Difference between revisions of "PECVD Recipes"
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{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
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=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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| − | Note: Software upgrade performed on 2018-10-10. Note any changes in film. |
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| − | + | ===[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=1270764394 PECVD 1 Process Control Plots] - Plots of all process control data=== |
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| − | *[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates (Gain4) in PECVD#1 2016] |
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| + | ==SiO<sub>2</sub> deposition (PECVD #1)== |
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| − | *[https://docs.google.com/spreadsheets/d/1YNiof68Veeh08s_NtG5aCWUXW7GWDDU00HAimV_l8_g/edit#gid=sharing Particulates (Gain4) in PECVD#1 2017] |
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| + | *[https://docs.google.com/spreadsheets/d/1wloq6HJw5RQIvmeKcBn3xvE_917R6jF_K-btCHjsiIM/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=0 SiO<sub>2</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.231.29 SiO<sub>2</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier |
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| − | *[https://docs.google.com/spreadsheets/d/11c0gQHnattIjVO95aBqiL-zL4DInRFihV-YB54xLT40/edit#gid=sharing Particulates in PECVD1 films 2018] |
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==SiN deposition (PECVD #1)== |
==SiN deposition (PECVD #1)== |
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| + | *[https://docs.google.com/spreadsheets/d/1DGU745SeunYz4sLs1LpGKbtOYX-tQyBHEvVYcMxHRKE/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/3/32/New_PECVD1-SiO2-standard_recipe_2014_SiO2_standard_recipe.pdf SiN Standard Recipe] |
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| + | *[https://docs.google.com/spreadsheets/d/1fTDNXxpf4tgNYLIEs_jvehG1KvtXqqTRDBI7sHNAVvo/edit#gid=98787450 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Current Process Control Data</nowiki>] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEN6LV93LXlnbUhIWU1adVZWMWlXYnc&usp=drive_web#gid=sharing SiN 100nm Data 2014] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.231.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - Oct. 2021 and earlier |
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| − | *[https://docs.google.com/spreadsheets/d/1phx1WficlUEg0xSahaAq4zrRk6m9Eb0ausO8wcAmXqs/edit#gid=sharing SiN 100nm Data 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1VNSNTqnbE4SFk0HyhBAy3GJzi0jRQEs8cgk1v2_Uam8/edit#gid=sharing SiN 100nm Data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1TG1X2wpl2fWaHEtAHtpZFBVSCk1BQeGJQ8LA2M2qBJ0/edit#gid=sharing SiN 100nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1UlyvPcXUBQ5R2JwjKOjELvtCJaTElVhJHfzgjyaRd2A/edit#gid=sharing SiN 300nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1pAoTCaNSf0uZMyiQ2qKFd0s_e4e53P9Z1jUwtmTnlLk/edit#gid=sharing SiN 300nm Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1Pnw8eEaQ0rGblRYl6LeIm6wrh1hgeyjnHEbA4BzV8JM/edit#gid=sharing SiN 300nm Data 2019] |
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| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> (PECVD#1)== |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Standard Recipe</nowiki>] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dElmTXZyOEZsOFdrMVhNLWpKXzVmNWc&usp=sharing SiN 100 nm Thickness uniformity 2014] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#Low-Stress_SiN_-_LS-SiN_.28PECVD.231.29 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 1] Historical Data</nowiki>] - 2021-10 and earlier |
