Sputtering Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (→‎Al2O3 deposition (IBD): AlOx recipe name)
Line 392: Line 392:


== Al2O3 deposition (IBD) ==
== Al2O3 deposition (IBD) ==
* Al2O3 standard recipe ( working on)
* Al2O3 standard recipe: 1_Al2O3_dep


* [https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]
* [https://docs.google.com/spreadsheets/d/1Qwxa7rtq2kGeFUQxnjGFgtdCJP4uIX_bdUcCWFvO72g/edit#gid= Al2O3 Data 2018]

Revision as of 20:53, 20 June 2018

Back to Vacuum Deposition Recipes. R1

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

AlNx Deposition (Sputter 2)

Au Deposition (Sputter 2)

TiO2 Deposition (Sputter 2)

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. Please see the SignupMonkey Page for a list of currently installed targets.

Material P(mT) Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Al2O3 3 200 (RF2) off 20 30 1.5 1.52"-4mm 5.32 1.6478 0 no Demis D. John
Co 10(5) 200 0 20 25 0 0 25-9 2.3 - - - - yes Alex K
Cr 5 200 0 20 25 0 0 44-4 6.84 - - - - no Brian
Cu 1.5 50(395v) 0 20 25 0 0 25-9 4.15 - - - - no Ning
Cu 5 150(~490v) 0 20 15 0 0 0.82"-9 8 - - - - yes Ning
Fe 10(5) 200 0 20 25 0 0 25-9 1.25 - - - - No Alex K
Mo 3 200 0 20 25 0 0 44-4 13.15 - - - - yes Ning
Ni 5 150 0 20 25 0 0 44-4 5.23 - - - - yes Ning
Ni 5 150 0 20 25 0 0 25-9 1.82 - - - - yes Ning
Ni 5 75 0 20 25 0 0 44-4 2.50 - - - - yes Ning
Ni 3 200 0 20 25 0 0 44-4 9.4 - - - - yes Ning
Ni 1.5 50(399v) 0 20 25 0 0 25-9 0.96 - - - - no Ning
Pt 3 50 0 20 25 0 0 25-9 4.1 - - - - no Ning
Si 8 250 0 25 25 0 0 15-3 1.4 - - - - no Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiN 3 200 10 20 25 3 0 25-9 1.56 - - 1.992 - yes Brian
SiN 3 250 10 20 25 2.5 0 25-9 2.1 - - 2.06 - yes Brian
SiO2 3 200 10 20 25 0 3 25-9 3.68 - - 1.447 - yes Brian
SiO2 3 200 10 20 25 0 5 45-3 2.60 - - 1.471 - yes Brian
SiO2 3 250 10 20 25 0 2.5 25-9 4.3 - - 1.485 - yes Brian
Ta 5 150 0 20 25 0 0 44-4 9.47 - - - - yes Ning
Ta 5 75 0 20 25 0 0 44-4 5.03 - - - - yes Ning
Ti 3 100 0 20 25 0 0 25-9 1.34 - - - - yes Ning
SampleClean-NativeSiO2 10 0 18 20 25 0 0 44-4 - - - - - yes 150Volts 5 min

Height Conversion for Older Recipes

Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:

Old (mm) New (inches) Typical Gun Tilt (mm)
15
25 0.82 9
44 1.52 4

Interpolation plot can be found here.

Fe and Co Deposition (Sputter 3)

Cu Deposition (Sputter 3)

Mo Deposition (Sputter 3)

Ni and Ta Deposition (Sputter 3)

SiO2 Deposition (Sputter 3)

SiN Deposition (Sputter 3)

Ti Deposition (Sputter 3)

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. Please see the SignupMonkey page for a list of currently installed targets.

