Sputtering Recipes

Back to Vacuum Deposition Recipes. R1

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. Please see the SignupMonkey Page for a list of currently installed targets.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Target Consumed Lower Limit	Data Below	Comment
Au	-	-	-	-	-	-	-	-	-	-	-	-	-	Set: 200 W Read: 400 VDC	no
Al2O3	3	200 (RF2)	off	20	30		1.5	1.52"-4mm	5.32			1.6478	0		no	Demis D. John
Co	10(5)	200	0	20	25	0	0	25-9	2.3	-	-	-	-		yes	Alex K
Cr	5	200	0	20	25	0	0	44-4	6.84	-	-	-	-		no	Brian
Cu	1.5	50(395v)	0	20	25	0	0	25-9	4.15	-	-	-	-		no	Ning
Cu	5	150(~490v)	0	20	15	0	0	0.82"-9	8	-	-	-	-		yes	Ning
Fe	10(5)	200	0	20	25	0	0	25-9	1.25	-	-	-	-		No	Alex K
Mo	3	200	0	20	25	0	0	44-4	13.15	-	-	-	-		yes	Ning
Ni	5	150	0	20	25	0	0	44-4	5.23	-	-	-	-		yes	Ning
Ni	5	150	0	20	25	0	0	25-9	1.82	-	-	-	-		yes	Ning
Ni	5	75	0	20	25	0	0	44-4	2.50	-	-	-	-		yes	Ning
Ni	3	200	0	20	25	0	0	44-4	9.4	-	-	-	-		yes	Ning
Ni	1.5	50(399v)	0	20	25	0	0	25-9	0.96	-	-	-	-		no	Ning
Pt	3	50	0	20	25	0	0	0.82"-9	2.9	-	-	-	-		no	Ning
Si	8	250	0	25	25	0	0	15-3	1.4	-	-	-	-		no	Gerhard - ramp 2W/s - 3% Unif 4" wafer
SiN	3	200	10	20	25	3	0	25-9	1.56	-	-	1.992	-		yes	Brian
SiN	3	250	10	20	25	2.5	0	25-9	2.1	-	-	2.06	-		yes	Brian
SiO2	3	200	10	20	25	0	3	25-9	3.68	-	-	1.447	-		yes	Brian
SiO2	3	200	10	20	25	0	5	45-3	2.60	-	-	1.471	-		yes	Brian
SiO2	3	250	10	20	25	0	2.5	25-9	4.3	-	-	1.485	-		yes	Brian
Ta	5	150	0	20	25	0	0	44-4	9.47	-	-	-	-		yes	Ning
Ta	5	75	0	20	25	0	0	44-4	5.03	-	-	-	-		yes	Ning
Ti	3	100	0	20	25	0	0	25-9	1.34	-	-	-	-		yes	Ning
SampleClean-NativeSiO2	10	0	18	20	25	0	0	44-4	-	-	-	-	-		yes	150Volts 5 min

Height Conversion for Older Recipes

Old recipes using the manual Height setting in millimeters can be converted to the new programmatic settings in inches as follows:

Old (mm)	New (inches)	Typical Gun Tilt (mm)
15
25	0.82	9
44	1.52	4

Interpolation plot can be found here.

Fe and Co Deposition (Sputter 3)

• Fe and Co Deposition Recipe

Cu Deposition (Sputter 3)

• Cu Deposition Recipe

Mo Deposition (Sputter 3)

• Mo Deposition Recipe

Ni and Ta Deposition (Sputter 3)

• Ni and Ta Deposition Recipe
• Ni Sputtering Film Recipe-3mT-200W

SiO2 Deposition (Sputter 3)

• SiO2 Uniformity Data
• SiO2 Flow and Bias Variations Including AFM Data

SiN Deposition (Sputter 3)

• SiN Flow and RF Variations Including AFM Data

Ti Deposition (Sputter 3)

• Ti Sputtering Film Recipe-3mT-100W

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended. Please see the SignupMonkey page for a list of currently installed targets.

Material	P(mT)	Power Source	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
Al	5		200	0	20	45	0	0	H2.75-T5	4.4	-	-	-	-	Yes	Ning Cao
Al2O3	3	RF4-Sw1	200	0	20	30	0	1.5	H2.75-T5	5.1			1.64202	0	partial	Demis D. John
Au	5		200	0	20	45	0	0	H1-T10	17.7	-	-	-	-	Yes	Ning Cao
Au	10		300	0	20	45	0	0	H2.75-T5	45.4	-	-	-	-	Yes	Ning Cao
Cu	5		150	0	20	30	0	0	H0.82-T9	6.7					No (SEM available)	Ning Cao
Nb	4		250	0	20	30	0	0	H2.00-T7	7.5	-	-	-	-	No
Pt	5		200	0	20	45	0	0	H2.75-T5	7.4	-	-	-	-	Yes	Ning Cao
Pt	3		50(439V)	0	20	45	0	0	H2.75-T5	3.9	-	-	-	-	Yes	Ning Cao
Ti	10		200	0	20	45	0	0	H2.75-T5	2.3	-	-	-	-	Yes	Ning Cao
TiN	3		150	110V	20	48.25	1.75	0	H2.5-T5	2	-	60	-	-	No
TiO2	3		250(RF:450V)	0	20	45	0	3	H2.75-T5	4.3	-		-	-	Yes	Ning Cao
TiW	4.5		200	0	20	45	0	0	H1-T10	4.7	-	-	-	-	Yes	Ning Cao
TiW	4.5		300	0	75	45	0	0	H2.75-T5	9.5	-150 to 150	60	-	-	Yes	10%Ti by Wt
W	3		300	0	50	45	0	0	H2.75-T5	11.5	-150 to 150	11	-	-	Yes	Jeremy Watcher

