Difference between revisions of "PECVD Recipes"
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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− | *Deposition Rate: ≈ 9.0 nm/min |
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− | *Refractive Index: ≈ 1.952 |
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− | *Stress ≈ 484MPa |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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*[[media:Advanced PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]] |
*[[media:Advanced PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDRjSHEtYUZRUTg4azE2U0JGUTg2M1E#gid=sharing Oxide Thickness uniformity 2014] |
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− | *Deposition Rate: ≈ 28.0 nm/min |
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− | *Refractive Index: ≈ 1.472 |
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− | *Stress ≈ -270MPa |
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==LS SiN deposition (PECVD #2) == |
==LS SiN deposition (PECVD #2) == |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dENSak1ZNnVaVTFEQTBzdDJMSDlDTFE&usp=drive_web#gid=1=sharing LS Nitride2 Thickness uniformity 2014] |
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− | *Deposition Rate: ≈ 8.34 nm/min |
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− | *Refractive Index: ≈ 1.932 |
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− | *Stress ≈ -45MPa |
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== Amorphous-Si deposition (PECVD #2) == |
== Amorphous-Si deposition (PECVD #2) == |
Revision as of 11:47, 9 January 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- Oxide Data 2014
- Oxide Thickness uniformity 2014
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)
- Nitride2 Data 2014
- Nitride2 Thickness uniformity 2014
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data 2014
- LS Nitride2 Thickness uniformity 2014
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4 )
50° | 100° | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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