Automated Wafer Cleaver (Loomis LSD-155LT): Difference between revisions

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*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
*Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.
*Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.
**Thinning the substrate allows for much easier cleaving and cleave lines closer together.


==Operating Procedures==
==Operating Procedures==
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*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''
*Recipes > Packaging > '''[[Wafer Cleaver Recipes (LSD-155LT)]]'''
*Wafer thinning is critical, see the Wafer Lapping (Allied XYZ) tool as well.
*Wafer thinning is critical, see the [[Mechanical Polisher (Allied)|Wafer Lapping (Allied 10-1110)]] tool as well.

Latest revision as of 00:24, 4 September 2024

Automated Wafer Cleaver (Loomis LSD-155LT)
IMG 0554.jpg
Location Backend Lab: ESB 1111
Tool Type Packaging
Manufacturer Loomis Industries Inc.
Model LSD-155LT
Description Loomis Automated Wafer Cleaver
Primary Supervisor Aidan Hopkins
(805) 893-2343
hopkins@ece.ucsb.edu
Materials III-V's, thin Silicon
Recipes


About

The Loomis LSD-155Lt is a production scribe and break system that can be used for processing large grids, arrays of laser bars, cleaving high quality mirror facets, and dicing wafers.

Detailed Specifications

  • Maximum Wafer Size: 4"
  • Parts mounted to low tack tape and used in conjunction with 6" plastic rings.
  • Automated cut maps at multiple angles (0° and 90° typical)
  • ~few micron alignment to on-wafer features.
  • Multiple scribe and cleave options including 'scribe and break', 'notch and cleave', and 'peck and cleave'.
  • Users should try and follow the 3 to 1 ratio (distance between cleaves should be 3X the thickness of the substrate) although some material like InP and GaAs can occasionally be cleaved closer to 2 to 1.
    • Thinning the substrate allows for much easier cleaving and cleave lines closer together.

Operating Procedures

Recipes

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