Sputtering Recipes

Back to Vacuum Deposition Recipes.

Sputter 2 (SFI Endeavor)

Al Deposition (Sputter 2)

• Al Deposition Recipe

AlN_x Deposition (Sputter 2)

• AlN_x Deposition Recipe

Au Deposition (Sputter 2)

• Au Deposition Recipe

TiO₂ Deposition (Sputter 2)

• TiO2₂ Deposition Recipe

Sputter 3 (AJA ATC 2000-F)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
Ni	5	150	0	20	25	0	0	44-4	5.23	-	-	-	-	yes	Ning
Ni	5	150	0	20	25	0	0	25-9	1.82	-	-	-	-	yes	Ning
Ni	5	75	0	20	25	0	0	44-4	2.50	-	-	-	-	yes	Ning
Ta	5	150	0	20	25	0	0	44-4	9.47	-	-	-	-	yes	Ning
Ta	5	75	0	20	25	0	0	44-4	5.03	-	-	-	-	yes	Ning
SampleClean-NativeSiO2	10	0	18	20	25	0	0	44-4	-	-	-	-	-	yes	150Volts 5 min

Ni and Ta Deposition (Sputter 3)

• Ni and Ta Deposition Recipe

Sputter 4 (AJA ATC 2200-V)

The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.

Material	P(mT)	Pow(W)	Sub(W)	T(C)	Ar	N2	O2	Height-Tilt	Rate(nm/min)	Stress(MPa)	Rs(uOhm-cm)	n@633nm	k@633nm	Data Below	Comment
W	3	300	0	50	45	0	0	H2.75-T5	11.5	-150 to 150	11	-	-	Yes	Jeremy Watcher
TiW	4.5	300	0	75	45	0	0	H2.75-T5	9.5	-150 to 150	60	-	-	Yes	10%Ti by Wt
TiN	4	250	0	250	20	10	0	H2.00-T7	1.9	-	-	-	-	No
Nb	4	250	0	20	30	0	0	H2.00-T7	7.5	-	-	-	-	No

W-TiW Deposition (Sputter 4)

• W-TiW Deposition Recipe

Ion Beam Deposition (Veeco NEXUS)

IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.

All users are required to enter their calibration deps (simple test deps only)

SiO₂ deposition (IBD)

• SiO₂ Standard Recipe
• SiO₂ Data August 2014
• SiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 5.63 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~434nm/min
• Stress ≈ -420MPa (compressive)
• Refractive Index: ≈ 1.486
• [Cauchy Parameters] (350-2000nm):
  • A = 1.480
  • B = 0.00498
  • C = -3.2606e-5

Si₃N₄ deposition (IBD)

• Si₃N₄ Standard Recipe
• Si₃N₄ Data August 2014
• Si₃N₄ Thickness uniformity 2014

• Deposition Rate: ≈ 4.13 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~11nm/min
• Stress ≈ -1618MPa (compressive)
• Refractive Index: ≈ 1.970
• [Cauchy Parameters] (350-2000nm):
  • A = 2.000
  • B = 0.01974
  • C = 1.2478e-4

Ta₂O₅ deposition (IBD)

• Ta₂O₅ Standard Recipe
• Ta₂O₅ Data August 2014
• Ta₂O₅ Thickness uniformity 2014

• Deposition Rate: ≈ 8.42 nm/min (users must calibrate this prior to critical deps)
• HF e.r.~1 nm/min
• Stress ≈ -233MPa (compressive)
• Refractive Index: ≈ 2.172
• [Cauchy Parameters] (350-2000nm):
  • A = 2.1123
  • B = 0.018901
  • C = -0.016222

TiO₂ deposition (IBD)

• TiO₂ Standard Recipe
• TiO₂ Data August 2014
• TiO₂ Thickness uniformity 2014

• Deposition Rate: ≈ 1.38 nm/min (users must calibrate this prior to critical deps)
• HF etch rate ~7nm/min
• Stress ≈ -442MPa (compressive)
• Refractive Index: ≈ 2.345
• [Cauchy Parameters] (350-2000nm):
  • A = 2.435
  • B = -4.9045e-4
  • C = 0.01309
• Absorbing < ~350nm