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| − | *[https://docs.google.com/spreadsheets/d/1-pET1Eojooso5UHk90W-5uYByDDdrCyRnggqewxTmVg/edit#gid=sharing SiN 100 nm Thickness uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1V_-KzsdR-2tSnJGtUdQWokmnNIY949t0vdQOp7RfCgc/edit#gid=sharing SiN 100 nm Thickness uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1tM-a4VBEqpxr2G8PGGLTbsR6BQBmvqXNRBw0mikAUS0/edit#gid=sharing SiN 100 nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1Z83RCH5cAUfViO6vv6hAatcLVWZ95ex4nDdfffm9I7s/edit#gid=sharing SiN 300nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1b4EQZdRtVbqNwGBrItoG5-tz6RIzlsvBiCFR6ZXfylw/edit#gid=sharing SiN 300nm Thickness uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1-OiaH8frAzJzHKfbYTJP808ddzk1Wsv_CixDzG-sSfo/edit#gid=sharing SiN 300nm Thickness uniformity 2019] |
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| + | :[[File:PECVD1 SiN Stress vs. N2 plot.jpg|alt=plot of SiN stress and Refractive Index vs. N2 flow. |none|thumb|414x414px|Example of Si<sub>3</sub>N<sub>4</sub> modified stress via. varying N<sub>2</sub> flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. ([[Demis D. John]] 2011, [https://engineering.ucsb.edu/people/daniel-blumenthal Blumenthal Group])]] |
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| − | ==SiO<sub>2</sub> deposition (PECVD #1)== |
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| + | ==SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/8/87/New_PECVD1-SiN-standard_recipe_2014_SiN_standard_recipe.pdf SiO<sub>2</sub> Standard Recipe] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEw0bjFEdTF2SUhRa25Ca0d0SzBha3c&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1JWNUcH8l90xif-0BhYKJee9nXxE4hnvvp6N2NtZLYXY/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1QbhukSuVNueT067IVEpweSlD4B7GQecf-tfQFQeV6Xs/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2019] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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| + | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] - ''Rate, Index etc.'' |
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| + | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| + | ==Standard Cleaning Procedure (PECVD #1)== |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDQ3VEtZQVRpdVdlbGtIZHpTNmFzNmc&usp=drive_web#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2014] |
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| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
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| − | *[https://docs.google.com/spreadsheets/d/1NQy-ADou6f2NBU-9jZG8KME1lOz0X5mh6HZV9_jPGes/edit#gid=sharing SiO<sub>2</sub> 100 nm Thickness uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1WUCm_dWpxKTjfFf1rNfLuxvwMxsyCYON_OZ3gb50L_s/edit#gid=sharing SiO<sub>2</sub> 100 nmThickness uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1dpC_AkPD-etIH6fVuQqLfd4UMNQCEtcqhvmBpwbEncE/edit#gid=sharing SiO<sub>2</sub> 100nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1Fa8mZIBIeJwvCwUbJ-28VcvVYj8rshhuDuXsYxA-cD8/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1YB_9USpuXGpIdSW2gNsptu5nSrLWAGsYu0SWoYEy0aQ/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1FatUAEegWuDRzVa47L1_cqgRs0AZ_Fao9jpwz5sfln0/edit#gid=sharing SiO<sub>2</sub> 300nm Thickness uniformity 2019] |
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| + | #Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. ) |
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| − | ==OTHER recipes: Low-Stress (LS) SiN and SiO<sub>x</sub>N<sub>y</sub> deposition (PECVD #1)== |
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| + | #Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning. |
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| − | <!-- Placeholders - Not uploaded yet--> |
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| + | # |
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| + | {| class="wikitable" |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/4/4a/New_PECVD1-LS_SIN-Turner05recipe_2014_LS_SIN_recipe.pdf LS SiN Standard Recipe] |
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| + | |+Table of Cleaning Times |
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| − | *[https://docs.google.com/spreadsheets/d/1Joz0az9TGZWQc4CiMQJZzLBbNFbx_hH2Oc0B4NNJmYk/edit#gid=sharing LS SiN Data 2014] |
