Sputtering Recipes: Difference between revisions

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{{recipes|Vacuum Deposition}}
{{recipes|Vacuum Deposition}}
{{rl|Atomic Layer Deposition Recipes|Pt deposition (ALD)}}
=[[Sputter 1 (Custom)]]=

=[[Sputter 2 (SFI Endeavor)]]=
=[[Sputter 3 (AJA ATC 2000-F)]]=
==[[Sputter 3 (AJA ATC 2000-F)]]==

=[[Sputter 4 (AJA ATC 2200-V)]]=
Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=20 SignupMonkey Page] for a list of currently installed targets.
=[[Sputter 5 (Lesker AXXIS)]]=

===Tips & Tricks===

====Ignition Issues====
It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.

===Materials Table (Sputter 3)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm
!Target Consumed Lower Limit!!Data Below!!Comment
|-
|Au
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
| -
|Set: 200 W
Read: 400 VDC
|no
|
|-
|Al2O3
|3
|200 (RF2)
|off
|20
|30
|
|1.5
|1.52"-4mm
|5.32
|
|
|1.6478
|0
|
|no
|Demis D. John
|-
|Co||10(5)||200||0||20||25||0||0||25-9||2.3||-||-||-||-
| ||yes||Alex K
|-
|Cr||5||200||0||20||25||0||0||44-4||6.84||-||-||-||-
| ||no||Brian
|-
|Cu||1.5||50(395v)||0||20||25||0||0||25-9||4.15||-||-||-||-
| ||no||Ning
|-
|Cu||5||150(~490v)||0||20||15||0||0||0.82"-9||8||-||-||-||-
| ||yes||Ning
|-
|Fe||10(5)||200||0||20||25||0||0||25-9||1.25||-||-||-||-
| ||No||Alex K
|-
|Mo||3||200||0||20||25||0||0||44-4||13.15||-||-||-||-
| ||yes||Ning
|-
|Ni||5||150||0||20||25||0||0||44-4||5.23||-||-||-||-
| ||yes||Ning
|-
|Ni||5||150||0||20||25||0||0||25-9||1.82||-||-||-||-
| ||yes||Ning
|-
|Ni||5||75||0||20||25||0||0||44-4||2.50||-||-||-||-
| ||yes||Ning
|-
|Ni||3||200||0||20||25||0||0||44-4||9.4||-||-||-||-
| ||yes||Ning
|-
|Ni||1.5||50(399v)||0||20||25||0||0||25-9||0.96||-||-||-||-
| ||no||Ning
|-
|Pt||3||50||0||20||25||0||0||0.82"-9||2.9||-||-||-||-
| ||no||Ning
|-
|Si||8||250||0||25||25||0||0||15-3||1.4||-||-||-||-
| ||no||Gerhard - ramp 2W/s - 3% Unif 4" wafer
|-
|SiN||3||200||10||20||25||3||0||25-9||1.56||-||-||1.992||-
| ||yes||Brian
|-
|SiN||3||250||10||20||25||2.5||0||25-9||2.1||-||-||2.06||-
| ||yes||Brian
|-
|SiO2||3||200||10||20||25||0||3||25-9||3.68||-||-||1.447||-
| ||yes||Brian
|-
|SiO2||3||200||10||20||25||0||5||45-3||2.60||-||-||1.471||-
| ||yes||Brian
|-
|SiO2||3||250||10||20||25||0||2.5||25-9||4.3||-||-||1.485||-
| ||yes||Brian
|-
|Ta||5||150||0||20||25||0||0||44-4||9.47||-||-||-||-
| ||yes||Ning
|-
|Ta||5||75||0||20||25||0||0||44-4||5.03||-||-||-||-
| ||yes||Ning
|-
|Ti||3||100||0||20||25||0||0||25-9||1.34||-||-||-||-
| ||yes||Ning
|-
|SampleClean-NativeSiO2||10||0||18||20||25||0||0||44-4||-||-||-||-||-
| ||yes||150Volts 5 min
|-
|}

===Height Conversion for Older Recipes===
Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:
{| class="wikitable"
!Old (mm)
!New (inches)
!Typical Gun Tilt (mm)
|-
|15
|
|
|-
|25
|0.82
|9
|-
|44
|1.52
|4
|}
Interpolation plot [[:File:Sputter 3 - height conversion v1.PNG|can be found here.]]

