Stepper 1 (GCA 6300): Difference between revisions

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{{tool|{{PAGENAME}}
{{tool2|{{PAGENAME}}
|picture=Stepper1.jpg
|picture=Stepper1.jpg
|type = Lithography
|type = Lithography
|super= Adam Abrahamsen
|super= Biljana Stamenic
|super2= Bill Millerski
|phone=(805)839-3918x213
|location=Bay 7
|location=Bay 7
|email=abrahamsen@ece.ucsb.edu
|description = GCA 6300 I-Line Wafer Stepper
|description = GCA 6300 I-Line Wafer Stepper
|manufacturer = GCA
|manufacturer = GCA
|materials =
|materials =
|toolid=37
|toolid=37
}}
}}
= About =


== About ==
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum die size is ~ 15 mm x 15 mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get about 180 W/cm² of i-line intensity at the wafer.
Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.


The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR510A, 955CM, 950-0.8 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 and AZ9260 for >5 um thick positive processes. AZnLOF5510 for <1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.
The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.


'''Tutorial:''' If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: [https://wiki.nanofab.ucsb.edu/w/images/c/cb/Demis_D_John_-_Stepper_Reticle_Layout_vs_Wafer_Layout.pdf Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf]
= Detailed Specifications =


== Detailed Specifications ==
*Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 mm for 0.7 um process
*Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process
*Maximum die size: ~15 mm x 15 mm
*Maximum die size: ~15 mm x 15 mm
*Resolution: 500 nm over portion of field; 700 nm over entire field
*Resolution: 500 nm over portion of field; 700 nm over entire field
*Registration tolerance: Max 0.30 um global alignment; Max 0.15 um local alignment (with care, you can achieve < 0.10 um registration)
*Registration tolerance: Max 0.30 um global alignment; Max 0.15 um local alignment (with care, you can achieve < 0.10 um registration)
*Minimum substrate size: ~ 10 x 10 mm
*Minimum substrate size: ~ 10 x 10 mm
*Computer programmable recipes saved on hard disk
*Computer programmable recipes saved on hard disk
*Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.


== Process Information ==
= See Also =
*[https://signupmonkey.ece.ucsb.edu/w/index.php?title=Lithography_Recipes#Photolithography_Recipes Process Page: Photolithography Recipes]
*[[GCA 6300 Mask Making Guidance]] ('''''Work in progress- not ready yet''''')


===CAD Files===

*[https://wiki.nanotech.ucsb.edu/w/images/c/c4/GCA_Stepper_MaskPlate_Master-DarkField_5x.gds Photomask Template: Dark-field (polygons/objects are clear) at 5x Magnification (GDS)]
**''This template is designed to be submitted to the photomask vendor to print as-is, no scaling applied.''
**''Insert your designs into the template as Instances scaled UP by 5x.''
**''During exposure, set the blades to 90/90 to block out AutoStep200 DFAS openings''
*[[Media:GCA Global Mark.gds|Global Alignment Mark CAD File (GDS)]]
*See the [[Calculators + Utilities#CAD%20Files%20.26%20Templates|Calculators + Utilities > CAD Files & Templates]] page for other useful CAD files, such as overlay verniers, vented fonts etc.

== Service Provider ==
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.
*[http://3ctechnical.com/index.html 3C Technical] - The company that services the stepper.


== Operating Procedures ==
= Documentation =
*[https://wiki.nanofab.ucsb.edu/w/images/a/a0/GCA_6300_Running_a_JOB_3.pdf Running the JOB - One Page Instructions] *
*[https://wiki.nanofab.ucsb.edu/w/images/d/d2/GCA_6300_Standard_Operating_Procedure_010524.pdf Standard Operating Procedures] *
*[https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Optimizing the Process (FEM)] - Focus Exposure Matrix (FEM) instructions
*[https://wiki.nanofab.ucsb.edu/w/images/3/32/GCA_6300_Programming_a_Job_7.pdf Programming a Job] *
*[https://wiki.nanofab.ucsb.edu/w/images/3/3d/GCA_6300_-_Commands.pdf GCA 6300 User Accessible Commands] *
*[[Troubleshooting and Recovery]]
*[https://wiki.nanofab.ucsb.edu/w/images/5/5a/GCA_6300_Training_Manual-_3-23-2020.pdf Old Training Manual] *

== Recipes ==

* '''[[Stepper Recipes#Stepper 1 (GCA 6300)|Recipes > Lithography > Stepper Recipes > Stepper #1]]''' - starting processes for various I-Line photoresists, including Dose/Focus values.

