP Etch 2
(Panasonic E626I)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)
Ag R1
Al R2 R1 R2 R1
Au R4
Cr R2 R1 R1 R1
Cu R1
Ge A R1 R2 R1
Mo R1
Nb A R1
Ni R4
Os A R1
Pt R4
Ru A R3 R1
Si R6 R6 R1 R4 R1
Ta A R1 R1
Ti R1 R1 R1
W R2 R1 R1 R1
TiW R2 R1
Al2O3 A R3 R1
Al2O3 (Sapphire) R1 R1 R1
AlGaAs R3 R1 R3 R1
AlGaN R2 R1
AlN R1
BCB A
CdZnTe R3 R1
GaAs R4 R1 R3 R2 R1
GaN R4 R1 R1 R3 R1
GaSb A R1 R1 R1
HfO2 R1
InGaAlAs R4 R1 R1
InGaAsP R4 R3 R1
InP R4 A R1 R6 R4
ITO R4 R1
LiNbO3 R1
Photoresist & Organics R3 R3 R R3 R3 R3 R3 R1
ARC (Anti Reflective Coating) R3
SiC R1 R1 R1
SiN R3 R1 R3 R3 R1
SiO2 R6 R1 R6 R4 R1
SiOxNy A R1 R1
SU8 A
Ta2O5 A R1 R1
TiN R1
TiO2 R1
ZnO2 R1
ZnS R3 R1
ZnSe R2 R1
ZrO2 R1
Material RIE 2
(MRC)
RIE 5
(PlasmaTherm)
DSEIII
(PlasmaTherm)
Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I)
ICP Etch 2
(Panasonic E640)
Oxford ICP (PlasmaPro 100) Ashers
(Technics PEII)
Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810)
XeF2 Etch
(Xetch)
Vapor HF Etch
(uETCH)
CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available