Vacuum Deposition Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(changing thermal evaps to be correct)
(Added AuSn to Thermal evap 2)
 
Line 163: Line 163:
|[[Thermal Evaporation Recipes#Thermal Evaporator 1|R1]]
|[[Thermal Evaporation Recipes#Thermal Evaporator 1|R1]]
|
|
|
|
|
|
|
|-
!AuSn
|
|
|
|
|
|
|
|
|
|[[Thermal Evaporation Recipes#Thermal Evaporator 1|R1]]
|
|
|
|

Latest revision as of 21:57, 7 November 2024

Process Control Data

See linked page for process control data (calibration data over time, such as dep. rate, refractive index, stress etc.) over time, for a selection of highly used tools/films.

Deposition Tools/Materials Table

The Key/Legend for this table's A...R6 values is at the bottom of the page.

Vacuum Deposition Recipes

E-Beam Evaporation Sputtering Thermal Evaporation Plasma Enhanced Chemical
Vapor Deposition (PECVD)
Atomic Layer Deposition Molecular Vapor Deposition
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 3
(AJA ATC 2000-F)
Sputter 4
(AJA ATC 2200-V)
Sputter 5 (AJA ATC 2200-V) Ion Beam
Deposition (Veeco Nexus)
Thermal
Evap 1
Thermal Evap 2 (Solder) PECVD 1
(PlasmaTherm 790)
PECVD 2
(Advanced Vacuum)
Unaxis VLR ICP-PECVD Atomic Layer Deposition (Oxford FlexAL) Molecular Vapor Deposition (Tool)
Ag R2
R2 R2 R1 R1

R1 R1




AgBr
AgCl
Al R2
R2 R2 R1 R3 R1 R1 R3 R1




Al2O3 R2

R3 R3 R1 R5




R4
As
AuPd R1
AuZn R1
AuSn R1
AuGe R1
AlN



R1 R1
R1




R4
Au R2
R2 R2 R1 R3

R3 R2




B













Be
C R3
Cd
CdS
CdTe
CaF2 R2
CeO2
R3












Co R2

R2 R3


R1 R1




Cr R1

R2 R3
R3
R3 R2




Cu R1


R3 R2

R2 R1




Fe R2

R2 R3


R1 R1




Ga
GaAs
Ge R2
R2 R2 R1 R1







GeO2 R2
Gd R2

R1










Hf R1


R1











HfO2



R1 R1






R4
Hg
In








R3




InSb
Ir R1

R1








ITO
R3

R1 R1
R1






KCl
LiF
Mg R1 R1
MgF2 R1 R1 R1
MgO R2
Mn
MnS
Mo R2


R3 R1






Na
NaCl
Nb R2



R3






NbO5
Nd



R1






Ni R2
R2 R2 R3


R3 R2




NiCr R2 R2 R3
NiFe R1 R2 R1 R3
Pb
PbS
Pd R2
R2 R2



R3 R1




Pt R2
R2 R2 R3 R3 R3




R4
Ru R2

R2
R3






R4
Sb
Se
Si
R2

R3 R1
R1

R3

SiN



R3 R1
R6

R6 R6 R6

SiN - Low Stress R4 R6 R6
SiO2 R2 R2

R3 R1 R2 R6
R6 R6 R6 R4
SiOx R1
SiO R1 R1
SiOxNy






R3

R4



Sn








R2




SrF2
R2





R1





Ta R1


R3 R1
R1





Ta2O5
R1
R1


R6





Ti R2
R2 R2 R3 R3 R3 R1





TiN




R3
R1




R4
TiW R1


R2 R3








TiO
TiO2
R2

R1 R3
R5



R4
V



R1 R1







W R2


R2 R3







WC
Zn







R3 R2




ZnO










R3
ZnS
Zr R2

R2 R1 R1


R1




ZrO2











R4
Material E-Beam 1 (Sharon) E-Beam 2 (Custom) E-Beam 3 (Temescal) E-Beam 4 (CHA) Sputter 3
(ATC 2000-F)
Sputter 4
(ATC 2200-V)
Sputter 5 (ATC 2200-V) Ion Beam
Deposition (Veeco Nexus)
Thermal
Evap 1
Thermal Evap 2 (Solder) PECVD 1
(PlasmaTherm 790)
PECVD 2
(Advanced Vacuum)
Unaxis VLR ICP-PECVD Atomic Layer Deposition (Oxford FlexAl) Molecular Vapor Deposition (Tool)

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been ran at least once
R2 Process has been ran and/or procedure is documented or/and data available
R3 Process has been ran, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-Situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-Situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts/limits available