SEM 1 (JEOL IT800SHL): Difference between revisions
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===Capabilities=== |
===Capabilities=== |
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The system has multiple detectors, detailed below. |
The system has multiple detectors, detailed below. |
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Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column) |
Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. |
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The system can accept a 6” wafer, but only |
The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement. |
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The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR). |
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR). |
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This SEM also has an Electron-Beam Lithography Nabity system. Contact |
This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info. |
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==Detailed Specifications== |
==Detailed Specifications== |
Revision as of 20:01, 16 May 2024
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About
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.
Capabilities
The system has multiple detectors, detailed below. Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.
The Hummer coater is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).
This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.
Detailed Specifications
Imaging
- Resolution:
- 0.5nm at 15kV SHL mode
- 0.7nm at 1kV
- 0.9nm at 500V
- Magnification:
- Photo magnification: x10 to x2,000,000 (128mm x 96mm)
- Display magnification: x27 to x5,480,000 (1280pix x 960pix)
- Imaging Modes:
- STD: Standard
- LDF: Large depth of focus
- BD: Beam deceleration
- Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
- SHL: Super hybrid lens
- Detectors
- SED: Secondary electron detector (low angle)
- UHD: Ultra high resolution detector
- SBED: Scintillated back scatter electron detector
- Inserts between the objective lens and the sample
- LVBED: Low vacuum back scatter electron detector
- LVSED: Low vacuum secondary electron detector
- Accelerating Voltages:
- SEM: 0.01 to 30kV
- Probe currents
- A few pA to 500nA (30kV) 100nA (5kV)
- Specimen stage
- X: 140mm Y: 80mm
- Z: 6mm to 41mm
- Tilt: -5 to 70 degrees (depending on sample holder and offset)
- Rotation: 360 degrees
Mechanical
- Max Sample Size: 6-inch wafer
- Stage movement:
- max: 70 x 50mm
- 4-inch wafer: limited to ~25x25mm movement area from wafer center.
- Tilt: -5° to varies. Tilt is dependent on sample holder, stage height, and offset value.
- Rotation: 360°
- Specimen holders :
- Copper and XYZ Carbon tape available
- 4-inch wafer with topside clips
- 1-inch holder for 30°/90°, 45°/90° mounting with tape or clips.
Operating Procedures
- JEOL IT800SHL Operating Procedure.
- Optimizing Astigmatism (CalTech Nanoscience Institute)
- Stig is the most common cause of blurry images.
- A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.