PECVD Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN Data 2015] |
*[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN Data 2015] |
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*[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 1000A Thickness uniformity 2015] |
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Revision as of 23:20, 20 February 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
SiN deposition (PECVD #2)
LS SiN deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
---|---|---|
SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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