Suss Aligners (SUSS MJB-3): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=SussAligner.jpg
|picture=SussAligner.jpg
|type = Lithography
|type = Lithography
|super= Lee Sawyer
|super= Lee Sawyer
|super2= Bill Millerski
|phone=(805) 893-2123
|phone=(805) 893-2123
|location=Bay 6
|location=Bay 6
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}}
}}
==About==
==About==
We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units).
We have three high-performance mask aligners for contact exposure processes. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "L", "R" and "IR" units). Our left and IR units are configured for the near-UV window (365 and 405 nm). Using a filter, these two systems can be configured for I-line (350 nm) only, assisting in resolution. All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron. Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Special black chucks may be used for transparent materials. For backside alignment through opaque materials such as Si or GaAs, our IR aligner can be used and is described below. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron.

Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

====Backside Alignment====
On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.

For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.

Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution.


==Detailed Specifications==
==Detailed Specifications==
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*Substrate size: 3" x 3" max.
*Substrate size: 3" x 3" max.
*Wafer / substrate thickness: 0-4.5 mm
*Wafer / substrate thickness: 0-4.5 mm
*Mask plate size: 4" x 4" x 0.090", typically soda-lime glass. Smaller (eg. 3") is also acceptable.
*Exposure optics:
*Exposure optics:
**Left unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
**Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp
**Right unit: 350-450 nm/200 W mercury lamp
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
**IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
*Additional manufacturer options (none installed on our systems):
*Additional manufacturer options (none installed on our systems):
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**±5% over 3" diameter
**±5% over 3" diameter


==Aligner with No Filter==
===IR Aligner===

[[image:DUV-Spectra-No-Filter.png|thumb|none|600px|Aligner with No Filter]]
*Backside illumination with halogen bulb & transparent chuck
==Aligner with Filter for i-line Exposure==
*Infrared camera and computer for imaging.
[[image:DUV-Spectra-With-Filter.png|thumb|none|600px|Aligner with Filter for i-line Exposure]]
*Through-wafer alignment and/or inspection.

[[File:IR Alignment check 01 - crop.png|alt=Screenshto of IR camera showing front-to-back alignment|none|thumb|MJB-IR front-to-back alignment check through Silicon substrate, with few-micron etched features on the front, aligned to few-mm photoresist pattern on the backside.]]
<br />
===Exposure Optical Spectrum with No Filter===
[[image:DUV-Spectra-No-Filter.png|thumb|none|Aligner with No Filter]]
===Exposure Optical Spectrum with Filter for i-line Exposure===
[[image:DUV-Spectra-With-Filter.png|thumb|none|302x302px|Aligner with Filter for i-line Exposure]]
==Documentation==
==Documentation==


*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB 3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/wiki/images/d/de/MJB_3_SOP.pdf MJB-3 Standard Operating Procedure]
*[https://wiki.nanotech.ucsb.edu/w/images/7/70/MJB_3_IR_Camera_SOP_Rev_B.pdf MJB-3 IR Camera Operation]
*[https://wiki.nanotech.ucsb.edu/w/images/1/11/MJB_3_IR_Alignment_Mode_Conversion.pdf MJB-3 IR Alignment Mode Conversion]

===Mask Plate Info===

*[[Mask Making Guidelines for Contact Aligners|Mask Making Guidelines - Contact Masks]] - ''in progress''
*[[Photomask Ordering Procedure for UCSB Users]] - see this page for how to submit your order into the purchasing system.

===CAD Files===
''For designing your mask plates.''

*Male/female alignment marks (GDS): [[Media:MA6-FrontBack AlignMarks only.gds|MA6-FrontBack_AlignMarks_only.gds]]
*[[Calculators + Utilities#CAD%20Layout%20Programs|CAD Layout Programs]]
*[[Calculators + Utilities#CAD%20Design%20Tips|CAD Design Tips]]
*[[Calculators + Utilities#CAD%20Files%20.26%20Templates|CAD Files & Templates]] - alignment markers, verniers and other useful CAD objects

==Recipes==


*Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''<u>SUSS MJB-3</u>''']]
== Recipes ==
**''Starting recipes for various I-Line photoresists, positive and negative.''
* Recipes > Lithography > Photolithography Recipes > [[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|'''<u>SUSS MJB-3</u>''']]
** Starting recipes for various I-Line photoresists, positive and negative.

