E-Beam 4 (CHA): Difference between revisions

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== About ==
== About ==
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls. The system also an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions. The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr. This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.
This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.


== Detailed Specifications ==
== Detailed Specifications ==
*Temescal 10kV power supply
*Temescal 10kV power supply
*1-Temescal 8-pocket series 260 e-beam sources
*1-Temescal 8-pocket series, 260 e-beam sources
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Cryo-pumped system with ~ 5e-7 ultimate base pressure
*Rotation with baffle for 5% uniformity over 4” wafer
*Rotation with baffle for 5% uniformity over 4” wafer
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*Inficon IC/5 programmable crystal thickness monitoring system
*Inficon IC/5 programmable crystal thickness monitoring system
*Automatic deposition of multiple layer stacks
*Automatic deposition of multiple layer stacks
*Sample size:
*Sample size: Pieces or up to 10-4” wafers for lift-off and 24-4” wafers for sidewall coverage
**Pieces or
**9x 4” wafers for lift-off (normal incidence)
**24x 4” wafers for sidewall coverage (planetary)
**4x 6-inch wafers for normal incidence
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr
*Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr


Latest revision as of 16:57, 15 September 2025

E-Beam 4 (CHA)
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer CHA Industries
Model SEC-600-RAP
Description Multi-Wafer Evaporator
Primary Supervisor Michael Barreraz
(805) 893-4147
mikebarreraz@ece.ucsb.edu

Secondary Supervisor

Bill Millerski

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


EBeam4's controls

About

This electron-beam evaporation system is a bell-jar type system and has the capability to do up to 9-4” wafers in a lift-off configuration and up to 18-4” wafers in a sidewall coverage configuration. Rotational motion in combination with baffling is used for lift-off and provides roughly 5% uniformity across a 4” wafer. The system has an 8-pocket e-beam source and an Inficon IC/5 deposition controller that allows for programming of fully automated multiple layer depositions.

The sidewall coverage fixturing uses full planetary motion to provide coverage over all sidewalls.

The metals available for deposition are Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe and Cr.

This system is used for n-type ohmic contact metalization to compound semiconductors, Schottky contacts to semiconductors, bond pads, and other general metalizations. The maximum deposition thickness during a run is limited to 1.0 microns.

Detailed Specifications

  • Temescal 10kV power supply
  • 1-Temescal 8-pocket series, 260 e-beam sources
  • Cryo-pumped system with ~ 5e-7 ultimate base pressure
  • Rotation with baffle for 5% uniformity over 4” wafer
  • Automatic vacuum sequencing
  • Temescal e-beam sweep control
  • Inficon IC/5 programmable crystal thickness monitoring system
  • Automatic deposition of multiple layer stacks
  • Sample size:
    • Pieces or
    • 9x 4” wafers for lift-off (normal incidence)
    • 24x 4” wafers for sidewall coverage (planetary)
    • 4x 6-inch wafers for normal incidence
  • Metals: Al, Ti, Au, Pt, Ni, Pd, Ag, Ge, Fe, NiCr, NiFe, Cr

Documentation

Recipes

Materials Table

For tables listing all available materials and deposition parameters, please visit the E-Beam Recipe Page.

Process Control Data

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