PECVD Recipes: Difference between revisions
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(SiO2 dat for 300nm film 2017) |
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*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
*[https://docs.google.com/spreadsheets/d/1F2pfsVnbUgaE9tsm8HZMlY6cyt-nhui0IpvGc6udhDU/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2016] |
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*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
*[https://docs.google.com/spreadsheets/d/1MblK5Zr5Skfw0s9Hdhqr_cCwN-nCgM-ofZnsAyvVRq8/edit#gid=sharing SiO<sub>2</sub> 100nm Data 2017] |
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*[https://docs.google.com/spreadsheets/d/ |
*[https://docs.google.com/spreadsheets/d/15SocIqWQvBKSvT5oCWoZAURLaaqb9KosxCN2rueZQN8/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2017] |
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*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
*[https://docs.google.com/spreadsheets/d/1DdjIRGsfJ7WCrxQoGpmzkjLGJhpBTFNYLFmmHcNjAjk/edit#gid=sharing SiO<sub>2</sub> 300nm Data 2018] |
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*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
*[https://docs.google.com/spreadsheets/d/1WJcYzHUjLrWpys_i-Q96FN_lBDBufpXZKZVEX_gri_Q/edit#gid=sharing Nitride2 Thickness Uniformity 2017] |
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*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
*[https://docs.google.com/spreadsheets/d/1hzj4Fb5fN8lS0m9-rm9AgEn0Zunif5grI4X7YkAMEFU/edit#gid=sharing Nitride2 Thickness Uniformity 2018] |
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*[[media: |
*[[media:SiNx Films by PECVD2.pdf|SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate]] |
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==Low-Stress SiN deposition (PECVD #2) == |
==Low-Stress SiN deposition (PECVD #2) == |
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== Amorphous-Si deposition (PECVD #2) == |
== Amorphous-Si deposition (PECVD #2) == |
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*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]] |
*[[media:03-Amorphous-Si-PECVD-2.pdf|Amorphous Si Deposition Recipe]] |
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*[[media: |
*[[media:ASi deposition and film stress using AV dep tool.pdf|Amorphous Si Films and Their Stress]] |
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= [[ICP-PECVD (Unaxis VLR)]] = |
= [[ICP-PECVD (Unaxis VLR)]] = |
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*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]] |
*[[Media:PECVD2-SiNx-medium-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (50W 250° Medium Stress)]] |
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*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]] |
*[[Media:PECVD2-SiNx -h.s.-Comparison table-2% SiH4-100C-120W.pdf|Comparison Table SiNx (5W 250° High Stress)]] |
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*[[Media:28-Very-low-pin-hole- |
*[[Media:28-Very-low-pin-hole-density SiNx film at 300 C.pdf|Very-Low-Pin-Hole-Density SiNx Recipe(25W 300°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-50C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 50° High Stress)]] |
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*[[Media:41-High- |
*[[Media:41-High-stress SiNx at 50 C using Unaxis ICP deposition tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 50°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-50C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 50° Medium Stress)]] |
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*[[Media:36-Medium- |
*[[Media:36-Medium-stress SiNx using Unaxis ICP deposition tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 50°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-50C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 50° Low Stress)]] |
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*[[Media:40-Low- |
*[[Media:40-Low-stress SiNx at 50 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 50°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-100C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 100° High Stress)]] |
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*[[Media:38-High- |
*[[Media:38-High-stress SiNx at 100 C using Unaxis ICP deposition tool.pdf|Film Properties of high-stress SiN<sub>x</sub> (No Ar, 5W, 100°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-100C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 100° Medium Stress)]] |
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*[[Media:39-Medium- |
*[[Media:39-Medium-stress SiNx at 100C using Unaxis ICP deposition tool.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 100°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-100C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 100° Low Stress)]] |
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*[[Media:37-Low- |
*[[Media:37-Low-stress SiNx at 100 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 100°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-5W-250C-High-Stress.pdf|SiN Deposition Recipe - No Ar (5W 250° High Stress)]] |
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*[[Media:34-High- |
*[[Media:34-High-stress SiNx at 250 C using Unaxis ICP deposition tool.pdf|Film Properties of High-stress SiN<sub>x</sub> (No Ar, 5W, 250°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-50W-250C-Medium-Stress.pdf|SiN Deposition Recipe - No Ar (50W 250° Medium Stress)]] |
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*[[Media:36-Medium- |
*[[Media:36-Medium-stress SiNx using Unaxis ICP deposition tool-a.pdf|Film Properties of Medium-stress SiN<sub>x</sub> (No Ar, 50W, 250°)]] |
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*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]] |
*[[Media:PECVD2-SiN-Recipe-NoAr-120W-250C-Low-Stress.pdf|SiN Deposition Recipe - No Ar (120W 250° Low Stress)]] |
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*[[Media:35-Low- |
*[[Media:35-Low-stress SiNx at 250 C using Unaxis ICP deposition tool.pdf|Film Properties of Low-stress SiN<sub>x</sub> (No Ar, 120W, 250°)]] |
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*[[Media:02-ICP-PECVD-a- |
*[[Media:02-ICP-PECVD-a-Si Film-90C.pdf|a-Si Deposition Recipe - 90°]] |
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*[[Media:01-ICP-PECVD-a-Si- |
*[[Media:01-ICP-PECVD-a-Si-Deposition Recipe-250C.pdf|a-Si Deposition Recipe - 250°]] |
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*[[Media: |
*[[Media:Amorphous Silicon Film Deposition using 12.5W bias on SiO2-Si.pdf|Thick, Defects-free a-Si Film on SiO<sub>2</sub>/Si with a Lower Bias Power]] |
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Revision as of 14:34, 27 April 2018
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
- Particulates (Gain4) in PECVD#1 2015
- Particulates (Gain4) in PECVD#1 2016
- Particulates (Gain4) in PECVD#1 2017
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 300nm Data 2018
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2018
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 300nm Data 2018
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2018
OTHER recipes: Low-Stress (LS) SiN and SiOxNy deposition (PECVD #1)
- LS SiN Standard Recipe
- LS SiN Data 2014
- LS SiN 1000A Thickness uniformity 2014
- SiOxNy Standard Recipe
- SiOxNy Data 2014
- SiOxNy1000A Thickness uniformity 2014
PECVD 2 (Advanced Vacuum)
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Data 2018
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
- Oxide Thickness Uniformity 2018
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Data 2018
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- Nitride2 Thickness Uniformity 2018
- SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride (< 100 MPa)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride Data 2018
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
- LS Nitride2 Thickness Uniformity 2018
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° (pinholes) | 100° (pinholes) | 250° |
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SiN (100% SiH4 )
50° (pinholes) | 100° (pinholes) | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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