To calibrate your own Litho processes, you will need to:

* Run your own [https://wiki.nanofab.ucsb.edu/w/images/9/93/GCA6300_Optimizing_the_process_6.pdf Focus Exposure Matrix] - instructions for doing this on the GCA 6300.
* [[Lithography Calibration - Analyzing a Focus-Exposure Matrix]] - how to analyze an FEM

Litho. recipes for all our photolith. tools can be found on the [[Lithography Recipes#Photolithography%20Recipes|Photolithography Recipes]] page.

== Staff Procedures ==
''These procedures are for Staff use - contact staff if you think you need to run these!''

*[[GCA 6300 Reboot Procedures]]


== Related Tools ==
*[[Media:GCA-6300-Training-Manual.pdf|Training Manual]]
* [[Stepper 2 (AutoStep 200)|Stepper 2 (GCA Autostep 200)]] - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.
*[[Media: GCA-6300- Resist Data.pdf| Resist Data]]

Latest revision as of 19:32, 26 October 2024

Stepper 1 (GCA 6300)
Stepper1.jpg
Location Bay 7
Tool Type Lithography
Manufacturer GCA
Description GCA 6300 I-Line Wafer Stepper

Primary Supervisor Biljana Stamenic
(805) 893-4002
biljana@ece.ucsb.edu

Secondary Supervisor

Bill Millerski


Recipes

SignupMonkey: Sign up for this tool


About

Our GCA wafer stepper is an i-line (365 nm) step and repeat exposure tool for doing lithography that requires high resolution and/or critical alignment. The system has been modified to accept piece parts (down to ~15 mm x 15 mm) up to 6” diameter wafers using manual wafer loading. The maximum square die size is 14.8mm x 14.8mm. The system has an Olympus 2142 (N.A. = 0.42) lens that reduces the mask image by 5 x and gives an ultimate resolution of ~ 0.5 um in the center of the lens field. The system can easily produce 0.7 um isolated lines across the entire field. Autofocus is used to determine the sample surface relative to the lens, making the focus stable and repeatable for different thickness of wafer. The stages are controlled by stepper motors and laser interferometers. Using the global, manual alignment, better than 0.25 um alignment error is achievable. Using the DFAS local alignment system, alignment error better than 0.15 um is achieved. With the 350 W Hg arc lamp, we get approximately 180 mW/cm² of i-line intensity at the wafer.

The system is computer controlled with the capability to program and save a wide variety of exposure jobs. We also have unlimited phone support for system problems through a service contract. The laboratory contains a variety of i-line compatible photoresists. SPR955CM-0.9 for 0.7-1.0 um thick positive processes. AZ5214E for 1.0-2.0 um thick image reversal (negative) process. SPR955CM-1.8 for 1.5-2.0 um thick positive processes. SPR220-3 for 2.5-5 um thick positive process. SPR220-7 for > 5 um thick positive processes. AZnLOF5510 for 1.0um and AZnLOF 2020 for 1.5-3 um negative resist process. Shipley LOL-2000 is also used as an underlayer for high resolution lift-off processes.

Tutorial: If you are not familiar with the differences between Contact Litho and Stepper Litho, please review this short tutorial: Demis D. John - Stepper_Reticle_Layout_vs_Wafer_Layout.pdf

Detailed Specifications

  • Lens: Olympus 2142: NA = 0.42; Depth of field = 1.2 um for 0.7 um process
  • Maximum die size: ~15 mm x 15 mm
  • Resolution: 500 nm over portion of field; 700 nm over entire field
  • Registration tolerance: Max 0.30 um global alignment; Max 0.15 um local alignment (with care, you can achieve < 0.10 um registration)
  • Minimum substrate size: ~ 10 x 10 mm
  • Computer programmable recipes saved on hard disk
  • Mask Plates: 5x5x0.090 inches, 5x reduction, typically Soda Lime Glass (Quartz is also acceptable), no pellicle.

Process Information

CAD Files

Service Provider

Operating Procedures

Recipes

To calibrate your own Litho processes, you will need to:

Litho. recipes for all our photolith. tools can be found on the Photolithography Recipes page.

Staff Procedures

These procedures are for Staff use - contact staff if you think you need to run these!

Related Tools

  • Stepper 2 (GCA Autostep 200) - similar tool, compatible photomasks, but with automatic photomask alignment and "DFAS" automated local alignment. Can shoot multiple mask plates in single session.