===Fe and Co Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/15/Fe_and_Co_Films_using_Sputter-3.pdf Fe and Co Deposition Recipe]

===Cu Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/5/5e/Cu_Film_using_Sputter-3.pdf Cu Deposition Recipe]

===Mo Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/7/7f/46-Mo_Film_using_Sputter3.pdf Mo Deposition Recipe]

===Ni and Ta Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/b/b6/24-Ni_and_Ta_Films_using_Sputter-3.pdf Ni and Ta Deposition Recipe]
*[//wiki.nanotech.ucsb.edu/wiki/images/9/93/Ni_Sputtering_Film_using_Sputter_3-a.pdf Ni Sputtering Film Recipe-3mT-200W]

===SiO2 Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/e/ef/SiO2-AJA-1-Reactive-Sputter-Uniformity-rev-1.pdf SiO2 Uniformity Data]
*[//wiki.nanotech.ucsb.edu/wiki/images/b/b2/SiO2-AJA-1-Reactive-Sputter-Power-Flow-AFM-Roughness-rev1.pdf SiO2 Flow and Bias Variations Including AFM Data]

===SiN Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/f/fb/SiN-AJA-1-Reactive-Sputtering-Power-Flow-AFM-Rate-Index-rev1.pdf SiN Flow and RF Variations Including AFM Data]

===Ti Deposition (Sputter 3)===

*[//wiki.nanotech.ucsb.edu/wiki/images/3/3b/Ti_Sputtering_Film_using_Sputter_3.pdf Ti Sputtering Film Recipe-3mT-100W]

==[[Sputter 4 (AJA ATC 2200-V)]]==

Please see [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=21 the SignupMonkey page] for a list of currently installed targets.

===Materials Table (Sputter 4)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)
!Power Source!!Pow(W)!!Sub(W)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!n@633nm!!k@633nm!!Data Below!!Comment
|-
|Al||5
| ||200||0||20||45||0||0||H2.75-T5||4.4||-||-||-||-||Yes||Ning Cao
|-
|Al2O3
|3
|RF4-Sw1
|200
|0
|20
|30
|0
|1.5
|H2.75-T5
|5.1
|
|
|1.64202
|0
|partial
|Demis D. John
|-
|Au||5
| ||200||0||20||45||0||0||H1-T10||17.7||-||-||-||-||Yes||Ning Cao
|-
|Au||10
| ||200||0||20||45||0||0||H2.75-T5||35.5||-||-||-||-||Yes||Demis: 200W rate (Max for Au) 2022-08-03
|-
|Cu
|5
|
|150
|0
|20
|30
|0
|0
|H0.82-T9
|6.7
|
|
|
|
|No (SEM available)
|Ning Cao
|-
|Nb||4
| ||250||0||20||30||0||0||H2.00-T7||7.5||-||-||-||-||No||
|-
|Pt||5
| ||200||0||20||45||0||0||H2.75-T5||7.4||-||-||-||-||Yes||Ning Cao
|-
|Pt||3
| ||50(439V)||0||20||45||0||0||H2.75-T5||3.9||-||-||-||-||Yes||Ning Cao
|-
|Ru
|3
|
|200
|
|
|45
|
|
|H2.75-T4
|~10
|
|
|
|
|Yes
|Ning Cao
|-
|Ti||10
| ||200||0||20||45||0||0||H2.75-T5||2.3||-||-||-||-||Yes||Ning Cao
|-
|TiN||3
| ||150||110V||20||48.25||1.75||0||H2.5-T5||2||-||60||-||-||No||
|-
|TiO<sub>2</sub>||3
| ||250(RF:450V)||0||20||45||0||3||H2.75-T5||4.3||-|| ||-||-||Yes||Ning Cao
|-
|TiW||4.5
| ||200||0||20||45||0||0||H1-T10||4.7||-||-||-||-||Yes||Ning Cao
|-
|TiW||4.5
| ||300||0||75||45||0||0||H2.75-T5||9.5||-150 to 150||60||-||-||Yes||10%Ti by Wt
|-
|W||3
| ||300||0||50||45||0||0||H2.75-T5||11.5||-150 to 150||11||-||-||Yes||Jeremy Watcher
|-

