Automated Wafer Cleaver (Loomis LSD-155LT): Difference between revisions
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==About== |
==About== |
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The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers. |
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TBD: Insert info general here. |
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==Detailed Specifications== |
==Detailed Specifications== |
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*Maximum Wafer Size: |
*Maximum Wafer Size: 4" |
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*Parts mounted to |
*Parts mounted to low tack tape and used in conjunction with 6" plastic rings. |
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*Automated cut maps at multiple angles (0° and 90° typical) |
*Automated cut maps at multiple angles (0° and 90° typical) |
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*~few micron alignment to on-wafer features. |
*~few micron alignment to on-wafer features. |
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*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'. |
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* TBD |
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*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1. |
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**Thinning the substrate allows for much easier cleaving and cleave lines closer together. |
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==Operating Procedures== |
==Operating Procedures== |
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*[https://wiki. |
*[https://wiki.nanofab.ucsb.edu/w/images/d/d6/Loomis_Scriber_SOP.docx Loomis LSD-155LT Standard Operating Procedure] |
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==Recipes== |
==Recipes== |
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*Recipes > Packaging > '''Wafer Cleaver Recipes (LSD-155LT)''' |
*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]''' |
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* |
*Wafer thinning is critical, see the [[Mechanical Polisher (Allied)|Wafer Lapping (Allied 10-1110)]] tool as well. |
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Latest revision as of 00:24, 4 September 2024
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About
The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.
Detailed Specifications
- Maximum Wafer Size: 4"
- Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
- Automated cut maps at multiple angles (0° and 90° typical)
- ~few micron alignment to on-wafer features.
- Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
- Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.
- Thinning the substrate allows for much easier cleaving and cleave lines closer together.
Operating Procedures
Recipes
- Recipes > Packaging > Wafer Cleaver Recipes (LSD-155LT)
- Wafer thinning is critical, see the Wafer Lapping (Allied 10-1110) tool as well.