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| + | !Film Dep'd |
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| − | *[https://docs.google.com/spreadsheets/d/1xIzc2CufRYNSfAtsOXpw3IzHreeu42BWrLBV0kzP6kA/edit#gid=sharing LS SiN 1000A Thickness uniformity 2014] |
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| + | !Cleaning Time |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/2/24/New_PECVD1-LS_SION-recipe_2014_LS_SION_recipe.pdf SiO<sub>x</sub>N<sub>y</sub> Standard Recipe] |
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| + | |- |
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| − | *[https://docs.google.com/spreadsheets/d/1rixyzAAq6q08M5OwvZiDVoh3K8B566XKM-UZAQIAnsg/edit#gid=sharing SiO<sub>x</sub>N<sub>y</sub> Data 2014] |
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| + | |SiO<sub>2</sub> |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEttR2JSTkRoamR0SUZ4bE5QUW9uS2c&usp=sharing SiO<sub>x</sub>N<sub>y</sub>1000A Thickness uniformity 2014] |
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| + | |TBD |
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| + | |- |
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| + | |Si<sub>3</sub>N<sub>4</sub> |
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| + | |TBD |
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| + | |- |
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| + | |SiOxNy |
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| + | |Same as XYZ |
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| + | |} |
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| + | # |
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| − | =[[PECVD 2 (Advanced Vacuum)]]= |
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| + | ===[https://wiki.nanotech.ucsb.edu/w/images/7/72/PECVD1-cleaning.png Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"]=== |
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| − | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015] |
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| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that '''it will pop up a window for the cleaning time''' upon running the recipe - you do not need to edit the recipe before running it. |
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| − | *[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
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| + | |||
| − | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017] |
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| + | =[[PECVD 2 (Advanced Vacuum)]]= |
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| − | + | ===[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=272916741 PECVD 2 Process Control Plots] - Plots of all process control data=== |
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| − | *[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1aU6fTyQ5MlGD4uCa9gepG5rLJzW3wlkOWSKEl_w_Ye4/edit#gid=sharing Particulates in PECVD#2 films 2019] |
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==SiO<sub>2</sub> deposition (PECVD #2)== |
==SiO<sub>2</sub> deposition (PECVD #2)== |
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| + | *[https://docs.google.com/spreadsheets/d/1wCEcFj6ZMHR4QifngLXwz6dqbyf8hsVKu7bQbMS6EoA/edit#gid= SiO<sub>2</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''STD SiO2''" |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dGJZaGtDTVRqa1BRdW5iU1N1Y01jd0E&usp=drive_web#gid=sharing Oxide Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/ |
+ | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=1313651154 SiO<sub>2</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_deposition_.28PECVD_.232.29 SiO<sub>2</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