W-TiW Deposition (Sputter 4)

• W-TiW Deposition Recipe

Ti-Au Deposition (Sputter 4)

• Ti-Au Deposition Recipe and SEM Cross-Sections

Pt Deposition (Sputter 4)

• Pt Film's AFM Step and Roughness

TiW Deposition (Sputter 4)

• TiW Film's AFM Step and Roughness

TiO₂ Deposition (Sputter 4)

• TiO₂ Film's Refractive Index Spectrum, Resistivity, AFM Roughness

Au Deposition (Sputter 4)

• Au Film's AFM Step and Roughness

Al Deposition (Sputter 4)

• Al Film SEM Profile

Al2O3 Deposition (Sputter 4)

• Rate: 5.134 nm/min
• Cauchy Refractive Index Params (fit from λ=190-1700nm, indicating transparency over this range)
  • A = 1.626
  • B = 5.980E-3
  • C = 1.622E-4

Sputter 5 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Please see the SignupMonkey page for a list of currently installed targets.

Material	P(mT)	Power Source	Pow(W)	Sub(V)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	Rq(nm)	n@633nm	k@633nm	LPDb/LPDa*	Data Below	Comment
Al	5		250	0	20	45	0	0	H1-T10	2.5	22						No (SEM available)	Ning
Al2O3	1.5	DC5-SW1	150	-	-	45	-	5	H2.75-T5	5.3	?	?	?	1.641	-	?	No	Demis 2018-04-13
SiO2	3		250	120	20	45	0	2	H1.0-T10	2.32		-	-	1.49	-	153/6384	No	Biljana
SiO2	3		250	120	20	45	0	4.5	H1.0-T10	2.29	-515	-	0.210	1.49		138/4445	No ( AFM available)	Biljana
SiO2	3		250	120	20	45	0	6	H1.0-T10	2.32		-	-	1.49	-	27/1515	Yes	Biljana

*LPD: light particle detection:

• LPDb: light particle detection before deposition
• LPDa: light particle detection after deposition

SiO2 Deposition (Sputter 5)

• SiO2 film

Ion Beam Deposition (Veeco NEXUS)

• IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
  • All users are required to enter their calibration deps (simple test deps only)
• Particulates in SiO2 and Ta2O5 in 2015

SiO₂ deposition (IBD)

• SiO₂ Standard Recipe
• SiO₂ Data December 2014
• SiO₂ Thickness uniformity 2014
• SiO₂ Data-15min depositions 2015
• SiO₂ Thickness uniformity-15 min depositions 2015
• SiO₂ Data-1hr depositions 2015
• SiO₂ Thickness uniformity-1hr depositions 2015
• SiO₂ Data-1hr depositions 2016
• SiO₂ Thickness uniformity-1hr depositions 2016

SiO2 1hr deposition properties:

• Dep.rate: ≈ 5.2 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~350 nm/min
• Stress ≈ -390MPa (compressive)
• Refractive Index: ≈ 1.494
• [Cauchy Parameters] (350-2000nm):
  • A = 1.480
  • B = 0.00498
  • C = -3.2606e-5

Si₃N₄ deposition (IBD)

• Si₃N₄ Standard Recipe
• Si₃N₄ Data December 2014
• Si₃N₄ Thickness uniformity 2014

• Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~11nm/min
• Stress ≈ -1590MPa (compressive)
• Refractive Index: ≈ 1.969
• [Cauchy Parameters] (350-2000nm):
  • A = 2.000
  • B = 0.01974
  • C = 1.2478e-4

SiO_xN_y deposition (IBD)

These are some old (2010), initial characterizations only. A recipe improvement would be to increase the Assist O2+N2 = 60sccm total, increasing repeatability. Contact Demis for more info.

IBD SiOxNy: Refractive Index vs. O2/N2 Flow.	Dep. Rate of IBD SiOxNy vs. Assist O2 flow.

Ta₂O₅ deposition (IBD)

• Ta₂O₅ Standard Recipe
• Ta₂O₅ Data December 2014
• Ta₂O₅ Thickness uniformity 2014

• Ta₂O₅ Data December-15 min depositions 2015
• Ta₂O₅ Thickness uniformity-15 min depositions 2015
• Ta₂O₅ Data December-1hr depositions 2015
• Ta₂O₅ Thickness uniformity-1hr depositions 2015
• Ta₂O₅ Data December-1hr depositions 2016
• Ta₂O₅ Thickness uniformity-1hr depositions 2016

• Ta2O5 1hr depositions:
• Deposition Rate: ≈ 7.8 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~2 nm/min
• Stress ≈ -232MPa (compressive)
• Refractive Index: ≈ 2.172
• [Cauchy Parameters] (350-2000nm):
  • A = 2.1123
  • B = 0.018901
  • C = -0.016222

TiO₂ deposition (IBD)

• TiO₂ Standard Recipe
• TiO₂ Data December 2014
• TiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~5.34nm/min
• Stress ≈ -445MPa (compressive)
• Refractive Index: ≈ 2.259
• [Cauchy Parameters] (350-2000nm):
  • A = 2.435
  • B = -4.9045e-4
  • C = 0.01309
• Absorbing < ~350nm

Al2O3 deposition (IBD)

• Al2O3 standard recipe: 1_Al2O3_dep

• Al2O3 Data 2018
• Al2O3 Thickness uniformity 2018

• Deposition Rate: ≈ 2.05nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~167nm/min
• Stress ≈ -332MPa (compressive)
• Refractive Index: ≈ 1.656
• [Cauchy Parameters] (350-2000nm):( working on)
  • A =
  • B =
  • C =
• Absorbing < ~350nm

Sputter 2 (SFI Endeavor)

This Tool has been Disabled, and is not available for use any more! These recipes are displayed here for historical/reference purposes only.

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe