PECVD Recipes: Difference between revisions
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*[[media:PECVD1-SiN-1000A Standard recipe.pdf|SiN Standard Recipe]] |
*[[media:PECVD1-SiN-1000A Standard recipe.pdf|SiN Standard Recipe]] |
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*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]] |
*[[media:PECVD1 SIN Data-March 2014 SIN data.pdf|SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDkyQmFVXzQxbEJPRnFwNWlyVURwbGc&usp=drive_web#gid=sharing SiN Data March 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDkyQmFVXzQxbEJPRnFwNWlyVURwbGc&usp=drive_web#gid=sharing SiN Data March 2014] |
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* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
* [[media:PECVD1-SiON-Recipe.pdf|Low Stress Si<sub>3</sub>N<sub>4</sub> - Variable Stress Recipes]] |
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Revision as of 01:13, 22 March 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)
- SiN Data March 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
- SiO2 Deposition Recipe
- SiO2 Data (Deposition rate, Refractive Index, Stress, HF etch rate)
- SiO2 Data March 2014
- SiO2 1000A Thickness uniformity 2014
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
| 50° | 100° | 250° |
|---|---|---|
SiN (100% SiH4 )
| 50° | 100° | 250° |
|---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (2% SiH4 - No Ar)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 HDR)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 LDR)
| 50° | 100° | 250° |
|---|---|---|
Amorphous Si (100%SiH4 Ar He)
| 90° | 250° |
|---|---|