Difference between revisions of "PECVD 1 (PlasmaTherm 790)"

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(Changed tool supervisor.)
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|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Brian Lingg
|super= Don Freeborn
|location=Bay 3
|location=Bay 3
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|description = PECVD Plasma Therm 790 For Oxides And Nitrides
|manufacturer = Plasma-Therm
|manufacturer = Plasma-Therm
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*[[media:PECVD1 Operating Instructions.pdf|Operating Instuctions]]
*[//wiki.nanotech.ucsb.edu/w/images/d/d2/PECVD1_Operating_Instructions.pdf Operating Instuctions]

Revision as of 18:15, 20 March 2020

PECVD 1 (PlasmaTherm 790)
Tool Type Vacuum Deposition
Location Bay 3
Supervisor Don Freeborn
Supervisor Phone (805) 893-7975
Supervisor E-Mail dfreeborn@ece.ucsb.edu
Description PECVD Plasma Therm 790 For Oxides And Nitrides
Manufacturer Plasma-Therm
Vacuum Deposition Recipes
Sign up for this tool


This is a Plasma-Therm model 790 plasma enhanced chemical vapor deposition system for depositing SiO2, Si3N4, or SiOxNy dielectric films. The system uses a capacitively-coupled 13.56 MHz source excitation to produce the plasma between two parallel aluminum plates. The gas is injected over the sample through a 6” diameter showerhead. The samples are placed on the system anode (to minimize ion damage) which is heated to 250-350°C. SiO2 is produced from SiH4/He 2%/98% and N2O at 250°C. The typical deposition rate is 400 A/min. at 300 mT pressure. The typical BOE etch rate of this oxide is about 400 nm/min. Si3N4 is produced from SiH4/He 2%/98% and NH3 at 250°C or 350°C. The more dense films are produced at 350°C. The stress of the nitride can be altered by adjusting the N2:He ratio of the deposition. CF4/O2 plasmas are used to clean the chamber between depositions.

These films are typically used for capacitor dielectrics, chemical passivation layers, electrical insulators, reactive ion etching masks, and optical anti-reflective coatings. The system is fully programmable with windows-based software and has a wide array of pre-defined thicknesses. Custom programs for dielectric stacks or different process parameters can be written and saved.

Detailed Specifications

  • Gases used: NH3, N2O, 2%SiH4/He, N2,CF4 and O2
  • ~ 10mT ultimate chamber pressure
  • 13.56 Mhz excitation freq.
  • Sample size: pieces to 6” wafers
  • Automatic tuning network
  • RF Power control
  • Full computer operation
  • Standard recipes for a variety of film thicknesses