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| − | *[https://docs.google.com/spreadsheets/d/1XQRcTJdw9AIMPAUsH0n9Ic9Fe1_xGDSvAxD4gVc9FBw/edit#gid=sharing Oxide data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1vcaHwraMGNHuRxgWwGp78EJf4T3Jk182wxoCz_neuck/edit#gid=sharing Oxide Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1VI-sUmaqois0NsCvf2kQmPfRRa03MjBzl779hmmLtP4/edit#gid=sharing Oxide Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1oWnQ3D6oknKWU2bohvSrN85rlEZgQN3YP_ZJ4i8u7do/edit#gid=1 Oxide Data 2019] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness Uniformity 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/16pZHcGwesXB1mMPwntOudBIlPvRh6A6DI37DEwyYfPw/edit#gid=sharing Oxide Thickness Uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/10OEuANVNmHqWvx-92zibechIrHK5kgqSK4B_O_O3-YI/edit#gid=sharing Oxide Thickness Uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/19JjJYdFNFzO685Hp9hODVRFAYF5bP3IEYGTRGQjqLN4/edit#gid=sharing Oxide Thickness Uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1064j6894X63WlRX3Uolxg1q1FRzUZLqSZQA9BWwzPOk/edit#gid=sharing Oxide Thickness Uniformity 2019] |
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| + | ==SiN deposition (PECVD #2)== |
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| + | *[https://docs.google.com/spreadsheets/d/1KS4HfhUJyYVep4H6CRAKpMRP5TA31F0qD-obQkKRnEI/edit#gid= Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''Nitride2''" |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/8/8d/New_Adv_PECVD_OXIDE_300C_standard_recipe_OXIDE_Standard_Recipe.pdf Oxide Standard Recipe 2014-5/9/18] |
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| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=773875841 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
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| − | *[//www.nanotech.ucsb.edu/wiki/images/b/b0/STD_SiO2_5-9-18.pdf STD SiO2 5/9/18] |
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| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_deposition_.28PECVD_.232.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data</nowiki>] - Before Oct. 2021 |
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| − | ==SiN deposition (PECVD #2)== |
+ | ==Low-Stress SiN deposition (PECVD #2)== |
| + | ''Low-Stress Silicon Nitride, Si<sub>3</sub>N<sub>4</sub> (< ±100 MPa)'' |
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| + | *[https://docs.google.com/spreadsheets/d/1DzzI7aE61R7c6gyk6cGBdm9FtGrApiNJ4AL90ll2C8k/edit#gid= Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Standard Recipe</nowiki>] - "''LSNitride2'' |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/1SkYqOwgjUyMaFBPhuTjMvBTXu0KdQFNmITryF_OVi8o/edit#gid=sharing Nitride2 Data 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1HJszgZyEZR9ZsiJpQM6pdsoQ6pWwI6brXasdmfDRoBQ/edit#gid=sharing Nitride2 Data 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1f3JBEnr7lf0yIMlzlOYKv_bXlIDyXt8vec_rSVJIoOk/edit#gid=sharing Nitride2 Data 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1OO0ewGSqYSzL3lj8fXkgckTkBGQRliD6sBc02IW7wZY/edit#gid=sharing Nitride2 Data 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1Zi8CRspd3LTDdNRRCneE0--bVohWvZbV_kSHo04s0oI/edit#gid=1 Nitride2 Data 2019] |
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| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness Uniformity 2014] |
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| − | *[https://docs.google.com/spreadsheets/d/14_dYQu3z31fF_oxsUUX8BmDucgv6B07xB3_zqP0HmvM/edit#gid=sharing Nitride2 Thickness Uniformity 2015] |
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| − | *[https://docs.google.com/spreadsheets/d/1qBHs7uALM2OdE-yXOq4uZk6aUQEjZRjG1C6RcMEf0sk/edit#gid=sharing Nitride2 Thickness Uniformity 2016] |
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| − | *[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
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| − | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
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| − | *[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2019] |
||
| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=584923738 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Current Process Control Data</nowiki>] |
||
| + | *[https://docs.google.com/spreadsheets/d/1iSW1eAAg824y9PYYLG9aiaw53PEJ-f9ofylpVlCDq9Y/edit#gid=203400760 Plots of Low-Stress Si<sub>3</sub>N<sub>4</sub> Process Control Data] |