|}

===Au Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/0/01/Au-Sputter4-5mT-200W-120s.pdf Au Film's AFM Step and Roughness]

===Al Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/17/Al-Sputter4-5mT-200W-30m.pdf Al Film SEM Profile]

===Al2O3 Deposition (Sputter 4)===

*Rate: 5.134 nm/min
*[https://en.wikipedia.org/wiki/Cauchy%27s_equation Cauchy] Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
**A = 1.626
**B = 5.980E-3
**C = 1.622E-4

===Pt Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/a/ab/Pt-Sputter4.pdf Pt Film's AFM Step and Roughness]

===Ru Deposition (Sputter 4)===

*[https://wiki.nanotech.ucsb.edu/w/images/f/f6/SiO2_Etch%2C_Ru_HardMask_-_Fluorine_ICP_Etch_Process_-_Ning_Cao_2019-06.pdf Ruthenium Hardmask for SiO2 Etching - Full Process Traveler] by Ning Cao
**Deposition Rate ~10nm/min
**See [[ICP Etching Recipes#SiO2 Etching|Fluorine-ICP > SiO2 Etching]] page for more info.

===Ti-Au Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/8/89/Ti-Au-Sputtering-Films-AJA2-rev1.pdf Ti-Au Deposition Recipe and SEM Cross-Sections]

===TiO<sub>2</sub> Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/1/19/TiO2_film_using_Sputter4.pdf TiO<sub>2</sub> Film's Refractive Index Spectrum, Resistivity, AFM Roughness]

===TiW Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/7/78/TiW-Sputter4-4.5mT-300W-300s.pdf TiW Film's AFM Step and Roughness]

===W-TiW Deposition (Sputter 4)===

*[//wiki.nanotech.ucsb.edu/wiki/images/c/cc/W-TiW-Sputtering-AJA-4-Data-Recipe-RevB.pdf W-TiW Deposition Recipe]

==[[Sputter 5 (AJA ATC 2200-V)]]==

Please see the [https://signupmonkey.ece.ucsb.edu/cgi-bin/users/browse.cgi?tool_ID=60 SignupMonkey] page for a list of currently installed targets.

===Materials Table (Sputter 5)===
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
{| class="wikitable sortable"
|-
!Material!!P(mT)
!Power Source!!Pow(W)!!Sub(V)!!T(C)!!Ar!!N2!!O2!!Height-Tilt(mm)!!Rate(nm/min)!!Stress(MPa)!!Rs(uOhm-cm)!!Rq(nm)!!n@633nm!!k@633nm!!LPDb/LPDa*!!Data Below!!Comment
|-
|Al
|5
|
|250
|0
|20
|45
|0
|0
|H1-T10
|2.5
|22
|
|
|
|
|
|No (SEM available)
|Ning
|-
|Al2O3
|1.5
|DC5-SW1
|150
| -
| -
|45
| -
|5
|H2.75-T5
|5.3
|?
|?
|?
|1.641
| -
|?
|No
|Demis 2018-04-13
|-
|Cr
|5.0
|RF
|200
|~345
|20
|45
|
|
|H2.75-T5
|4.47
|
|
|
|
|
|
|No
|BT 2024-07-02
|-
|Pt
|3.0
|
|200(507v)
| -
| -
|45
| -
| -
|H1-T10
|7.03
|?
|?
|?
|2.068
|4.951
|?
|No
|Ning 2021-09-27
|-
|SiO2||3
| ||250||120||20||45||0||2||H1.0-T10||2.32|| ||-||-||1.49||-||153/6384||No||Biljana
|-
|SiO2||3
| ||250||120||20||45||0||4.5||H1.0-T10||2.29||-515||-||0.210||1.49|| ||138/4445||No ( AFM available)||Biljana
|-
|SiO2||3
| ||250||120||20||45||0||6||H1.0-T10||2.32|| ||-||-||1.49||-||27/1515||Yes||Biljana
|-
|Ti
|3.0
|
|200(374v)
| -
| -
|45
| -
| -
|H1-T10
|2.52
|?
|?
|?
|2.679
|1.853
|?
|No
|Ning 2021-09-27
|}
''*LPD: light particle detection:''

