PECVD Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Content deleted Content added
Biljana (talk | contribs)
Biljana (talk | contribs)
Line 15: Line 15:
*[[media:PECVD1 SiO2 Data-March 2014 SiO2 Data.pdf|SiO<sub>2</sub> Data (Deposition rate, Refractive Index, Stress, HF etch rate)]]
*[[media:PECVD1 SiO2 Data-March 2014 SiO2 Data.pdf|SiO<sub>2</sub> Data (Deposition rate, Refractive Index, Stress, HF etch rate)]]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGtRLWROZGFONTBpLVBNRGQyU3Mxa2c&usp=drive_web#gid=sharing SiO<sub>2</sub> 1000A Thickness uniformity 2014]
*{https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c#gid=sharing SiO<sub>2</sub>PECVD1 SiO2 Data March 2014]


*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDkyQmFVXzQxbEJPRnFwNWlyVURwbGc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data March 2014]
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDkyQmFVXzQxbEJPRnFwNWlyVURwbGc&usp=drive_web#gid=sharing SiO<sub>2</sub> Data March 2014]



Revision as of 00:22, 22 March 2014

Back to Vacuum Deposition Recipes.

PECVD 1 (PlasmaTherm 790)

SiN deposition (PECVD #1)

SiO2 deposition (PECVD #1)


SiOxNy deposition (PECVD #1)

PECVD 2 (Advanced Vacuum)

SiN deposition (PECVD #2)

SiO2 deposition (PECVD #2)

Amorphous-Si deposition (PECVD #2)

ICP-PECVD (Unaxis VLR)

SiN deposition (Unaxis VLR)

SiN (2% SiH4)

50° 100° 250°

SiN (2% SiH4 - No-Ar)

50° 100° 250°

SiN (2% SiH4 - No-Ar - Extra N2)

50° 100° 250°

SiN (100% SiH4 )

50° 100° 250°

SiO2 deposition (Unaxis VLR)

SiO2 (2% SiH4)

50° 100° 250°

SiO2 (2% SiH4 - No Ar)

50° 100° 250°

SiO2 (100% SiH4 HDR)

50° 100° 250°

SiO2 (100% SiH4 LDR)

50° 100° 250°

Amorphous Si (100%SiH4 Ar He)

90° 250°