Difference between revisions of "PECVD Recipes"
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== SiN deposition (PECVD #2) == |
== SiN deposition (PECVD #2) == |
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*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
*[[media:New Advanced PECVD-Nitride2 300C standard recipe.pdf|Nitride2 Standard Recipe]] |
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− | *[[media:ADV PECVD NITRIDE2-Data April 2014.pdf|Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate)]] |
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*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dDE0R3FlenNPa2txNmRldTczMXZNNnc#gid=sharing Nitride2 Data 2014] |
||
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
*[https://docs.google.com/spreadsheet/ccc?key=0AnwBU1s4JQo2dERkYm85bGtYQVpjVk5GTGJuMkg2anc&usp=drive_web#gid=sharing Nitride2 Thickness uniformity 2014] |
Revision as of 11:48, 9 January 2015
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
SiN deposition (PECVD #1)
SiO2 deposition (PECVD #1)
SiOxNy deposition (PECVD #1)
PECVD 2 (Advanced Vacuum)
SiO2 deposition (PECVD #2)
SiN deposition (PECVD #2)
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data (Deposition Rate, Refractive Index, Stress, HF etch rate )
- LS Nitride2 Data 2014
- LS Nitride2 Thickness uniformity 2014
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
50° | 100° | 250° |
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SiN (2% SiH4 - No-Ar - Extra N2)
50° | 100° | 250° |
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SiN (100% SiH4 )
50° | 100° | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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