PECVD Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2016] |
*[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2016] |
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== OTHER recipes LS SiN deposition (PECVD #1) == |
== OTHER recipes: LS SiN and SiO<sub>x</sub>N<sub>y</sub>deposition (PECVD #1) == |
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*[[media:New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]] |
*[[media:New PECVD1-LS SIN-Turner05recipe 2014 LS SIN recipe.pdf|LS SiN Standard Recipe]] |
Revision as of 22:23, 8 January 2016
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data 2014
- SiN Data 2015
- SiN Data 2016
- SiN 1000A Thickness uniformity 2014
- SiN 1000A Thickness uniformity 2015
- SiN Thickness uniformity 2016
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 Data 2014
- SiO2 Data 2015
- SiO2 Data 2016
- SiO2 1000A Thickness uniformity 2014
- SiO2 1000A Thickness uniformity 2015
- SiO2 1000A Thickness uniformity 2016
OTHER recipes: LS SiN and SiOxNydeposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° (pinholes) | 100° (pinholes) | 250° |
---|---|---|
SiN (100% SiH4 )
50° (pinholes) | 100° (pinholes) | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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