PECVD Recipes
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN Data (Deposition rate, Refractive index, Stress, HF etch rate)
- SiN 1000A Thickness uniformity 2014
- SiN Data March 2014
SiO2 deposition (PECVD #1)
- SiO2 Deposition Recipe
- SiO2 Data (Deposition rate, Refractive Index, Stress, HF etch rate)
- SiO2 1000A Thickness uniformity 2014
- {https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c#gid=sharing SiO2PECVD1 SiO2 Data March 2014]
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiN deposition (PECVD #2)
SiO2 deposition (PECVD #2)
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
| 50° | 100° | 250° |
|---|---|---|
SiN (2% SiH4 - No-Ar - Extra N2)
| 50° | 100° | 250° |
|---|---|---|
SiN (100% SiH4 )
| 50° | 100° | 250° |
|---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (2% SiH4 - No Ar)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 HDR)
| 50° | 100° | 250° |
|---|---|---|
SiO2 (100% SiH4 LDR)
| 50° | 100° | 250° |
|---|---|---|
Amorphous Si (100%SiH4 Ar He)
| 90° | 250° |
|---|---|