||
| + | *[[Old Deposition Data - 2021-12-15#Low-Stress SiN deposition .28PECVD .232.29|Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [PECVD 2] Historical Data - Before Oct. 2021</nowiki>]] |
||
| + | *:''Old Versions of the recipe:'' |
||
| + | *:''[https://wiki.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018]'' |
||
| + | *:''[https://wiki.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018]'' |
||
| + | ==Amorphous-Si deposition (PECVD #2)== |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/4/4c/SiNx_Films_by_PECVD2.pdf SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Film Characterization and Stress] |
||
| + | ==Standard Cleaning Procedure (PECVD #2)== |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/e/e1/New_Adv_PECVD-Nitride2_300C_standard_recipe_Nitride2_Standard_Recipe.pdf Nitride2 Standard Recipe 2014-5/9/2018] |
||
| + | The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps: |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/5/52/STD_Nitride_5-9-18_Dep.recipe.pdf STD Nitride2 Standard Recipe 5/9/2018] |
||
| + | #(If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again. |
||
| − | ==Low-Stress SiN deposition (PECVD #2)== |
||
| + | #Load the recipe for cleaning "STD CF<sub>4</sub>/O<sub>2</sub> Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning. |
||
| − | Low-Stress SilIcon Nitride (< 100 MPa) |
||
| + | ===[https://wiki.nanotech.ucsb.edu/w/images/3/34/PECVD2_photo_for_cleaning.png Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"]=== |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dEZvWVhzS1pHUXZkOGcyQWZ4LTNBWGc&usp=drive_web#gid=sharing LS Nitride2 Data 2014] |
||
| + | Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it. |
||
| − | *[https://docs.google.com/spreadsheets/d/16Q6BrPoNiFP0elVoSGwXRfQdHXzAXOgiyqKmEw-4kII/edit#gid=sharing LS Nitride2 Data 2015] |
||
| − | *[https://docs.google.com/spreadsheets/d/1GZ58eFzD-T8DJ2Nsaj74u6cvawzsOI2DmMit6Z7vqys/edit#gid=sharing LS Nitride2 Data 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1gGIWqkCnykPgBc3prhXExT7QcNjWm2HdbTtwugNqm18/edit#gid=sharing LS Nitride2 Data 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/1vwpDtiglR2DLWiYNhpBX77cyyj9lw55iVeFz1puN7bM/edit#gid=sharing LS Nitride2 Data 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/1zvSl2P5T926Ol48yH3FBCZm1zCeycl3S8GWQYtzi8VI/edit#gid=sharing LS Nitride2 Data 2019] |
||
| − | *[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness Uniformity 2014] |
||
| − | *[https://docs.google.com/spreadsheets/d/1LpkaOpr7oNoyvxFkineD7i9FspO6LweJMulvZHJM5Zc/edit#gid=sharing LS Nitride2 Thickness Uniformity 2015] |
||
| − | *[https://docs.google.com/spreadsheets/d/1FRzW9BaIPF2D3cxPgjLq8hbvrBHXDNkiW6DiPVKQBRM/edit#gid=sharing LS Nitride2 Thickness Uniformity 2016] |
||
| − | *[https://docs.google.com/spreadsheets/d/1vyrgvdEZFgnQUilpa5Ka2nOfowY8zlmJfbQ77EamNBg/edit#gid=sharing LS Nitride2 Thickness Uniformity 2017] |
||
| − | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2018] |
||
| − | *[https://docs.google.com/spreadsheets/d/17OGrhbvP8O_0mBMIsmUmEwfyFaoJnNNpMFpgBUW7qzI/edit#gid=sharing LS Nitride2 Thickness Uniformity 2019] |
||
| + | '''Clean Times (PECVD#2''') |
||
| + | {| class="wikitable" |
||
| + | !Film Deposited |
||
| + | !Cleaning Time (Dry) |
||
| + | |- |
||
| + | |SiO<sub>2</sub> |
||
| + | |1 min. clean for every 1 min. deposition |
||
| + | |- |
||
| + | |Si<sub>3</sub>N<sub>4</sub> |
||
| + | |1 min. clean for every 7 min of deposition |
||
| + | |- |
||
| + | |If > 29min total dep time |
||
| + | (Season + Dep) |
||
| + | |Wet Clean the Upper Lid/Chamber |
||
| + | DI water then Isopropyl Alcohol on chamber wall & portholes |
||
| + | |} |
||
| + | =[[ICP-PECVD (Unaxis VLR)]]= |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/a/a5/New_AdvPECVD-LS_Nitride2_300C_standard_recipe_LS_Nitride2_standard_recipe.pdf LS Nitride2 Standard Recipe 2014-5/9/2018] |
||
| + | 2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the [[ICP-PECVD (Unaxis VLR)#Documentation|new procedures]] to ensure low particle counts in the chamber. |
||
