Difference between revisions of "Sputtering Recipes"
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*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015] |
*[https://docs.google.com/spreadsheets/d/12SKWvqxDuyTgWL44wfvrA2gKDy6ihV2XWh6WJsTT9hE/edit#gid=sharing SiO<sub>2</sub> Thickness uniformity-1hr depositions 2015] |
||
+ | *SiO2 1hr depositions: |
||
− | * |
+ | *Dep.rate: ≈ 5.44 nm/min (users must calibrate this prior to critical deps) |
− | *HF e.r.~ |
+ | *HF e.r.~360nm/min |
− | *Stress ≈ - |
+ | *Stress ≈ -370MPa (compressive) |
− | *Refractive Index: ≈ 1. |
+ | *Refractive Index: ≈ 1.492 |
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): |
*[[http://en.wikipedia.org/wiki/Cauchy's_equation Cauchy Parameters]] (350-2000nm): |
||
** A = 1.480 |
** A = 1.480 |
Revision as of 15:05, 9 June 2015
Back to Vacuum Deposition Recipes.
Sputter 1 (Custom)
Sputter 2 (SFI Endeavor)
Al Deposition (Sputter 2)
AlNx Deposition (Sputter 2)
Au Deposition (Sputter 2)
TiO2 Deposition (Sputter 2)
Sputter 3 (AJA ATC 2000-F)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 3 | 25-9 | 3.68 | - | - | 1.447 | - | yes | Brian |
SiO2 | 3 | 250 | 10 | 20 | 25 | 0 | 2.5 | 25-9 | 4.3 | - | - | 1.485 | - | yes | Brian |
SiO2 | 3 | 200 | 10 | 20 | 25 | 0 | 5 | 45-3 | 2.60 | - | - | 1.471 | - | yes | Brian |
SiN | 3 | 200 | 10 | 20 | 25 | 3 | 0 | 25-9 | 1.56 | - | - | 1.992 | - | yes | Brian |
SiN | 3 | 250 | 10 | 20 | 25 | 2.5 | 0 | 25-9 | 2.1 | - | - | 2.06 | - | yes | Brian |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.23 | - | - | - | - | yes | Ning |
Ni | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 25-9 | 1.82 | - | - | - | - | yes | Ning |
Ni | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 2.50 | - | - | - | - | yes | Ning |
Ta | 5 | 150 | 0 | 20 | 25 | 0 | 0 | 44-4 | 9.47 | - | - | - | - | yes | Ning |
Ta | 5 | 75 | 0 | 20 | 25 | 0 | 0 | 44-4 | 5.03 | - | - | - | - | yes | Ning |
SampleClean-NativeSiO2 | 10 | 0 | 18 | 20 | 25 | 0 | 0 | 44-4 | - | - | - | - | - | yes | 150Volts 5 min |
Ni and Ta Deposition (Sputter 3)
SiO2 Deposition (Sputter 3)
SiN Deposition (Sputter 3)
Sputter 4 (AJA ATC 2200-V)
The recipes below are given as starting points from data obtained in the nanofab. For critical depositions, calibrations are recommended.
Material | P(mT) | Pow(W) | Sub(W) | T(C) | Ar | N2 | O2 | Height-Tilt | Rate(nm/min) | Stress(MPa) | Rs(uOhm-cm) | n@633nm | k@633nm | Data Below | Comment |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
W | 3 | 300 | 0 | 50 | 45 | 0 | 0 | H2.75-T5 | 11.5 | -150 to 150 | 11 | - | - | Yes | Jeremy Watcher |
TiW | 4.5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 4.36 | - | - | - | - | No(AFM:available) | Ning Cao |
TiW | 4.5 | 300 | 0 | 75 | 45 | 0 | 0 | H2.75-T5 | 9.5 | -150 to 150 | 60 | - | - | Yes | 10%Ti by Wt |
TiN | 4 | 250 | 0 | 250 | 20 | 10 | 0 | H2.00-T7 | 1.9 | - | - | - | - | No | |
Nb | 4 | 250 | 0 | 20 | 30 | 0 | 0 | H2.00-T7 | 7.5 | - | - | - | - | No | |
Ti | 10 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 2.3 | - | - | - | - | Yes | Ning Cao |
Au | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H1-T10 | 17.7 | - | - | - | - | No(AFM:available) | Ning Cao |
Au | 10 | 300 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 45.4 | - | - | - | - | Yes | Ning Cao |
Al | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 4.4 | - | - | - | - | No(SEM:available | Ning Cao |
Pt | 5 | 200 | 0 | 20 | 45 | 0 | 0 | H2.75-T5 | 7.32 | - | - | - | - | No(AFM:available) | Ning Cao |
W-TiW Deposition (Sputter 4)
Ti-Au Deposition (Sputter 4)
Sputter 5 (Lesker AXXIS)
Ion Beam Deposition (Veeco NEXUS)
- IBD Calibrations Spreadsheet - Records of historical film depositions (rates, indices), Uniformity etc.
- Particulates in SiO2 and Ta2O5 in 2015
All users are required to enter their calibration deps (simple test deps only)
SiO2 deposition (IBD)
- SiO2 Standard Recipe
- SiO2 Data December 2014
- SiO2 Data-15min depositions 2015
- SiO2 Data-1hr depositions 2015
- SiO2 Thickness uniformity 2014
- SiO2 Thickness uniformity-15 min depositions 2015
- SiO2 Thickness uniformity-1hr depositions 2015
- SiO2 1hr depositions:
- Dep.rate: ≈ 5.44 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~360nm/min
- Stress ≈ -370MPa (compressive)
- Refractive Index: ≈ 1.492
- [Cauchy Parameters] (350-2000nm):
- A = 1.480
- B = 0.00498
- C = -3.2606e-5
Si3N4 deposition (IBD)
- Deposition Rate: ≈ 4.10 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~11nm/min
- Stress ≈ -1590MPa (compressive)
- Refractive Index: ≈ 1.969
- [Cauchy Parameters] (350-2000nm):
- A = 2.000
- B = 0.01974
- C = 1.2478e-4
Ta2O5 deposition (IBD)
- Ta2O5 Standard Recipe
- Ta2O5 Data December 2014
- Ta2O5 Data December 2015
- Ta2O5 Thickness uniformity 2014
- Ta2O5 Thickness uniformity 2015
- Deposition Rate: ≈ 8.00 nm/min (users must calibrate this prior to critical deps)
- HF e.r.~1 nm/min
- Stress ≈ -252MPa (compressive)
- Refractive Index: ≈ 2.171
- [Cauchy Parameters] (350-2000nm):
- A = 2.1123
- B = 0.018901
- C = -0.016222
TiO2 deposition (IBD)
- Deposition Rate: ≈ 1.29 nm/min (users must calibrate this prior to critical deps)
- HF etch rate ~5.34nm/min
- Stress ≈ -445MPa (compressive)
- Refractive Index: ≈ 2.259
- [Cauchy Parameters] (350-2000nm):
- A = 2.435
- B = -4.9045e-4
- C = 0.01309
- Absorbing < ~350nm