*''LPDb: light particle detection before deposition''
*''LPDa: light particle detection after deposition''

===SiO2 Deposition (Sputter 5)===

*[https://docs.google.com/spreadsheets/d/1kzrbXdUJNf_-FjLJd-PTrbGDhGCKNNxo_JaOXkSpAF8/edit#gid=Sputter#5 SiO2 film]

=[[Ion Beam Deposition (Veeco NEXUS)]]=
=[[Ion Beam Deposition (Veeco NEXUS)]]=
''Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.''
[https://docs.google.com/spreadsheet/ccc?key=0AuBs1GfMrpnXcEdXanZQNko3X0lUcHhVUlNyYnVDUkE&usp=sharing IBD Calibrations Spreadsheet] - Records of historical film depositions (rates, indices), Uniformity etc.

*[[IBD: Calibrating Optical Thickness|Method to calibrate multi-layer optical films]]: For example, for calibrating and depositing Multi-layer DBR gratings, Anti-Reflection coatings etc.

===[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=2030038046 IBD Process Control Plots] - ''Plots of all process control data.''===

==SiO<sub>2</sub> deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/8/8d/New_IBD_SiO2_Standard_Recipe.pdf SiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_SiO2_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=0 SiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28IBD.29 SiO<sub>2</sub><nowiki> [IBD] Historical Data</nowiki>] - Before Oct. 2021

====SiO<sub>2</sub> Thin-Film Properties (IBD)====

*Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate ~350 nm/min
*Stress ≈ -390MPa (compressive)
*Refractive Index: ≈ 1.494
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 1.480
**B = 0.00498
**C = -3.2606e-5

====SiO<sub>2</sub> Uniformity====
''Measured in June 2010 (Demis D. John)''
{| class="wikitable"
|+Uniformity Statistics
!
!Thickness (nm)
!Refractive Index
(at 632nm)
|-
|Mean (Avg.), nm
|1677.80
|1.480
|-
|Min
|1671.09
|1.479
|-
|Max
|1688.9
|1.482
|-
|Std. Deviation (nm)
|5.99
|8.6e-4
|}
[[File:IBD - Deposition Uniformity across a 6-inch wafer 2010-06-15 v2.png|alt=Plot of SiO2 thickness and refractive index|none|thumb|Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. ''Credit: Demis D. John, 2010-06-15'']]
<br />
==Si<sub>3</sub>N<sub>4</sub> deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/d/d3/IBD_SiNdeposition.pdf Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Si3N4_Dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=971672318 Si<sub>3</sub>N<sub>4</sub><nowiki> [IBD] Process Control Data</nowiki>]

===Si<sub>3</sub>N<sub>4</sub> Thin-Film Properties (IBD)===

*Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate: ~11nm/min
*Stress ≈ -1590MPa (compressive)
*Refractive Index: ≈ 1.969
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.000
**B = 0.01974
**C = 1.2478e-4

