PECVD 2 (Advanced Vacuum): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=PECVD2.jpg
|picture=PECVD2.jpg
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Brian Lingg
|super= Michael Barreraz
|super2= Don Freeborn
|phone=(805)839-3918x219
|phone=(805)839-7975
|location=Bay 2
|location=Bay 2
|email=silva@ece.ucsb.edu
|email=silva@ece.ucsb.edu
|description = Vision 310 Advanced Vacuum PECVD
|description = Vision 310 Advanced Vacuum PECVD
|manufacturer = Veeco
|manufacturer = Plasma-Therm
|materials =
|materials =
|toolid=15
|toolid=15
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==About==
==About==


This open-load system is dedicated to PECVD of SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases. The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run. Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C. The system is equipped with a dual generator, dual frequency option for growth of low-stress Nitride films.
*'''Films/Gases''': This open-load system is dedicated to PECVD of '''SiO<sub>2</sub>, SiN<sub>x</sub>, SiO<sub>x</sub>N<sub>y</sub>, and a-Si''' using Silane (2%SiH<sub>4</sub>, 98% He), N<sub>2</sub>O, NH<sub>3</sub>, and N<sub>2</sub> gases.
*'''Size''': The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.

*'''Temperature''': Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
== Recipes ==
*'''Low-Stress Si<sub>3</sub>N<sub>4</sub>''': The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.

**These films alternate between thin (<10nm) compressive and tensile layers.
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* Recipes for SiO2, Si3N4 and Low-Stress Si3N4 can be found on the PECVD Recipes Page:
**The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > [[PECVD Recipes#Historical Data 5|Low-Stress Nitride]].
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** [[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''PECVD 2 - Advanced Vacuum''']]
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* A list of all available deposited films can be found on the Vacuum Deposition Recipes page:
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** [[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]


==See Also==
==See Also==
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*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]
*[http://www.advanced-vacuum.se/Ny-sida-8.html Vision 310 Product Page]


== Documentation ==
==Documentation==

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* [[Operating Instructions for Adv. PECVD II]]
*[https://wiki.nanotech.ucsb.edu/w/images/2/2c/SOP_for_Advanced_Vacuum_PECVD.pdf Operating Instructions]
* [[Wafer Coating Process Traveler]]
*[[Wafer Coating Process Traveler]]
* For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]
*For particle counting method, see the [[Wafer scanning process traveler|Surfscan Scanning Procedure]]

==Recipes & Historical Data==

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*Recipes can be found on the PECVD Recipes Page:
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**[[PECVD Recipes#PECVD 2 .28Advanced Vacuum.29|Recipes > Vacuum Deposition Recipes > PECVD Recipes > '''<u>PECVD 2 - Advanced Vacuum</u>''']]
**Thin-Films recorded: SiO2, Si3N4 and Low-Stress Si3N4

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*A list of ''all available'' deposited films can be found on the Vacuum Deposition Recipes page:
⚫
**[[Vacuum Deposition Recipes|Recipes > Vacuum Deposition Recipes]]

===Process Control Data===

*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD#2: Plots of all data]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 PECVD#2: SiO<sub>2</sub>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 PECVD#2: Si<sub>3</sub>N<sub>4</sub>]
*[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 PECVD#2: Low-Stress Si<sub>3</sub>N<sub>4</sub>]
**[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Data]

Latest revision as of 20:09, 26 November 2024

PECVD 2 (Advanced Vacuum)
PECVD2.jpg
Location Bay 2
Tool Type Vacuum Deposition
Manufacturer Plasma-Therm
Description Vision 310 Advanced Vacuum PECVD
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Don Freeborn

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


About

  • Films/Gases: This open-load system is dedicated to PECVD of SiO2, SiNx, SiOxNy, and a-Si using Silane (2%SiH4, 98% He), N2O, NH3, and N2 gases.
  • Size: The sample electrode has a 270mm diameter useable area, allowing for multiple 4” wafer depositions in a single run.
  • Temperature: Standard operating temperature is 300C, but can be user changed for temps ranging anywhere from 250 to 350C.
  • Low-Stress Si3N4: The system is equipped with a dual generator, dual frequency option for growth of Low-stress Nitride films.
    • These films alternate between thin (<10nm) compressive and tensile layers.
    • The Low-Stress Si3N4 film recipe are tested approx. monthly, and kept within ±100MPa. Data can be found at Recipes (below) > Low-Stress Nitride.

See Also

Documentation

Recipes & Historical Data

Process Control Data

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