This table can be used to help located the needed recipe.

Table (This heading is temporary)

Vacuum Deposition Recipes
	E-Beam Evaporation				Sputtering					Thermal Evaporation		Plasma Enhanced Chemical Vapor Deposition (PECVD)			Atomic Layer Deposition	Ion-Beam Deposition (IBD)	Molecular Vapor Deposition
Material	E-Beam 1 (Sharon)	E-Beam 2 (Custom)	E-Beam 3 (Temescal)	E-Beam 4 (CHA)	Sputter 1 (Custom)	Sputter 2 (SFI Endeavor)	Sputter 3 (ATC 2000-F)	Sputter 4 (ATC 2200-V)	Sputter 5 (Lesker AXXIS)	Thermal Evap 1	Thermal Evap 2 (Solder)	PECVD 1 (PlasmaTherm 790)	PECVD 2 (Advanced Vacuum)	Unaxis VLR ICP-PECVD
Ag
Al
Al₂O₃
AlN
Au
B
Co
Cr
Cu
Fe
Ge
Hf
HfO₂
In
Ir
ITO
Mo
Nb
Ni
Pd
Pt
Ru
Si
SiN												Y	Y
SiO₂												Y	Y
SiO_xN_y
Sn
SrF₂
Ta
Ta₂O₅
Ti
TiN
TiO₂
V
W
Zn
ZnO₂
Zr
ZrO₂
Material	E-Beam 1 (Sharon)	E-Beam 2 (Custom)	E-Beam 3 (Temescal)	E-Beam 4 (CHA)	Sputter 1 (Custom)	Sputter 2 (SFI Endeavor)	Sputter 3 (ATC 2000-F)	Sputter 4 (ATC 2200-V)	Sputter 5 (Lesker AXXIS)	Thermal 1	Thermal 2	PECVD 1 (PlasmaTherm 790)	PECVD 2 (Advanced Vacuum)	Unaxis VLR ICP-PECVD	Atomic Layer Deposision	Ion Beam Deposition	Molecular Vapor Deposition

Sputtering

Clean (30CLN_SN)
1. Initial t=10", p=2x10-2, T=250C
2. N₂ Purge t=30", p=300mT
3. evacuate, base pressure=2x10-2, t=10"
4. loop
5. gas stabilization, t=30"
6. etch chamber, t=30'
7. evacuate, t=10"
8. N₂ purge
9. evacuate
10. loop
11. SiN gas stabilization
12. SiN deposition( 200A coat)
13. evacuate
14. N₂ purge, t=30"
15. end
SiN deposition (SiN_10) 130.8 A/min
1. Initial t=10"
2. N₂ purge t=30"
3. evacuate, t=10"
4. loop
5. SiN gas stabilization, t=30"
6. SiN deposition t=8'11.2"
7. evacuate, t=10"
8. N₂ purge t=30"
9. evacuate t=10"
10. loop

Clean (30CLN_SN)
1. Initial t=10", p=2x10-2, T=250C
2. N₂ Purge t=30", p=300mT
3. evacuate, base pressure=2x10-2, t=10"
4. loop
5. gas stabilization, t=30"
6. etch chamber, t=30'
7. evacuate, t=10"
8. N₂ purge
9. evacuate
10. loop
11. SiO₂ gas stabilization
12. SiO₂ deposition( 200A coat)
13. evacuate
14. N₂ purge, t=30"
15. end
SiO₂ deposition (SiO2_10) 440.5 A/min
1. Initial t=10"
2. N₂ purge t=30"
3. evacuate, t=10"
4. loop
5. SiO₂ gas stabilization, t=30"
6. SiO₂ deposition t=8'11.2"
7. evacuate, t=10"
8. N₂ purge t=30"
9. evacuate t=10"
10. loop

Standard clean
1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
Nitride 2 (HF, n=2.0, 93nm/min)
1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=1040, N2(3)=980, NH3(2)=17

Standard clean
1. Pump down: stabilization time t=15", step time(m)=0', step time(s)=30"
2. Pre-purge: purge=1, stabilization time=15, step time(m)=1, step time(sec)=0
3. High Pressure: process pressure=600, RF point=300, stabilization time=35, step time(m)=30, step time(s)=0, CF4/O2(5)=500
4. Low pressure: process pressure=300, RF setpoint=300, stabilization time=15, step time(m)=30, step time(s)=0, CF4/O2(5)=500
Oxide (HF, n=1.46, 25nm/min)
1. process pressure=800, RF setpoint=30, stabilization time=15, step time(m)=10, step time(s)=0, 2%SiH4%He(1)=600, N2O(4)=1420