==Ta<sub>2</sub>O<sub>5</sub> deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/8/85/IBD_Ta2O5_deposition_details.pdf Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_Ta2O5_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=855566098 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Process Control Data</nowiki>]
*[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Ta2O5_deposition_.28IBD.29 Ta<sub>2</sub>O<sub>5</sub><nowiki> [IBD] Historical Data</nowiki>] - before Oct. 2021

====Ta2O5 Thin-Film Properies (IBD)====

*Ta2O5 1hr depositions:
*Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
*HF Etch Rate ≈ 2 nm/min
*Stress ≈ -232MPa (compressive)
*Refractive Index: ≈ 2.172
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.1123
**B = 0.018901
**C = -0.016222

==Al<sub>2</sub>O<sub>3</sub> deposition (IBD)==

*Al<sub>2</sub>O<sub>3</sub> [IBD] Standard Recipe - "''1_Al2O3_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=713133870 Al<sub>2</sub>O<sub>3</sub><nowiki> [IBD] Process Control Data</nowiki>]

===Al2O3 Thin-Film Properties (IBD)===

*Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
*HF etch rate ≈ 167nm/min
*Stress ≈ -332MPa (compressive)
*Refractive Index: ≈ 1.656
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = ''To Be Added''
**B =
**C =
*Absorbing < ~350nm

==TiO<sub>2</sub> deposition (IBD)==

*[https://wiki.nanotech.ucsb.edu/wiki/images/3/3b/New_IBD_TiO2_deposition.pdf TiO<sub>2</sub><nowiki> [IBD] Standard Recipe</nowiki>] - "''1_TiO2_dep''"
*[https://docs.google.com/spreadsheets/d/11A0ac8NU51bmcQ_grQcq9wuPwWnfy1_9MNk2DEo5yyo/edit#gid=834404663 TiO<sub>2</sub><nowiki> [IBD] Process Control Data</nowiki>]

===TiO<sub>2</sub> Thin-Film Properties (IBD)===

*Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
*HF etch rate ~5.34nm/min
*Stress ≈ -445MPa (compressive)
*Refractive Index: ≈ 2.259
*[[wikipedia:Cauchy's_equation|Cauchy Parameters]] (350-2000nm):
**A = 2.435
**B = -4.9045e-4
**C = 0.01309
*Absorbing < ~350nm wavelength

==SiO<sub>x</sub>N<sub>y</sub> deposition (IBD)==
These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by [[Demis D. John|Demis D. John]], 2010.
{|
![[File:IBD SiON Index @ 623nm vs. O2 Gas Flow - v3 - wiki.jpg|alt=plot showing varying refractive index between Si3N4 and SiO2|none|thumb|250x250px|IBD SiO<sub>x</sub>N<sub>y</sub>: Refractive Index vs. O2/N2 Flow.]]
![[File:IBD SiON - Dep rate vs O2 flow - wiki.png|alt=Rate varies monotonically from 53-5 Å/min.|none|thumb|Dep. Rate of IBD SiO<sub>x</sub>N<sub>y</sub> vs. Assist O<sub>2</sub> flow.]]
|}

==Standard Cleaning Procedure (IBD)==
You must edit the "''#_GridClean''"("#" is your group number) steps in your Process according to the following times:

*5min GridClean for 1hr or less deposition
*10min GridClean for up to 2hrs of dep.
*Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "''1_SiO2_Dep_Multi''" for an example.

===Standard Grid-Clean Recipe===
''[[To Be Added]]''

==Reference Recipes (Disabled Tools)==

===[[Sputter 2 (SFI Endeavor)|<big><u>Sputter 2 (SFI Endeavor)</u></big>]]===
'''This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.'''
'''Al Deposition (Sputter 2)'''

*[//wiki.nanotech.ucsb.edu/wiki/images/0/05/20-Al-Sputtering-Film-Sputter-2.pdf Al Deposition Recipe]


