PECVD Recipes: Difference between revisions
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==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
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*[[media: |
*[[media:AdvPECVD-LS Nitride2 300C standard recipe.pdf|LS Nitride2 Standard Recipe]] |
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*[[media:New Advanced PECVD LS NITRIDE2 April 2014.pdf|LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )]] |
*[[media:New Advanced PECVD LS NITRIDE2 April 2014.pdf|LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data April 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data April 2014] |
Revision as of 16:18, 16 April 2014
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)
- SiN Data April 2014
- SiN 1000A Thickness uniformity 2014
- Low Stress Si3N4 - Variable Stress Recipes
- Low Stress Si3N4 - Variable Stress Plot
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 Data (Deposition rate, Refractive Index, Stress, HF etch rate)
- SiO2 Data April 2014
- SiO2 1000A Thickness uniformity 2014
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)
- Nitride2 Data April 2014
- Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 9.0 nm/min
- Refractive Index: ≈ 1.952
- Stress ≈ 484MPa
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data April 2014
- Oxide Thickness uniformity 2014
- Deposition Rate: ≈ 28.0 nm/min
- Refractive Index: ≈ 1.472
- Stress ≈ -270MPa
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data April 2014
- LS Nitride2 Thickness uniformity 2014
- Deposition Rate: ≈ 8.34 nm/min
- Refractive Index: ≈ 1.932
- Stress ≈ -45MPa
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4 )
50° | 100° | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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