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PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO₂ deposition (PECVD #1)

SiO_xN_y deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO₂ deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

Amorphous Si Deposition Recipe

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH₄)

50°	100°	250°
SiN Deposition Recipe (5W 50° High Stress) SiN Deposition Recipe (50W 50° Medium Stress) SiN Deposition Recipe (120W 50° Low Stress)	SiN Deposition Recipe (5W 100° High Stress) SiN Deposition Recipe (50W 100° Medium Stress) SiN Deposition Recipe (120W 100° Low Stress) Comparison Table SiNx (120W 100° Low Stress) Comparison Table SiNx (50W 100° Medium Stress) Comparison Table SiNx (5W 100° High Stress) SiNx SEM images (50W 100° Medium Stress) SiNx SEM images (5W 100° High Stress)	SiN Deposition Recipe (5W 250° High Stress) SiN Deposition Recipe (50W 250° Medium Stress) SiN Deposition Recipe (120W 250° Low Stress) Comparison Table SiNx (120W 250° Low Stress) Comparison Table SiNx (50W 250° Medium Stress) Comparison Table SiNx (5W 250° High Stress) Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)

SiN (2% SiH₄ - No-Ar)

50°	100°	250°
SiN Deposition Recipe - No Ar (5W 50° High Stress) SiN Deposition Recipe - No Ar (50W 50° Medium Stress) SiN Deposition Recipe - No Ar (120W 50° Low Stress)	SiN Deposition Recipe - No Ar (5W 100° High Stress) SiN Deposition Recipe - No Ar (50W 100° Medium Stress) SiN Deposition Recipe - No Ar (120W 100° Low Stress)	SiN Deposition Recipe - No Ar (5W 250° High Stress) SiN Deposition Recipe - No Ar (50W 250° Medium Stress) SiN Deposition Recipe - No Ar (120W 250° Low Stress)

SiN (2% SiH₄ - No-Ar - Extra N₂)

50°	100°	250°
SiN Deposition Recipe - No Ar Extra N₂ (120W 50° Low Stress)	SiN Deposition Recipe - No Ar Extra N₂ (120W 100° Low Stress)	SiN Deposition Recipe - No Ar Extra N₂ (120W 250° Low Stress)

SiN (100% SiH₄ )

50°	100°	250°
SiN Deposition Recipe (120W 50° Low Stress)	SiN Deposition Recipe (120W 100° Low Stress) SiN Comparison Table 120W-100(250)C	SiN Deposition Recipe (120W 250° Low Stress) SiN Comparison Table 120W, 100(250)C
SiN Deposition Recipe (50W 50° Medium Stress)	SiN Deposition Recipe (50W 100° Medium Stress) SiN Comparison Table 50W, 100(250)C SiN SEM sidewall coverage	SiN Deposition Recipe (50W 250° Medium Stress) SiN ComparisonTable 50W, 100(250)C

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

50°	100°	250°
SiO₂ Deposition Recipe (5W 50°)	SiO₂ Deposition Recipe (5W 100°) SiO₂ film Unaxis ICP vs PECVD I SiO₂ SEM pictures 100C	SiO₂ Deposition Recipe (5W 250°) SiO₂ film Unaxis ICP vs PECVD I

SiO₂ (2% SiH₄ - No Ar)

50°	100°	250°
SiO₂ Deposition Recipe - No Ar (50°) SiO₂ Film Properties-No Ar	SiO₂ Deposition Recipe - No Ar (100°) SiO₂ Film Properties-No Ar	SiO₂ Deposition Recipe - No Ar (250°) SiO₂ Film Properties-No Ar

SiO₂ (100% SiH₄ HDR)

50°	100°	250°
SiO₂ Deposition Recipe - HDR (50°)	SiO₂ Deposition Recipe - HDR (100°) SiO₂ Comparison Table - HDR (100°)	SiO₂ Deposition Recipe - HDR (250°) SiO₂ Comparison Table - HDR (250°)

SiO₂ (100% SiH₄ LDR)

50°	100°	250°
SiO₂ Deposition Recipe - LDR (50°)	SiO₂ Deposition Recipe - LDR (100°) SiO₂ Comparison Table - LDR (100°) SiO₂ SEM sidewall coverage	SiO₂ Deposition Recipe - LDR (250°) SiO₂ Comparison Table - LDR (250°)

Amorphous Si (100%SiH₄ Ar He)

90°	250°
a-Si Deposition Recipe - 90°	a-Si Deposition Recipe - 250°

@@ Line 24: / Line 24: @@
 =[[PECVD 2 (Advanced Vacuum)]]=
-== SiN deposition (PECVD #2)  ==
-*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]]
-*[[media:ADV PECVD NITRIDE2-Data April 2014.pdf|Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)]]
-*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
-*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014]
-*Deposition Rate: ≈ 9.0 nm/min
-*Refractive Index: ≈ 1.952
-*Stress ≈ 484MPa
 == SiO<sub>2</sub> deposition (PECVD #2)  ==
 *[[media:Advanced PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]]
@@ Line 40: / Line 30: @@
 *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014]
+== SiN deposition (PECVD #2)  ==
-*Deposition Rate: ≈ 28.0 nm/min
+*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]]
-*Refractive Index: ≈ 1.472
+*[[media:ADV PECVD NITRIDE2-Data April 2014.pdf|Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)]]
-*Stress ≈ -270MPa
+*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014]
+*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014]
 ==LS SiN deposition (PECVD #2)  ==
@@ Line 51: / Line 43: @@
 *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014]
-*Deposition Rate: ≈ 8.34 nm/min
-*Refractive Index: ≈ 1.932
-*Stress ≈ -45MPa
 == Amorphous-Si deposition (PECVD #2)  ==

PECVD Recipes: Difference between revisions

Revision as of 18:47, 9 January 2015

Contents

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO₂ deposition (PECVD #1)

SiO_xN_y deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO₂ deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH₄)

SiN (2% SiH₄ - No-Ar)

SiN (2% SiH₄ - No-Ar - Extra N₂)

SiN (100% SiH₄ )

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

SiO₂ (2% SiH₄ - No Ar)

SiO₂ (100% SiH₄ HDR)

SiO₂ (100% SiH₄ LDR)

Amorphous Si (100%SiH₄ Ar He)

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PECVD Recipes: Difference between revisions

Revision as of 18:47, 9 January 2015

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)

SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiO2 deposition (PECVD #2)

SiN deposition (PECVD #2)

LS SiN deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

SiN (2% SiH4 - No-Ar)

SiN (2% SiH4 - No-Ar - Extra N2)

SiN (100% SiH4 )

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

SiO2 (2% SiH4 - No Ar)

SiO2 (100% SiH4 HDR)

SiO2 (100% SiH4 LDR)

Amorphous Si (100%SiH4 Ar He)

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SiO₂ deposition (PECVD #1)

SiO_xN_y deposition (PECVD #1)

SiO₂ deposition (PECVD #2)

SiN (2% SiH₄)

SiN (2% SiH₄ - No-Ar)

SiN (2% SiH₄ - No-Ar - Extra N₂)

SiN (100% SiH₄ )

SiO₂ deposition (Unaxis VLR)

SiO₂ (2% SiH₄)

SiO₂ (2% SiH₄ - No Ar)

SiO₂ (100% SiH₄ HDR)

SiO₂ (100% SiH₄ LDR)

Amorphous Si (100%SiH₄ Ar He)