'''AlN<sub>x</sub> Deposition (Sputter 2)'''
==SiO{{sub|2}} deposition (IBD)==
*{{fl|IBD-SiO2-Recipe.pdf|SiO{{Sub|2}} dep}}
* Refractive Index: ≈1.485
* Rate: ≈6.1nm/min (users must calibrate this prior to critical deps)
* Stress ≈ -320MPa (compressive)


*[//wiki.nanotech.ucsb.edu/wiki/images/8/8c/Sputter-2-AlN-Endeavor-rev1.pdf AlN<sub>x</sub> Deposition Recipe]
==SiN deposition (IBD)==
* Refractive Index ≈ 2.01
* Rate ≈ 4.5nm/min (users must calibrate this prior to critical deps)
* Stress ≈ -1756MPa (compressive)


'''Au Deposition (Sputter 2)'''
*{{fl|IBD-SiN-recipe.pdf|SiN Recipe (IBD)}}
*{{fl|SiNfilm.pdf|SiN Film Data (IBD)}}
*{{fl|SiNrecipedetails.pdf|SiN Recipe Details (IBD)}}


*[//wiki.nanotech.ucsb.edu/wiki/images/8/8a/21-Au-Sputter-film-recipes-Sputter-2.pdf Au Deposition Recipe]
==Ta{{sub|2}}O{{sub|5}} deposition (IBD)==
* Refractive Index ≈ 2.10
* Rate ≈7.8nm/min (users must calibrate this prior to critical deps)
* Stress ≈ -140MPa (compressive)


'''TiO<sub>2</sub> Deposition (Sputter 2)'''
*{{fl|IBD-Ta2O5-Recipe.pdf|Ta{{sub|2}}O{{sub|5}} dep}}


*[//wiki.nanotech.ucsb.edu/wiki/images/c/c4/22-TiO2-Film-Sputter-2.pdf TiO2<sub>2</sub> Deposition Recipe]
==TiO{{sub|2}} deposition (IBD)==
*{{fl|IBD-TiO2-Recipe.pdf|TiO{{sub|2}} dep}}

Latest revision as of 18:05, 19 August 2024

Back to Vacuum Deposition Recipes. R1

Sputter 3 (AJA ATC 2000-F)

Please see the SignupMonkey Page for a list of currently installed targets.

Tips & Tricks

Ignition Issues

It is somewhat common that you might have a plasma ignition failure at some point. Common remedies for this are to increase the chamber pressure just for the ignition step, then drop dow to the process pressure in the PreClean and/or Dep step. For example, set the ignition step pressure to 10mTorr or 30mT, then during deposition decrease the pressure to 3mTorr and the plasma will stay lit.

Materials Table (Sputter 3)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt(mm) Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Target Consumed Lower Limit Data Below Comment
Au - - - - - - - - - - - - - Set: 200 W

Read: 400 VDC

no
Al2O3 3 200 (RF2) off 20 30 1.5 1.52"-4mm 5.32 1.6478 0 no Demis D. John
Co 10(5) 200 0 20 25 0 0 25-9 2.3 - - - - yes Alex K
Cr 5 200 0 20 25 0 0 44-4 6.84 - - - - no Brian
Cu 1.5 50(395v) 0 20 25 0 0 25-9 4.15 - - - - no Ning
Cu 5 150(~490v) 0 20 15 0 0 0.82"-9 8 - - - - yes Ning
Fe 10(5) 200 0 20 25 0 0 25-9 1.25 - - - - No Alex K
Mo 3 200 0 20 25 0 0 44-4 13.15 - - - - yes Ning
Ni 5 150 0 20 25 0 0 44-4 5.23 - - - - yes Ning
Ni 5 150 0 20 25 0 0 25-9 1.82 - - - - yes Ning
Ni 5 75 0 20 25 0 0 44-4 2.50 - - - - yes Ning
Ni 3 200 0 20 25 0 0 44-4 9.4 - - - - yes Ning
Ni 1.5 50(399v) 0 20 25 0 0 25-9 0.96 - - - - no Ning
Pt 3 50 0 20 25 0 0 0.82"-9 2.9 - - - - no Ning
Si 8 250 0 25 25 0 0 15-3 1.4 - - - - no Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiN 3 200 10 20 25 3 0 25-9 1.56 - - 1.992 - yes Brian
SiN 3 250 10 20 25 2.5 0 25-9 2.1 - - 2.06 - yes Brian
SiO2 3 200 10 20 25 0 3 25-9 3.68 - - 1.447 - yes Brian
SiO2 3 200 10 20 25 0 5 45-3 2.60 - - 1.471 - yes Brian
SiO2 3 250 10 20 25 0 2.5 25-9 4.3 - - 1.485 - yes Brian
Ta 5 150 0 20 25 0 0 44-4 9.47 - - - - yes Ning
Ta 5 75 0 20 25 0 0 44-4 5.03 - - - - yes Ning
Ti 3 100 0 20 25 0 0 25-9 1.34 - - - - yes Ning
SampleClean-NativeSiO2 10 0 18 20 25 0 0 44-4 - - - - - yes 150Volts 5 min

