Sputtering Recipes

Back to Vacuum Deposition Recipes.

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe

Sputter 3 Process Table

Material	Etchant	Rate (nm/min)	Anisotropy	Selective to	Selectivity	Ref.	Notes	Confirmed by	Extra column
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	HCl:H3PO4(1:3)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAs	High	Lamponi (p.102)	Example	Jon Doe	Example
InP	H3PO4:HCl(3:1)	~1000	Highly	InGaAsP	High	Lamponi (p.102)	Example	Jon Doe	Example

Ni and Ta Deposition (Sputter 3)

• Ni and Ta Deposition Recipe

Sputter 4 (AJA ATC 2200-V)

W Deposition (Sputter 4)

• W Deposition Recipe

Ion Beam Deposition (Veeco NEXUS)

IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.

All users are required to enter their calibration deps (simple test deps only)

SiO₂ deposition (IBD)

• Refractive Index: ≈1.485
• Rate: ≈6.1nm/min (users must calibrate this prior to critical deps)
• Stress ≈ -320MPa (compressive)

• Recipe: SiO₂_dep

Si₃N₄ deposition (IBD)

• Refractive Index ≈ 2.01
• Rate ≈ 4.5nm/min (users must calibrate this prior to critical deps)
• Stress ≈ -1756MPa (compressive)

• Recipe: SiN_dep
• SiN Film Data (IBD)
• SiN Recipe Details (IBD)

Ta₂O₅ deposition (IBD)

• Refractive Index ≈ 2.10
• Rate ≈7.8nm/min (users must calibrate this prior to critical deps)
• Stress ≈ -140MPa (compressive)

• Recipe: Ta₂O₅_dep

TiO₂ deposition (IBD)

• Refractive Index ≈ 2.3-2.4
• Rate ≈ 1.8nm/min
• Recipe: TiO₂_dep