Difference between revisions of "PECVD Recipes"
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=[[PECVD 2 (Advanced Vacuum)]]= |
=[[PECVD 2 (Advanced Vacuum)]]= |
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− | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015 |
+ | *[https://docs.google.com/spreadsheets/d/1kj0SWxRpnPRoGld8k3sW-3yK1iPm3buTkvlJSN5YPV4/edit#gid=sharing Particulates (Gain4) in PECVD#2 2015] |
*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
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− | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017 |
+ | *[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017] |
*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates (Gain4 and Gain2) in PECVD#2 films 2017] |
*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates (Gain4 and Gain2) in PECVD#2 films 2017] |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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==SiN deposition (Unaxis VLR) == |
==SiN deposition (Unaxis VLR) == |
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=== SiN (2% SiH<sub>4</sub>) === |
=== SiN (2% SiH<sub>4</sub>) === |
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− | !width=350 align=center|50° (pinholes) |
+ | ! width="350" align="center" |50° (pinholes) |
− | !width=350 align=center|100° (pinholes) |
+ | ! width="350" align="center" |100° (pinholes) |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-5W-50C-High-Stress.pdf|SiN Deposition Recipe (5W 50° High Stress)]] |
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=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
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− | !width=350 align=center|50° (pinholes) |
+ | ! width="350" align="center" |50° (pinholes) |
− | !width=350 align=center|100° (pinholes) |
+ | ! width="350" align="center" |100° (pinholes) |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]] |
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=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
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− | !width=350 align=center|50° (pinholes) |
+ | ! width="350" align="center" |50° (pinholes) |
− | !width=350 align=center|100° (pinholes) |
+ | ! width="350" align="center" |100° (pinholes) |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 50° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-ExtraN2-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar Extra N<sub>2</sub> (120W 50° Low Stress)]] |
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=== SiN (100% SiH<sub>4</sub> ) === |
=== SiN (100% SiH<sub>4</sub> ) === |
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− | !width=350 align=center|50° (pinholes) |
+ | ! width="350" align="center" |50° (pinholes) |
− | !width=350 align=center|100° (pinholes) |
+ | ! width="350" align="center" |100° (pinholes) |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (120W 50° Low Stress)]] |
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*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-Low stress SiNx-100% SiH4-120W-250C.pdf|SiN Deposition Recipe (120W 250° Low Stress)]] |
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− | *[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C |
+ | *[[Media:PECVD2-SiN-Table-Low stres SiNx-100% SiH4-120W-100C.pdf|SiN Comparison Table 120W, 100(250)C]] |
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*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-Medium stress SiNx-100%SiH4-120W-50C.pdf|SiN Deposition Recipe (50W 50° Medium Stress)]] |
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==SiO<sub>2</sub> deposition (Unaxis VLR) == |
==SiO<sub>2</sub> deposition (Unaxis VLR) == |
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=== SiO<sub>2</sub> (2% SiH<sub>4</sub>) === |
=== SiO<sub>2</sub> (2% SiH<sub>4</sub>) === |
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− | !width=350 align=center|50° |
+ | ! width="350" align="center" |50° |
− | !width=350 align=center|100° |
+ | ! width="350" align="center" |100° |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiO2Recipe-5W-50C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 50°)]] |
*[[Media:PECVD2-SiO2Recipe-5W-50C.pdf|SiO<sub>2</sub> Deposition Recipe (5W 50°)]] |
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=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar) === |
=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar) === |
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− | !width=350 align=center|50° |
+ | ! width="350" align="center" |50° |
− | !width=350 align=center|100° |
+ | ! width="350" align="center" |100° |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiO2-Recipe-NoAr-50C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (50°)]] |
*[[Media:PECVD2-SiO2-Recipe-NoAr-50C.pdf|SiO<sub>2</sub> Deposition Recipe - No Ar (50°)]] |
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR) === |
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR) === |
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− | !width=350 align=center|50° |
+ | ! width="350" align="center" |50° |
− | !width=350 align=center|100° |
+ | ! width="350" align="center" |100° |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:SiO2 100% SiH4 HDR 50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]] |
*[[Media:SiO2 100% SiH4 HDR 50C.pdf|SiO<sub>2</sub> Deposition Recipe - HDR (50°)]] |
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
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− | !width=350 align=center|50° |
+ | ! width="350" align="center" |50° |
− | !width=350 align=center|100° |
+ | ! width="350" align="center" |100° |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]] |
*[[Media:PECVD2-SiO2-Recipe-100%SiH4-LDR-50C.pdf|SiO<sub>2</sub> Deposition Recipe - LDR (50°)]] |
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=== Amorphous Si (100%SiH<sub>4</sub> Ar He) === |
=== Amorphous Si (100%SiH<sub>4</sub> Ar He) === |
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− | !width=350 align=center|90° |
+ | ! width="350" align="center" |90° |
− | !width=350 align=center|250° |
+ | ! width="350" align="center" |250° |
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*[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]] |
*[[Media:02-ICP-PECVD-a-Si_Film-90C.pdf|a-Si Deposition Recipe - 90°]] |
Revision as of 14:00, 26 September 2017
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
- Particulates (Gain4) in PECVD#1 2015
- Particulates (Gain4) in PECVD#1 2016
- Particulates (Gain4) in PECVD#1 2017
- Particulates (Gain4 and Gain2) in PECVD#1 films 2017
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)
- LS SiN Standard Recipe
- LS SiN Data 2014
- LS SiN 1000A Thickness uniformity 2014
- SiOxNy Standard Recipe
- SiOxNy Data 2014
- SiOxNy1000A Thickness uniformity 2014
PECVD 2 (Advanced Vacuum)
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
- Particulates (Gain4 and Gain2) in PECVD#2 films 2017
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° (pinholes) | 100° (pinholes) | 250° |
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SiN (100% SiH4 )
50° (pinholes) | 100° (pinholes) | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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