RIE Etching Recipes: Difference between revisions
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(→RIE 5 (PlasmaTherm): added Photoressit & ARC etching, copied from DUV Litho recipes page) |
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{{recipes|Dry Etching}} |
{{recipes|Dry Etching}} |
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=[[RIE 2 (MRC)]] = |
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==CdZnTe Etching (RIE 2)== |
==CdZnTe Etching (RIE 2)== |
Revision as of 04:26, 17 September 2019
Back to Dry Etching Recipes.
RIE 2 (MRC)
CdZnTe Etching (RIE 2)
ZnS Etching (RIE 2)
ITO Etching (RIE 2)
InP-InGaAsP-InGaAlAs Etching (RIE 2)
RIE 3 (MRC)
SiO2 Etching (RIE 3)
SiNx Etching (RIE 3)
RIE 5 (PlasmaTherm)
AlGaAs\GaAs Etching (RIE 5)
GaN Etching (RIE 5)
Photoresist and ARC
DUV42P (AR2) etching:
- O2 = 20sccm // Pressure = 10mT // RF = 100W // Time = 40 sec
- No need to pump/purge, can etch right away.
- No helium cooling, Run in manual mode.