Height Conversion for Older Recipes

Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:

Old (mm) New (inches) Typical Gun Tilt (mm)
15
25 0.82 9
44 1.52 4

Interpolation plot can be found here.

Fe and Co Deposition (Sputter 3)

Cu Deposition (Sputter 3)

Mo Deposition (Sputter 3)

Ni and Ta Deposition (Sputter 3)

SiO2 Deposition (Sputter 3)

SiN Deposition (Sputter 3)

Ti Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

Please see the SignupMonkey page for a list of currently installed targets.

Materials Table (Sputter 4)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Power Source Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt(mm) Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Al 5 200 0 20 45 0 0 H2.75-T5 4.4 - - - - Yes Ning Cao
Al2O3 3 RF4-Sw1 200 0 20 30 0 1.5 H2.75-T5 5.1 1.64202 0 partial Demis D. John
Au 5 200 0 20 45 0 0 H1-T10 17.7 - - - - Yes Ning Cao
Au 10 200 0 20 45 0 0 H2.75-T5 35.5 - - - - Yes Demis: 200W rate (Max for Au) 2022-08-03
Cu 5 150 0 20 30 0 0 H0.82-T9 6.7 No (SEM available) Ning Cao
Nb 4 250 0 20 30 0 0 H2.00-T7 7.5 - - - - No
Pt 5 200 0 20 45 0 0 H2.75-T5 7.4 - - - - Yes Ning Cao
Pt 3 50(439V) 0 20 45 0 0 H2.75-T5 3.9 - - - - Yes Ning Cao
Ru 3 200 45 H2.75-T4 ~10 Yes Ning Cao
Ti 10 200 0 20 45 0 0 H2.75-T5 2.3 - - - - Yes Ning Cao
TiN 3 150 110V 20 48.25 1.75 0 H2.5-T5 2 - 60 - - No
TiO2 3 250(RF:450V) 0 20 45 0 3 H2.75-T5 4.3 - - - Yes Ning Cao
TiW 4.5 200 0 20 45 0 0 H1-T10 4.7 - - - - Yes Ning Cao
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher

Au Deposition (Sputter 4)

Al Deposition (Sputter 4)

Al2O3 Deposition (Sputter 4)

  • Rate: 5.134 nm/min
  • Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
    • A = 1.626
    • B = 5.980E-3
    • C = 1.622E-4

Pt Deposition (Sputter 4)

Ru Deposition (Sputter 4)

Ti-Au Deposition (Sputter 4)

TiO2 Deposition (Sputter 4)

TiW Deposition (Sputter 4)

W-TiW Deposition (Sputter 4)

Sputter 5 (AJA ATC 2200-V)

Please see the SignupMonkey page for a list of currently installed targets.

