E-Beam 2 (Custom): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=e-beam2.jpg
|picture=IMG 5388.jpg
|type = Vacuum Deposition
|type = Vacuum Deposition
|super= Tony Bosch
|super= Lee Sawyer
|super2= Mike Barreraz
|phone=(805)839-3918x217
|phone=(805)839-2123
|location=Bay 3
|location=Bay 3
|email=bosch@ece.ucsb.edu
|email=lee_sawyer@ucsb.edu
|description = Electron-Beam Evaporation System
|description = Electron-Beam Evaporation System
|manufacturer = Temescal
|manufacturer = Temescal
Line 11: Line 12:
|toolid=8
|toolid=8
}}
}}
= About =
==About==
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, SiO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective and highly reflective multiple layer stacks), electrical insulators, and reactive ion etching masks. Samples up to ~ 3” x 3” can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.
This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO<sub>2</sub>, ITO, TiO<sub>2</sub>, Ta<sub>2</sub>O<sub>5</sub>, and SrF<sub>2</sub>. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.


= Detailed Specifications =
==Detailed Specifications==


*Temescal 10kV power supply
*Temescal CV-6SXL 10 kV power supply
*Temescal 4-pocket series 260 e-beam source
*Temescal 4-pocket Series 260 E-Beam turret source
*Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
*Electron beam controller with sweep rate and amplitude control
*Inficon IC/5 Thin Film Deposition Controller
*Cryo-pumped system with ~ 1e-7 ultimate base pressure
*Cryo-pumped system with low E-7 ultimate base pressure
*Automatic vacuum sequencing
*Automatic vacuum sequencing via CHA Auto-Tech II
*Crystal thickness monitoring
*Crystal thickness monitoring
*Sample size: up to 3” x 3” pieces
*Sample size: up to 5” diameter non-heated, 4" diameter heated
⚫
*Oxygen bleed for maintaining oxide stoichiometry
*'''Heated''' sample holder (programmable), sample temps up to 370°C
⚫
*'''Oxygen''' gas MFC for maintaining oxide stoichiometry


==Documentation==
<br>
= Materials Table =


*[https://wiki.nanofab.ucsb.edu/w/images/d/d5/EB2_SOP_Rev_H.pdf E-Beam #2 Standard Operating Procedure]
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center; font-size: 95%" class="collapsible collapsed wikitable"

|-
==Recipes==
! colspan=5 width=1300 height=35 bgcolor="#D0E7FF" align="center"|<div style="font-size: 150%;">Materials Table</div>

|- bgcolor="#D0E7FF"
*[[E-Beam Evaporation Recipes#E-Beam%202%20.28Custom.29|Recipes > Vac. Deposition > '''E-Beam 2 (Custom)''']]
! width="45" bgcolor="#D0E7FF" align="center" | '''Material'''
**Lists the characterized recipes for this machine - other materials may also be used with staff permission.
! width="45" bgcolor="#D0E7FF" align="center" | '''Density, g/cm3'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Z Ratio'''
! width="45" bgcolor="#D0E7FF" align="center" | '''Tooling factor, %'''
! width="100" bgcolor="#D0E7FF" align="center" | '''Comments'''
|-
|Al2O3
|3.97
|0.336
|140
|Check this
|-
|GeO2
|5.35
|0.516
|
|Check this
|-
|ITO
|6.43-7.16
|0.841
|
|Check this
|-
|MgO2
|3.58
|0.411
|157.6
|Check this
|-
|Si
|2.32
|0.712
|150.0
|Check this
|-
|SiO2
|2.70
|1.070
|157.6
|Check this
|-
|SiOx
|2.13
|0.87
|130.0
|Check this
|-
|SrF2
|4.28
|0.727
|140.0
|Check this
|-
|Ta2O5
|8.2
|0.30
|157.6
|Check this
|-
|TiO2
|4.26
|0.400
|139.0
|Check this
|-

Revision as of 15:09, 30 July 2024

E-Beam 2 (Custom)
IMG 5388.jpg
Location Bay 3
Tool Type Vacuum Deposition
Manufacturer Temescal
Description Electron-Beam Evaporation System
Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Mike Barreraz

Recipes Vacuum Deposition Recipes
SignupMonkey: Sign up for this tool


About

This electron-beam evaporation system is used for the controlled deposition of thin dielectric films. The films are evaporated from a wide variety of solid sources. The most common dielectrics deposited are: SiO2, ITO, TiO2, Ta2O5, and SrF2. Other materials may be evaporated upon request. Oxygen gas can be bled into the system during deposition to try to maintain the stoichiometry during deposition. Fixturing for heating the substrate can also be used. A crystal thickness monitor is used to control the deposition thickness. The dielectrics deposited by this system are typically used for optical coatings (anti-reflective), electrical insulators, and reactive ion etching masks. Samples up to ~ 5" diameter can be placed into this system for evaporation. Typical deposition rates are several Angstroms/second.

Detailed Specifications

  • Temescal CV-6SXL 10 kV power supply
  • Temescal 4-pocket Series 260 E-Beam turret source
  • Temescal TemEbeam Controller (EBC); controls the high voltage power supply, electron beam position (up to 8 sweep patterns per pocket), and source pocket position
  • Inficon IC/5 Thin Film Deposition Controller
  • Cryo-pumped system with low E-7 ultimate base pressure
  • Automatic vacuum sequencing via CHA Auto-Tech II
  • Crystal thickness monitoring
  • Sample size: up to 5” diameter non-heated, 4" diameter heated
  • Heated sample holder (programmable), sample temps up to 370°C
  • Oxygen gas MFC for maintaining oxide stoichiometry

Documentation

Recipes

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