| + | The system currently has '''Deuterated Silane (SiD<sub>4</sub>)''' installed - identical to the regular Silicon precursor SiH<sub>4</sub>, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films. |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/0/01/STD_LSNitride2_5-9-18.pdf STD LSNitride2 5/9/2018] |
||
| + | ==Process Control Data (Unaxis ICP-PECVD)== |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/9/98/STD_LSNitride2_12-14-18_recipe.pdf STD LSNitride2 12/14/2018] |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=417334948 ICP-PECVD Process Control Plots] - ''Plots of all Process Control data'' |
||
| − | ==Amorphous-Si deposition (PECVD #2)== |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub>] |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub>] |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub>] |
||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub>] |
||
| + | ==Low Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/9/9d/03-Amorphous-Si-PECVD-2.pdf Amorphous Si Deposition Recipe] |
||
| − | *[//www.nanotech.ucsb.edu/wiki/images/0/09/ASi_deposition_and_film_stress_using_AV_dep_tool.pdf Amorphous Si Films and Their Stress] |
||
| + | *[https://docs.google.com/spreadsheets/d/17ft9jrHcCFCp2830RsLwQq5lHuupWATXT91SreG8WYY/edit#gid=143856038 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 LDR250C''" |
||
| − | =[[ICP-PECVD (Unaxis VLR)]]= |
||
| + | **[https://docs.google.com/spreadsheets/d/1wocoCPOOEDQcZbXJJNaZs1sr9dXBZpn1wUyglL8IQrI/edit#gid=1199123007 Old Recipe] - |
||
| − | ==SiN deposition (Unaxis VLR)== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=0 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Process Control Data</nowiki>] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_LDR_250C_Deposition_.28Unaxis_VLR.29 Low Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021 |
||
| + | |||
| + | ==High Deposition Rate SiO<sub>2</sub> [ICP-PECVD]== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/13KUlUujEWSLOH54Ibd52YNJPZcAc7ELShI2RAqM6H-Y/edit#gid=117484667 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiO2 HDR250C''" |
||
| + | **[https://docs.google.com/spreadsheets/d/1OxHi5r9ifNvF8ODpIk6aoRevb4RdbbykwPVMm1g-yi4/edit#gid=1199123007 Old Recipe] |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1459210138 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiO2_HDR_250C_Deposition_.28Unaxis_VLR.29 High Deposition Rate SiO<sub>2</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] |
||
| + | |||
| + | ==Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1MffAE2S-Sga0o4botssPMi_P8C2ghxw4XiHwTnOn95Q/edit#gid=1111781219 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN 250C''" |
||
| + | **[https://docs.google.com/spreadsheets/d/1VrgS0cB2OcdZVTCnDAesgQCLRaAgEB_Iajc_OrhXOo0/edit#gid=1199123007 Old Recipe] |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1670372499 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
||
| + | *[https://wiki.nanotech.ucsb.edu/wiki/Old_Deposition_Data_-_2021-12-15#SiN_250C_deposition_.28Unaxis_VLR.29 Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Historical Data</nowiki>] - before Oct. 2021 |
||
| + | |||
| + | ==Low Stress Si<sub>3</sub>N<sub>4</sub> [ICP-PECVD]== |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1JuQlCU-mozIUJx9z9aQdisIJyFhv1r9AWI8EWeOnsPo/edit#gid=82816489 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Standard Recipe</nowiki>] - "''SiN Low Stress 250C''" |
||
| + | **[https://docs.google.com/spreadsheets/d/1i2mE2K12EEulnCbO9KuU9PCcvHAmcGxTIXUF8x4IOWk/edit#gid=1199123007 Old Recipe] |
||
| + | |||
| + | *[https://docs.google.com/spreadsheets/d/1CuDMKFTTzGLL6CP-FEI_9cOnUaIw-432ppDFssB59wY/edit#gid=1517031044 Low Stress Si<sub>3</sub>N<sub>4</sub><nowiki> [ICP-PECVD] - Current Process Control Data</nowiki>] |
||
| + | |||
| + | ==Standard Cleaning Procedure [ICP-PECVD]== |
||
| + | You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the [[ICP-PECVD (Unaxis VLR)#Documentation|Operating Procedure on the Unaxis Tool Page]] for details. |
||
| + | |||
| + | *SiNx etches at 20nm/min |
||
| + | *SiO<sub>2</sub> etches at 40nm/min |