Materials Table (Sputter 5)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material P(mT) Power Source Pow(W) Sub(V) T(C) Ar N2 O2 Height-Tilt(mm) Rate(nm/min) Stress(MPa) Rs(uOhm-cm) Rq(nm) n@633nm k@633nm LPDb/LPDa* Data Below Comment
Al 5 250 0 20 45 0 0 H1-T10 2.5 22 No (SEM available) Ning
Al2O3 1.5 DC5-SW1 150 - - 45 - 5 H2.75-T5 5.3 ? ? ? 1.641 - ? No Demis 2018-04-13
Cr 5.0 RF 200 ~345 20 45 H2.75-T5 4.47 No BT 2024-07-02
Pt 3.0 200(507v) - - 45 - - H1-T10 7.03 ? ? ? 2.068 4.951 ? No Ning 2021-09-27
SiO2 3 250 120 20 45 0 2 H1.0-T10 2.32 - - 1.49 - 153/6384 No Biljana
SiO2 3 250 120 20 45 0 4.5 H1.0-T10 2.29 -515 - 0.210 1.49 138/4445 No ( AFM available) Biljana
SiO2 3 250 120 20 45 0 6 H1.0-T10 2.32 - - 1.49 - 27/1515 Yes Biljana
Ti 3.0 200(374v) - - 45 - - H1-T10 2.52 ? ? ? 2.679 1.853 ? No Ning 2021-09-27

*LPD: light particle detection:

  • LPDb: light particle detection before deposition
  • LPDa: light particle detection after deposition

SiO2 Deposition (Sputter 5)

Ion Beam Deposition (Veeco NEXUS)

Ion-Beam Assisted Deposition - high density reactive sputtering for dielectric film stacks, with angled/rotating fixtures.

IBD Process Control Plots - Plots of all process control data.

SiO2 deposition (IBD)

SiO2 Thin-Film Properties (IBD)

  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate ~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • Cauchy Parameters (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

SiO2 Uniformity

Measured in June 2010 (Demis D. John)

Uniformity Statistics
Thickness (nm) Refractive Index

(at 632nm)

Mean (Avg.), nm 1677.80 1.480
Min 1671.09 1.479
Max 1688.9 1.482
Std. Deviation (nm) 5.99 8.6e-4
Plot of SiO2 thickness and refractive index
Plot of SiO2 thickness and refractive index measured across 6-inch wafer, measured with ellipsometry. Credit: Demis D. John, 2010-06-15


Si3N4 deposition (IBD)

Si3N4 Thin-Film Properties (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate: ~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • Cauchy Parameters (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

Ta2O5 deposition (IBD)

Ta2O5 Thin-Film Properies (IBD)

  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF Etch Rate ≈ 2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • Cauchy Parameters (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

Al2O3 deposition (IBD)

Al2O3 Thin-Film Properties (IBD)

  • Deposition Rate ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ≈ 167nm/min
  • Stress ≈ -332MPa (compressive)
  • Refractive Index: ≈ 1.656
  • Cauchy Parameters (350-2000nm):
    • A = To Be Added
    • B =
    • C =
  • Absorbing < ~350nm

TiO2 deposition (IBD)

TiO2 Thin-Film Properties (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • Cauchy Parameters (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm wavelength

SiOxNy deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability by getting away from the low-flow limit of the MFC's. Data provided by Demis D. John, 2010.

plot showing varying refractive index between Si3N4 and SiO2
IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
Rate varies monotonically from 53-5 Å/min.
Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Standard Cleaning Procedure (IBD)

You must edit the "#_GridClean"("#" is your group number) steps in your Process according to the following times:

  • 5min GridClean for 1hr or less deposition
  • 10min GridClean for up to 2hrs of dep.
  • Do not deposit for longer than 2hrs - instead break up your Process into multiple 2-hr subroutines with cleans in between. See the recipe "1_SiO2_Dep_Multi" for an example.

Standard Grid-Clean Recipe

To Be Added

Reference Recipes (Disabled Tools)

Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&oldid=162272"