Difference between revisions of "PECVD1 Wafer Coating Process"
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+ | There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning). |
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− | The wafers are ordered from SVM. These are low particle count 4" Si wafer where particle count is very low <100. |
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+ | === Standard Si3N4 (Silicon-Nitride) Deposition === |
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− | b)Edit standard recipes (for seasoning, deposition, and cleaning). You can ONLY change the time in recipes. |
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− | * •Seasoning recipe name: |
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+ | # Seasoning |
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− | * •Deposition recipe name: |
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− | * •Cleaning recipe name: |
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+ | # Deposition |
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+ | #* Pump down. |
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+ | #* Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from [https://wiki.nanotech.ucsb.edu/wiki/PECVD_Recipes#PECVD_1_.28PlasmaTherm_790.29 historical data]. |
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+ | #* Unload the wafer. |
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+ | # Cleaning |
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+ | #* Log out |
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+ | === Standard Oxide, SiO2 (Silicon Dioxide) Deposition === |
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− | e)Pump down and load the recipe for deposition. |
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+ | #Log in to PECVD #1 |
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+ | # Seasoning |
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− | f) Edit the recipe for deposition, change the time ONLY. |
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+ | #* Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition. |
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+ | # Deposition |
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− | g) Run deposition |
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+ | #* Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving. |
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+ | #* Pump down. |
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− | h) Wait for deposition to be finished. Unload the wafer |
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+ | #* Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from [[PECVD Recipes#PECVD 1 .28PlasmaTherm 790.29|historical data]]. |
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+ | #* Unload the wafer. |
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+ | # Cleaning |
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+ | #* Wipe sidewall first with DI water, followed by IPA. |
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+ | #* Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning. |
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+ | #* Log out |
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Latest revision as of 13:16, 10 December 2020
There are two standard recipes for SiN and SiO2 deposition at 250C in PECVD#1. Instructions bellow explain how to run process (seasoning, deposition, cleaning).
Standard Si3N4 (Silicon-Nitride) Deposition
SiN Deposition
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe (SiN seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substrate (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe (SiN@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load the cleaning recipe (CH4/O2 clean). Edit the recipe and enter required time for cleaning.
- Log out
Standard Oxide, SiO2 (Silicon Dioxide) Deposition
SiO2 Deposition
- Log in to PECVD #1
- Seasoning
- Load the seasoning recipe( SiO2 seasoning), and run it. The goal of this step is to coat chamber walls and prepare it for deposition.
- Deposition
- Vent the chamber and load the substarte (place it in the center of platen). You can place small pieces around the wafer to protect it from moving.
- Pump down.
- Load the deposition recipe( SiO2@250C), and run it. Deposition time is variable. Get the rate from historical data.
- Unload the wafer.
- Cleaning
- Wipe sidewall first with DI water, followed by IPA.
- Load for cleaning recipe (CF4/O2). Edit the recipe and enter required time for cleaning.
- Log out