Dry Etching Recipes: Difference between revisions

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deleted RIE3
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{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" border="1"
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! colspan="17" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
! colspan="16" width="725" height="45" |<div style="font-size: 150%;">Dry Etching Recipes</div>
|- bgcolor="#d0e7ff"
|- bgcolor="#d0e7ff"
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
| bgcolor="#eaecf0" |<!-- INTENTIONALLY LEFT BLANK -->
! colspan="3" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="2" |'''[[RIE Etching Recipes|RIE Etching]]'''
! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="6" |'''[[ICP Etching Recipes|ICP Etching]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
! colspan="4" bgcolor="#d0e7ff" align="center" |'''[[Oxygen Plasma System Recipes|Oxygen Plasma Systems]]'''
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! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
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|[[RIE Etching Recipes|A]]
|[[RIE Etching Recipes|A]]
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3</sub>
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! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
! bgcolor="#d0e7ff" align="center" |Al<sub>2</sub>O<sub>3 (Sapphire)</sub>
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! bgcolor="#d0e7ff" align="center" |AlGaAs
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
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! bgcolor="#d0e7ff" align="center" |CdZnTe
! bgcolor="#d0e7ff" align="center" |CdZnTe
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
|{{rl|RIE Etching Recipes|CdZnTe Etch (RIE 2)}}
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|{{rl|RIE Etching Recipes|AlGaAs\GaAs Etching (RIE 5)}}
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! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
! bgcolor="#d0e7ff" align="center" |HfO<sub>2</sub>
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! bgcolor="#d0e7ff" align="center" |InGaAlAs
! bgcolor="#d0e7ff" align="center" |InGaAlAs
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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! bgcolor="#d0e7ff" align="center" |InGaAsP
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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! bgcolor="#d0e7ff" align="center" |InP
! bgcolor="#d0e7ff" align="center" |InP
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
|{{rl|RIE Etching Recipes|RIE 2 (MRC)|InP-InGaAsP-InGaAlAs Etching (RIE 2)|InP Etch (RIE 2)}}
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! bgcolor="#d0e7ff" align="center" |ITO
! bgcolor="#d0e7ff" align="center" |ITO
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
|{{rl|RIE Etching Recipes|ITO Etch (RIE 2)}}
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& ARC
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|A
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
|[https://wiki.nanotech.ucsb.edu/wiki/RIE_Etching_Recipes#Photoresist_and_ARC_.28RIE_5.29 R]
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! bgcolor="#d0e7ff" align="center" |ZnS
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
|{{rl|RIE Etching Recipes|ZnS Etching (RIE 2)}}
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! bgcolor="#d0e7ff" align="center" |'''Material'''
! bgcolor="#d0e7ff" align="center" |'''Material'''
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_2_.28MRC.29|RIE 2<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_3_.28MRC.29|RIE 3<br> <span style="font-size: 88%;">(MRC)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[RIE_Etching_Recipes#RIE_5_.28PlasmaTherm.29|RIE 5<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]
| bgcolor="#daf1ff" |[[ICP_Etching_Recipes#DSEIII_.28PlasmaTherm.2FDeep_Silicon_Etcher.29|DSEIII<br><span style="font-size: 88%;">(PlasmaTherm)</span>]]

Revision as of 22:37, 6 August 2024

Process Control Data

See above linked page for process control data (dep rate/stress etc. over time), for a selection of often-used dry etches

Dry Etching Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Dry Etching Recipes
RIE Etching ICP Etching Oxygen Plasma Systems Other Dry Etchers
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E646V) 		ICP Etch 2
(Panasonic E626I) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)
Ag A
Al A R1 R2 A
Au R1
Cr A R1 R1 A
Cu A
Ge A R1 A A
Mo A
Nb A R1
Ni R1
Os A R1
Pt R1
Ru A R4 A
Si R1 R3 R1 R1 A
Ta A R1 A
Ti R1 R1 A
Al2O3 A R3 A
Al2O3 (Sapphire) R1 R1 A
AlGaAs R1 R1 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
AlGaN R2 R1 A
AlN R1 A
BCB A
CdZnTe R1 A
GaAs R1 R1 R3 R3 GaAs-AlGaAs Etch (Unaxis VLR) A
GaN R1 R1 R1 R2 R1 A
GaSb A R1 R1 GaSb Etch Unaxis VLR) A
HfO2 A
InGaAlAs InP-InGaAsP-InGaAlAs Etching (RIE 2) R1 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InGaAsP InP-InGaAsP-InGaAlAs Etching (RIE 2) R3 InP-InGaAs-InAlAs Etch (Unaxis VLR) A
InP InP-InGaAsP-InGaAlAs Etching (RIE 2) A R1 R6 InP-InGaAs-InAlAs Etch (Unaxis VLR) R1
ITO R1 A
LiNbO3 A
Photoresist

& ARC

R R4 R R3 R R A
SiC R1 R1 A
SiN R4 R1 R3 A A
SiO2 R6 R1 R6 R1 A
SiOxNy A R1 A
SU8 A
Ta2O5 A R1 A
TiN A
TiO2 A
W-TiW R1 R1 A
ZnO2 A
ZnS R1 A
ZnSe R1 A
ZrO2 A
Material RIE 2
(MRC) 		RIE 5
(PlasmaTherm) 		DSEIII
(PlasmaTherm) 		Fluorine ICP (PlasmaTherm) ICP Etch 1
(Panasonic E626I) 		ICP Etch 2
(Panasonic E640) 		Oxford ICP (PlasmaPro 100) ICP-Etch
(Unaxis VLR) 		Ashers
(Technics PEII) 		Plasma Clean (YES EcoClean) UV Ozone Reactor Plasma Activation
(EVG 810) 		XeF2 Etch
(Xetch) 		Vapor HF Etch
(uETCH) 		CAIBE
(Oxford)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
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