Latest revision as of 21:48, 5 September 2024

Suss Aligners (SUSS MJB-3)
SussAligner.jpg
Location Bay 6
Tool Type Lithography
Manufacturer Karl Suss America
Description Mask Aligner - MJB 3 UV400

Primary Supervisor Lee Sawyer
(805) 893-2123
lee_sawyer@ucsb.edu

Secondary Supervisor

Bill Millerski


Recipes


About

We have two high-performance mask aligners for contact exposure processes. They are manual mechanical systems alignment, contact/proximity, with exposure shuttered by a timer. The resolution (depending on contact mode, optics and exposure wavelength and "operator technique") is into the submicron region. (See descriptions for our "Std." and "IR" units).

Our units are configured for the near-UV window (365 and 405 nm). All units have the "vacuum contact" option extending resolution to ~0.7 microns. Higher resolution optic systems that can be supplied by Suss are given below. The standard soft and hard contact modes of mechanical and pneumatic pressure respectively, give resolution to ~1 micron.

Exposures can be done on substrates from small "piece parts" of less than 1 cm square to substrates of 3 inch diameter or square. Masks up to 4 inches in size can be used although only 3” x 3” of this area is usable. A 4” wafer can be exposed with the system. However, only 3” x 3” will be exposed on the wafer and vacuum mode is unavailable.

Backside Alignment

On the Standard MJB-3, special black chucks may be used for optically transparent materials, allowing you to view through the wafer.

For backside alignment through opaque materials such as Si or GaAs, our IR aligner has backside infrared illumination (halogen bulb) through these black chucks. A Hammamatsu IR camera is installed to view the infrared image.

Using a filter, the IR system can be configured for I-line (350 nm) only, assisting in resolution.

Detailed Specifications

  • Wafer size: 3" max. for vacuum mode; 4” for soft contact (3” x 3” exposure area)
  • Substrate size: 3" x 3" max.
  • Wafer / substrate thickness: 0-4.5 mm
  • Mask plate size: 4" x 4" x 0.090", typically soda-lime glass. Smaller (eg. 3") is also acceptable.
  • Exposure optics:
    • Standard unit (Aligner #1): 350-450 nm/200 W mercury lamp
    • IR unit: 280-450 nm/200 W mercury lamp (can filter to 350 nm)
  • Additional manufacturer options (none installed on our systems):
    • DUV (polychromatic): 240-260 nm/350 W Cd-Xe lamp; 0.2 micron resolution (PMMA)
    • DUV (monochromatic): 248 nm/KrF excimer laser; 0.3 micron resolution (PMMA)
    • 193 nm/ArF excimer laser; 0.2 micron resolution (PMMA)
  • Uniformity:
    • ±3% over 2" diameter
    • ±5% over 3" diameter

IR Aligner

  • Backside illumination with halogen bulb & transparent chuck
  • Infrared camera and computer for imaging.
  • Through-wafer alignment and/or inspection.
Screenshto of IR camera showing front-to-back alignment
MJB-IR front-to-back alignment check through Silicon substrate, with few-micron etched features on the front, aligned to few-mm photoresist pattern on the backside.


Exposure Optical Spectrum with No Filter

Aligner with No Filter

Exposure Optical Spectrum with Filter for i-line Exposure

Aligner with Filter for i-line Exposure

Documentation

Mask Plate Info

CAD Files

For designing your mask plates.

Recipes

  • Recipes > Lithography > Photolithography Recipes > SUSS MJB-3
    • Starting recipes for various I-Line photoresists, positive and negative.