Difference between revisions of "PECVD Recipes"
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*[[media:PECVD1-SiO2-standard recipe 1000A.pdf|SiO<sub>2</sub> Standard Recipe]] |
*[[media:PECVD1-SiO2-standard recipe 1000A.pdf|SiO<sub>2</sub> Standard Recipe]] |
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*[[media:PECVD1 SiO2 Data-March 2014 SiO2 Data.pdf|SiO<sub>2</sub> Data (Deposition rate, Refractive Index, Stress, HF etch rate)]] |
*[[media:PECVD1 SiO2 Data-March 2014 SiO2 Data.pdf|SiO<sub>2</sub> Data (Deposition rate, Refractive Index, Stress, HF etch rate)]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=2=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=2=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014] |
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Revision as of 10:51, 24 March 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Data March 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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