||
| + | ===Standard Clean Recipe=== |
||
| − | *[https://docs.google.com/spreadsheets/d/1hlNqtvKXKCD6aI8tnMx9dMTTiANM3pK7U9dtCtnDh-0/edit#gid=sharing SiN 100C 300nm Data-2019] |
||
| + | ''To Be Added'' |
||
| − | *[https://docs.google.com/spreadsheets/d/1uIhx-TD11lDSjpCyPtgKC_CmuNWKLx6iLl5PJgVDt30/edit#gid=sharing Thickness Uniformity SiN 100C 300nm-2019] |
||
| − | == |
+ | ==General Recipe Notes (Unaxis VLR ICP-PECVD)== |
| + | *RF1 = Bias |
||
| − | *[https://docs.google.com/spreadsheets/d/1UXjhMJGOYDNJUOkgAoDUbfbAOjmQp163JLs5FvgNevM/edit#gid=sharing SiO2 LDR 100C 300nm Data-2019] |
||
| + | *RF2 = ICP Power |
||
| − | *[https://docs.google.com/spreadsheets/d/1ZAdNJH_N4FUuBQphB0qVnKHCM8Nwzv9tP32eDj-MIyE/edit#gid=sharing SiO2 HDR 100C 300nm Data-2019] |
||
| + | *All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation. |
||
| − | *[https://docs.google.com/spreadsheets/d/1tRuq4afSwd5DnhAnzIBvnrCy_n0v3q3IDa78bxCEeFI/edit#gid=sharing Thickness Uniformity for SiO2 LDR 100C 300nm-2019] |
||
| + | *Maximum SiO<sub>2</sub> Dep. thickness allowed: 800nm |
||
| − | *[https://docs.google.com/spreadsheets/d/1y4mpR4i0gbzSNRbSYGASVSms36FuPh-jDnS3v82OEII/edit#gid=sharing Thickness Uniformity for SiO2 HDR 100C 300nm-2019] |
||
| + | **Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer. |
||
Latest revision as of 10:55, 2 June 2023
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
PECVD 1 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #1)
- SiO2 [PECVD 1] Current Process Control Data
- SiO2 [PECVD 1] Historical Data - Oct. 2021 and earlier
SiN deposition (PECVD #1)
- Si3N4 [PECVD 1] Standard Recipe
- Si3N4 [PECVD 1] Current Process Control Data
- Si3N4 [PECVD 1] Historical Data - Oct. 2021 and earlier
Low Stress Si3N4 (PECVD#1)
- Low Stress Si3N4 [PECVD 1] Standard Recipe
- Low Stress Si3N4 [PECVD 1] Historical Data - 2021-10 and earlier
Example of Si3N4 modified stress via. varying N2 flow. Refractive index is relatively constant (one outlier), and stress varies continuously from tensile to compressive. (Demis D. John 2011, Blumenthal Group)
SiOxNy deposition (PECVD #1)
- SiOxNy Standard Recipe
- SiOxNy Data 2014 - Rate, Index etc.
- SiOxNy1000A Thickness uniformity 2014
Standard Cleaning Procedure (PECVD #1)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- Wet cleaning (start cleaning by using a cleanroom wipe sprayed with DI. Wipe chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA. )
- Load the recipe for cleaning "CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding a required time for cleaning.
| Film Dep'd | Cleaning Time |
|---|---|
| SiO2 | TBD |
| Si3N4 | TBD |
| SiOxNy | Same as XYZ |
Standard Cleaning Recipe (PECVD#1): "CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
PECVD 2 (Advanced Vacuum)
PECVD 2 Process Control Plots - Plots of all process control data
SiO2 deposition (PECVD #2)
- SiO2 [PECVD 2] Standard Recipe - "STD SiO2"
- SiO2 [PECVD 2] Current Process Control Data
- SiO2 [PECVD 2] Historical Data - Before Oct. 2021
SiN deposition (PECVD #2)
- Si3N4 [PECVD 2] Standard Recipe - "Nitride2"
- Si3N4 [PECVD 2] Current Process Control Data
- Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
Low-Stress SiN deposition (PECVD #2)
Low-Stress Silicon Nitride, Si3N4 (< ±100 MPa)
- Low Stress Si3N4 [PECVD 2] Standard Recipe - "LSNitride2
- Low Stress Si3N4 [PECVD 2] Current Process Control Data
- Plots of Low-Stress Si3N4 Process Control Data
- Low Stress Si3N4 [PECVD 2] Historical Data - Before Oct. 2021
- Old Versions of the recipe:
- LS Nitride2 Standard Recipe 2014-5/9/2018
- STD LSNitride2 5/9/2018
Amorphous-Si deposition (PECVD #2)
Standard Cleaning Procedure (PECVD #2)
The cleaning procedure is very important in order to have consistent result on this tool and also to keep particulate count low. After each deposition you should clean the tool following instructions carefully. The clean is done in two steps:
- (If >29min dep time) Wet cleaning: Start cleaning by using a cleanroom wipe sprayed with DI. Wipe upper chamber sidewalls with it. Finish cleaning by using the cleanroom wipe sprayed with IPA & wiping again.