Material P(mT) Power Source Pow(W) Sub(W) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) n@633nm k@633nm Data Below Comment
Al 5 200 0 20 45 0 0 H2.75-T5 4.4 - - - - Yes Ning Cao
Al2O3 3 RF4-Sw1 200 0 20 30 0 1.5 H2.75-T5 5.1 1.64202 0 partial Demis D. John
Au 5 200 0 20 45 0 0 H1-T10 17.7 - - - - Yes Ning Cao
Au 10 300 0 20 45 0 0 H2.75-T5 45.4 - - - - Yes Ning Cao
Cu 5 150 0 20 30 0 0 H0.82-T9 6.7 No (SEM available) Ning Cao
Nb 4 250 0 20 30 0 0 H2.00-T7 7.5 - - - - No
Pt 5 200 0 20 45 0 0 H2.75-T5 7.4 - - - - Yes Ning Cao
Pt 3 50(439V) 0 20 45 0 0 H2.75-T5 3.9 - - - - Yes Ning Cao
Ti 10 200 0 20 45 0 0 H2.75-T5 2.3 - - - - Yes Ning Cao
TiN 3 150 110V 20 48.25 1.75 0 H2.5-T5 2 - 60 - - No
TiO2 3 250(RF:450V) 0 20 45 0 3 H2.75-T5 4.3 - - - Yes Ning Cao
TiW 4.5 200 0 20 45 0 0 H1-T10 4.7 - - - - Yes Ning Cao
TiW 4.5 300 0 75 45 0 0 H2.75-T5 9.5 -150 to 150 60 - - Yes 10%Ti by Wt
W 3 300 0 50 45 0 0 H2.75-T5 11.5 -150 to 150 11 - - Yes Jeremy Watcher

W-TiW Deposition (Sputter 4)

Ti-Au Deposition (Sputter 4)

Pt Deposition (Sputter 4)

TiW Deposition (Sputter 4)

TiO2 Deposition (Sputter 4)

Au Deposition (Sputter 4)

Al Deposition (Sputter 4)

Al2O3 Deposition (Sputter 4)

  • Rate: 5.134 nm/min
  • Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
    • A = 1.626
    • B = 5.980E-3
    • C = 1.622E-4

Sputter 5 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Please see the SignupMonkey page for a list of currently installed targets.

Material P(mT) Power Source Pow(W) Sub(V) T(C) Ar N2 O2 Height-Tilt Rate(nm/min) Stress(MPa) Rs(uOhm-cm) Rq(nm) n@633nm k@633nm LPDb/LPDa Data Below Comment
Al 5 250 0 20 45 0 0 H1-T10 2.5 22 No (SEM available) Ning
Al2O3 1.5 DC5-SW1 150 - - 45 - 5 H2.75-T5 5.3 ? ? ? 1.641 - ? No Demis 2018-04-13
SiO2 3 250 120 20 45 0 2 H1.0-T10 2.32 - - 1.49 - 153/6384 No Biljana
SiO2 3 250 120 20 45 0 4.5 H1.0-T10 2.29 -515 - 0.210 1.49 138/4445 No ( AFM available) Biljana
SiO2 3 250 120 20 45 0 6 H1.0-T10 2.32 - - 1.49 - 27/1515 Yes Biljana
  • LPD-light particle detection
  • LPDb- light particle detection before deposition
  • LPDa- light particle detection after deposition

SiO2 Deposition (Sputter 5)

Ion Beam Deposition (Veeco NEXUS)

SiO2 deposition (IBD)

SiO2 1hr deposition properties:
  • Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~350 nm/min
  • Stress ≈ -390MPa (compressive)
  • Refractive Index: ≈ 1.494
  • [Cauchy Parameters] (350-2000nm):
    • A = 1.480
    • B = 0.00498
    • C = -3.2606e-5

Si3N4 deposition (IBD)

  • Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~11nm/min
  • Stress ≈ -1590MPa (compressive)
  • Refractive Index: ≈ 1.969
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.000
    • B = 0.01974
    • C = 1.2478e-4

SiOxNy deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

plot showing varying refractive index between Si3N4 and SiO2
IBD SiOxNy: Refractive Index vs. O2/N2 Flow.
Rate varies monotonically from 53-5 Å/min.
Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta2O5 deposition (IBD)


  • Ta2O5 1hr depositions:
  • Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
  • HF e.r.~2 nm/min
  • Stress ≈ -232MPa (compressive)
  • Refractive Index: ≈ 2.172
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.1123
    • B = 0.018901
    • C = -0.016222

TiO2 deposition (IBD)

  • Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~5.34nm/min
  • Stress ≈ -445MPa (compressive)
  • Refractive Index: ≈ 2.259
  • [Cauchy Parameters] (350-2000nm):
    • A = 2.435
    • B = -4.9045e-4
    • C = 0.01309
  • Absorbing < ~350nm

Al2O3 deposition (IBD)

  • Al2O3 standard recipe: 1_Al2O3_dep
  • Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
  • HF etch rate ~167nm/min
  • Stress ≈ -332MPa (compressive)
  • Refractive Index: ≈ 1.656
  • [Cauchy Parameters] (350-2000nm):( working on)
    • A =
    • B =
    • C =
  • Absorbing < ~350nm
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Sputtering_Recipes&oldid=155210"