- Load the recipe for cleaning "STD CF4/O2 Clean" (edit the recipe and change ONLY time of cleaning). Follow instructions regarding required time for cleaning.
Standard Clean Recipe (PECVD#2): "STD CF4/O2 Clean"
Click the above link for a screenshot of the standard cleaning recipe, for which you will enter a custom time. The recipe is set up so that it will pop up a window for the cleaning time upon running the recipe - you do not need to edit the recipe before running it.
Clean Times (PECVD#2)
| Film Deposited | Cleaning Time (Dry) |
|---|---|
| SiO2 | 1 min. clean for every 1 min. deposition |
| Si3N4 | 1 min. clean for every 7 min of deposition |
| If > 29min total dep time
(Season + Dep) |
Wet Clean the Upper Lid/Chamber
DI water then Isopropyl Alcohol on chamber wall & portholes |
ICP-PECVD (Unaxis VLR)
2020-02: New recipes have been characterized for low particulate count and repeatability. Only staff-supplied recipes are allowed in the tool. Please follow the new procedures to ensure low particle counts in the chamber.
The system currently has Deuterated Silane (SiD4) installed - identical to the regular Silicon precursor SiH4, except that it significantly lowers optical absorption in the near-infrared due to shifted molecular vibrations/molecular weights. This gas is more expensive and thus more applicable to optical application than to general-purpose SiN films.
Process Control Data (Unaxis ICP-PECVD)
- ICP-PECVD Process Control Plots - Plots of all Process Control data
- Low Deposition Rate SiO2
- High Deposition Rate SiO2
- Si3N4
- Low Stress Si3N4
Low Deposition Rate SiO2 [ICP-PECVD]
- Low Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 LDR250C"
- Low Deposition Rate SiO2 [ICP-PECVD] - Process Control Data
- Low Deposition Rate SiO2 [ICP-PECVD] - Historical Data - before Oct. 2021
High Deposition Rate SiO2 [ICP-PECVD]
- High Deposition Rate SiO2 [ICP-PECVD] - Standard Recipe - "SiO2 HDR250C"
- High Deposition Rate SiO2 [ICP-PECVD] - Current Process Control Data
- High Deposition Rate SiO2 [ICP-PECVD] - Historical Data
Si3N4 [ICP-PECVD]
- Si3N4 [ICP-PECVD] - Standard Recipe - "SiN 250C"
- Si3N4 [ICP-PECVD] - Current Process Control Data
- Si3N4 [ICP-PECVD] - Historical Data - before Oct. 2021
Low Stress Si3N4 [ICP-PECVD]
- Low Stress Si3N4 [ICP-PECVD] - Standard Recipe - "SiN Low Stress 250C"
Standard Cleaning Procedure [ICP-PECVD]
You must edit the Post-Dep Clean recipe to correspond to your deposited thickness and material. See the Operating Procedure on the Unaxis Tool Page for details.
- SiNx etches at 20nm/min
- SiO2 etches at 40nm/min
Standard Clean Recipe
To Be Added
General Recipe Notes (Unaxis VLR ICP-PECVD)
- RF1 = Bias
- RF2 = ICP Power
- All recipes start with an Argon pre-clean with 0W bias (gentle), to improve adhesion/nucleation.
- Maximum SiO2 Dep. thickness allowed: 800nm
- Above this thickness, you must run a chamber clean/season before depositing more onto your product wafer.